知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

29 records (took 0.016 seconds)

    Method for fabricating an NMOS transistor
    21.
    发明授权
    Method for fabricating an NMOS transistor 有权
    制造NMOS晶体管的方法

    公开(公告)号：US07550336B2

    公开(公告)日：2009-06-23

    申请号：US11562402

    申请日：2006-11-21

    Applicant: Tsai-Fu Hsiao ,  Po-Yuan Chen ,  Jung-Chin Chen

    Inventor： Tsai-Fu Hsiao ,  Po-Yuan Chen ,  Jung-Chin Chen

    IPC: H01L21/8238 ,  H01L21/36 ,  H01L21/20

    CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/6659

    Abstract: A method for fabricating an NMOS transistor is disclosed. First, a substrate having a gate structure thereon is provided. A carbon implantation process is performed thereafter by implanting carbon atoms into the substrate for forming a silicon carbide region in the substrate. Subsequently, a source/drain region is formed surrounding the gate structure. By conducting a carbon implantation process into the substrate and a corresponding amorphorized implantation process before or after the carbon implantation process is completed, the present invention eliminates the need of forming a recess for accommodating an epitaxial layer composed of silicon carbide while facilitates the formation of silicon carbide from the combination of both implantation processes.

    Abstract translation: 公开了一种用于制造NMOS晶体管的方法。 首先，提供其上具有栅极结构的衬底。 此后，通过将碳原子注入到用于在基板中形成碳化硅区域的基板中进行碳注入工艺。 随后，围绕栅极结构形成源/漏区。 通过在碳注入工艺完成之前或之后对基片进行碳注入工艺和相应的无定形注入工艺，本发明消除了形成用于容纳由碳化硅构成的外延层的凹槽的需要，同时有助于形成硅 两种植入工艺相结合的碳化物。

    METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
    24.
    发明申请
    METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
    制备金属氧化物半导体晶体管的方法

    公开(公告)号：US20070196990A1

    公开(公告)日：2007-08-23

    申请号：US11675091

    申请日：2007-02-15

    Applicant: Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    Inventor： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    IPC: H01L21/336

    CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/6659

    Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source/drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source/drain region.

    Abstract translation: 公开了一种制造金属氧化物半导体晶体管的方法。 首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。 执行离子注入工艺以将包含硼的分子簇注入围绕间隔物的半导体衬底中，以形成源/漏区。 分子簇内各硼原子的重量比优选小于10％。 此后，执行毫秒退火处理以激活源极/漏极区域内的分子簇。

    SALICIDE PROCESS UTILIZING A CLUSTER ION IMPLANTATION PROCESS
    25.
    发明申请
    SALICIDE PROCESS UTILIZING A CLUSTER ION IMPLANTATION PROCESS 有权
    利用聚集体植入过程的浸渍过程

    公开(公告)号：US20070037373A1

    公开(公告)日：2007-02-15

    申请号：US11463012

    申请日：2006-08-08

    Applicant: Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    Inventor： Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    IPC: H01L21/4763

    CPC classification number: H01L21/28518 ,  H01L21/26506 ,  H01L21/28052 ,  H01L29/665 ,  H01L29/6656

    Abstract: A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.

    Abstract translation: 自对准硅化物工艺包括提供包括至少预定的自对准硅化物区域的硅衬底，进行聚簇离子注入工艺以在硅衬底的预定自对准硅化物区域中形成非晶化层，在非晶化层的表面上形成金属层 并使金属层与非晶化层反应，以在硅衬底的表面上形成硅化物层。

    Method of forming a MOS transistor
    28.
    发明申请
    Method of forming a MOS transistor 审中-公开
    形成MOS晶体管的方法

    公开(公告)号：US20080258178A1

    公开(公告)日：2008-10-23

    申请号：US12127787

    申请日：2008-05-27

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L29/93 ,  H01L21/8238

    CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO2, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of to 1000.

    Abstract translation: 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自CO，CO 2 CO 2，C x H y ＆lt; / SUB＆gt;＆lt; SUP＆gt; +＆lt; / SUP＆gt;和（C＆lt; x＆lt; H＆gt; 其中，x为1〜10的数，y为4〜20的数，n为1000的数。

    Method of forming a MOS transistor
    29.
    发明申请
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US20070238234A1

    公开(公告)日：2007-10-11

    申请号：US11278434

    申请日：2006-04-03

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L21/8234 ,  H01L29/76

    CPC classification number: H01L21/2658 ,  H01L21/26506 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

    Abstract translation: 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，C H，H，O，O， SUP＆gt;和（C x H x H y）其中x是1至10的数 y为4〜20的数，n为1〜1000的数。

Patent Agency Ranking