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    SALICIDE PROCESS UTILIZING A CLUSTER ION IMPLANTATION PROCESS
    1.
    发明申请
    SALICIDE PROCESS UTILIZING A CLUSTER ION IMPLANTATION PROCESS 有权
    利用聚集体植入过程的浸渍过程

    公开(公告)号：US20070037373A1

    公开(公告)日：2007-02-15

    申请号：US11463012

    申请日：2006-08-08

    Applicant: Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    Inventor： Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    IPC: H01L21/4763

    CPC classification number: H01L21/28518 ,  H01L21/26506 ,  H01L21/28052 ,  H01L29/665 ,  H01L29/6656

    Abstract: A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.

    Abstract translation: 自对准硅化物工艺包括提供包括至少预定的自对准硅化物区域的硅衬底，进行聚簇离子注入工艺以在硅衬底的预定自对准硅化物区域中形成非晶化层，在非晶化层的表面上形成金属层 并使金属层与非晶化层反应，以在硅衬底的表面上形成硅化物层。

    Salicide process utilizing a cluster ion implantation process
    2.
    发明授权
    Salicide process utilizing a cluster ion implantation process 有权
    利用簇离子注入工艺的自杀过程

    公开(公告)号：US07553763B2

    公开(公告)日：2009-06-30

    申请号：US11463012

    申请日：2006-08-08

    Applicant: Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    Inventor： Tsai-Fu Hsiao ,  Chin-Cheng Chien ,  Kuo-Tai Huang

    IPC: H01L21/20

    CPC classification number: H01L21/28518 ,  H01L21/26506 ,  H01L21/28052 ,  H01L29/665 ,  H01L29/6656

    Abstract: A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.

    Abstract translation: 自对准硅化物工艺包括提供包括至少预定的自对准硅化物区域的硅衬底，进行聚簇离子注入工艺以在硅衬底的预定自对准硅化物区域中形成非晶化层，在非晶化层的表面上形成金属层 并使金属层与非晶化层反应，以在硅衬底的表面上形成硅化物层。

    Method of forming a MOS transistor
    5.
    发明申请
    Method of forming a MOS transistor 审中-公开
    形成MOS晶体管的方法

    公开(公告)号：US20080258178A1

    公开(公告)日：2008-10-23

    申请号：US12127787

    申请日：2008-05-27

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L29/93 ,  H01L21/8238

    CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO2, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of to 1000.

    Abstract translation: 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自CO，CO 2 CO 2，C x H y ＆lt; / SUB＆gt;＆lt; SUP＆gt; +＆lt; / SUP＆gt;和（C＆lt; x＆lt; H＆gt; 其中，x为1〜10的数，y为4〜20的数，n为1000的数。

    Method of forming a MOS transistor
    6.
    发明申请
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US20070238234A1

    公开(公告)日：2007-10-11

    申请号：US11278434

    申请日：2006-04-03

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L21/8234 ,  H01L29/76

    CPC classification number: H01L21/2658 ,  H01L21/26506 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

    Abstract translation: 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，C H，H，O，O， SUP＆gt;和（C x H x H y）其中x是1至10的数 y为4〜20的数，n为1〜1000的数。

    Method of forming a MOS transistor
    7.
    发明授权
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US07795101B2

    公开(公告)日：2010-09-14

    申请号：US12701612

    申请日：2010-02-08

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L21/336

    CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.

    Abstract translation: 一种形成MOS晶体管的方法，其中进行共同注入以将碳共注入物注入到源极区域和漏极区域或晕圈注入区域中，以有效地防止掺杂剂在源区域中过度扩散，并且 漏极区域或晕圈注入区域，以获得良好的连接曲线并改善短沟道效应，并且碳共植入物来自包含CO或CO 2的前体。

    Method of forming a MOS transistor
    8.
    发明授权
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US07396717B2

    公开(公告)日：2008-07-08

    申请号：US11278434

    申请日：2006-04-03

    Applicant: Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    Inventor： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC: H01L21/8238

    CPC classification number: H01L21/2658 ,  H01L21/26506 ,  H01L29/6659

    Abstract: A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

    Abstract translation: 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，Chd x H y O，O +和/或C（C 其中x为1〜10的数，y为4〜4的数，n为0〜 20，n为1〜1000的数。

    Method for fabricating metal-oxide semiconductor transistors
    9.
    发明授权
    Method for fabricating metal-oxide semiconductor transistors 有权
    金属氧化物半导体晶体管的制造方法

    公开(公告)号：US08053847B2

    公开(公告)日：2011-11-08

    申请号：US12324896

    申请日：2008-11-28

    Applicant: Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    Inventor： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    IPC: H01L21/02

    CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/6659

    Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.

    Abstract translation: 公开了一种制造金属氧化物半导体晶体管的方法。 首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。 进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。 分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

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