公开(公告)号：US20220068587A1

公开(公告)日：2022-03-03

申请号：US17418749

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Yan REN

IPC: H01J37/05 ,  H01J37/28

Abstract: Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.

公开(公告)号：US20210366685A1

公开(公告)日：2021-11-25

申请号：US16967989

申请日：2018-12-18

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiyuki YOKOSUKA ,  Hajime KAWANO ,  Kouichi KUROSAWA ,  Hideyuki KAZUMI

IPC: H01J37/22 ,  H01J37/05 ,  H01J37/28

Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

公开(公告)号：US11145486B2

公开(公告)日：2021-10-12

申请号：US16911518

申请日：2020-06-25

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Yutaka Inouchi

IPC: H01J37/244 ,  H01J37/05 ,  H01J37/10

Abstract: A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.

公开(公告)号：US11133147B2

公开(公告)日：2021-09-28

申请号：US16645511

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Toshiyuki Yokosuka ,  Hajime Kawano ,  Kouichi Kurosawa ,  Hideyuki Kazumi ,  Chahn Lee

IPC: H01J37/05 ,  H01J37/28 ,  H01J37/22 ,  H01J37/244

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

公开(公告)号：US11107657B2

公开(公告)日：2021-08-31

申请号：US16866482

申请日：2020-05-04

Applicant: ASML Netherlands B.V.

Inventor： Weiming Ren ,  Shuai Li ,  Xuedong Liu ,  Zhongwei Chen

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/05 ,  H01J37/063 ,  H01J37/304 ,  H01J29/51 ,  H01J37/12

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

公开(公告)号：US11049686B2

公开(公告)日：2021-06-29

申请号：US16693612

申请日：2019-11-25

Applicant: Carl Zeiss MultiSEM GmbH

Inventor： Dirk Zeidler ,  Stefan Schubert

IPC: H01J37/10 ,  H01J37/244 ,  H01J37/28 ,  H01J37/29 ,  H01J37/05

Abstract: A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

公开(公告)号：US11048162B2

公开(公告)日：2021-06-29

申请号：US16564743

申请日：2019-09-09

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: G03F1/80 ,  H05H3/02 ,  H01J37/317 ,  H01L21/02 ,  H01L21/265 ,  H01L21/311 ,  H01J37/05 ,  H01J37/147 ,  G03F1/82 ,  H01L29/36 ,  B24B37/04

Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

公开(公告)号：US11011348B2

公开(公告)日：2021-05-18

申请号：US16474499

申请日：2017-01-17

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Daisuke Bizen ,  Natsuki Tsuno ,  Takafumi Miwa ,  Makoto Sakakibara ,  Toshiyuki Yokosuka ,  Hideyuki Kazumi

IPC: H01J37/244 ,  H01J37/04 ,  H01J37/05 ,  H01J37/09 ,  H01J37/10 ,  H01J37/20 ,  H01J37/28

Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron source 201 that emits a primary electron, a sample stage 213 on which a sample is placed, a deflector 207 that causes the sample to be scanned with the primary electron, an objective lens 203 that focuses the primary electron on the sample, and a detector 206 that detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.

公开(公告)号：US11011342B2

公开(公告)日：2021-05-18

申请号：US16435744

申请日：2019-06-10

Applicant: Ebara Corporation

Inventor： Takeshi Murakami

IPC: H01J37/05 ,  H01J37/28 ,  H01J37/10 ,  H01J37/147 ,  H01J37/244 ,  G01R31/305

Abstract: In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

公开(公告)号：US10971324B2

公开(公告)日：2021-04-06

申请号：US15909482

申请日：2018-03-01

Applicant: Exogenesis Corporation

Inventor： Joseph Khoury ,  Sean R. Kirkpatrick ,  Michael J. Walsh ,  James G. Bachand ,  Allen R. Kirkpatrick

IPC: H01J37/05 ,  H05H3/02 ,  H01J37/317 ,  H01J37/147 ,  H05H5/04

Abstract: A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.