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    SOLID-STATE IMAGING ELEMENT
    11.
    发明公开
    SOLID-STATE IMAGING ELEMENT 审中-公开

    公开(公告)号：US20240237373A1

    公开(公告)日：2024-07-11

    申请号：US18289172

    申请日：2022-04-27

    申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Michinori SHIOMI ,  Syuuiti TAKIZAWA ,  Yuta OKABE ,  Osamu ENOKI ,  Yosuke SAITO

    IPC分类号： H10K39/32

    CPC分类号： H10K39/32

    摘要： A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer including first semiconductor nanoparticles; and a buffer layer including second semiconductor nanoparticles. A p-n junction surface is formed at an interface between the photoelectric conversion layer and the buffer layer. A product of a carrier concentration and a film thickness of the buffer layer is larger than a product of a carrier concentration of the photoelectric conversion layer and a diffusion length of a minority carrier, and a thickness of a depletion region formed in the photoelectric conversion layer is maximized.

    Image sensors and electronic devices
    12.
    发明授权
    Image sensors and electronic devices 有权

    公开(公告)号：US12035548B2

    公开(公告)日：2024-07-09

    申请号：US17232658

    申请日：2021-04-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Gae Hwang Lee ,  Dong-Seok Leem ,  Kwang Hee Lee ,  Sung Young Yun ,  Yong Wan Jin

    IPC分类号： H01L27/14 ,  G02B5/20 ,  H01L27/146 ,  H10K30/80 ,  H10K39/32 ,  H10K85/20

    CPC分类号： H10K39/32 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14649 ,  H01L27/14667 ,  H10K30/80 ,  H10K85/211 ,  H10K85/215

    摘要： An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    DETECTION DEVICE
    15.
    发明公开
    DETECTION DEVICE 审中-公开

    公开(公告)号：US20240206201A1

    公开(公告)日：2024-06-20

    申请号：US18544861

    申请日：2023-12-19

    申请人： Japan Display Inc.

    发明人： Keiichi SAITO

    IPC分类号： H10K39/32 ,  G06V10/141 ,  G06V40/13

    CPC分类号： H10K39/32 ,  G06V10/141 ,  G06V40/1318

    摘要： According to an aspect, a detection device includes: a plurality of organic photodiodes arranged in a detection area; a plurality of capacitive elements each coupled in parallel to a corresponding organic photodiode of the organic photodiodes; an analog front-end (AFE) circuit configured to read an electric charge amount stored in each of the capacitive elements to acquire a detection value of each of the organic photodiodes; a power supply circuit configured to supply a power supply potential to collectively apply a reverse bias to the organic photodiodes; and a control circuit configured to control the power supply potential. The organic photodiodes each includes: an active layer; an upper electrode provided with an upper buffer layer interposed between the upper electrode and the active layer; and a lower electrode provided with a lower buffer layer interposed between the lower electrode and the active layer.

    Imaging device, stacked imaging device, and solid-state imaging apparatus
    17.
    发明授权
    Imaging device, stacked imaging device, and solid-state imaging apparatus 有权

    公开(公告)号：US11985838B2

    公开(公告)日：2024-05-14

    申请号：US17964108

    申请日：2022-10-12

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Masahiro Joei ,  Kenichi Murata

    IPC分类号： H01L27/146 ,  H10K19/20 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32

    CPC分类号： H10K39/32 ,  H10K19/20 ,  H10K30/30 ,  H10K30/82 ,  H01L27/14647

    摘要： An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.