公开(公告)号：US5426717A

公开(公告)日：1995-06-20

申请号：US201911

申请日：1994-02-25

申请人： William Bindloss ,  Mark G. Roelofs

发明人： William Bindloss ,  Mark G. Roelofs

IPC分类号： G02B6/12 ,  G02B6/124 ,  G02F1/37 ,  G02F1/377 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  G02B6/10

CPC分类号： G02F1/3775 ,  G02B6/124 ,  H01S5/125 ,  H01S5/141 ,  H01S5/1218

摘要： A segmented article is disclosed which has selected Bragg reflection characteristics for a selected input wavelength. The article includes alternating sections of optical materials which are aligned and have refractive indexes different from adjacent sections to form at least one superperiod consisting of a plurality of segments such that each segment consists of a section of a first optical material and a section of a second optical material. At least one segment of the superperiod is different in optical path from another segment of the superperiod, and the interfaces between sections of the superperiod create backward travelling waves of complex amplitude at the selected input wavelength. The sequentially odd interfaces in the superperiod form a first set of interfaces and the sequentially even interfaces in the superperiod form a second set of interfaces. The article is characterized by (1) the sum for the superperiod sections of the product of the length of each section in the direction of alignment and the refractive index of the section being equal to about N.sub.z .lambda./2 where Nz is an integer and .lambda. is the wavelength of an input wave; and (2) the interfaces of the sequentially odd or even set of interfaces in the superperiod being spaced such that the modulus of the sum of the complex amplitudes created by that set is about zero or is less than 40 percent of the modulus of the sum of the complex amplitudes created by the other set. Devices are disclosed where the Bragg reflection from a Bragg reflector of this invention is used to stabilize a laser source.

摘要翻译： 公开了对所选择的输入波长选择布拉格反射特性的分段制品。 所述制品包括光学材料的交替部分，其对齐并且具有与相邻部分不同的折射率，以形成由多个片段组成的至少一个超周期，使得每个片段由第一光学材料的部分和第二光学材料的部分组成 光学材料。 超周期的至少一段与光纤中的超周期的其他部分的光路不同，超周期部分之间的接口在选定的输入波长处产生复振幅的反向行波。 超级周期中的顺序奇数接口形成第一组接口，并且超周期中的顺序偶数接口形成第二组接口。 该物品的特征在于（1）每个部分在取向方向上的长度和该部分的折射率等于大约Nzλ/ 2的乘积的超周期部分的和，其中Nz是整数和λ 是输入波的波长; 和（2）超周期中的顺序奇数或偶数组接口的接口间隔开，使得由该组创建的复振幅之和的模数大约为零或小于总和的模数的40％ 的另一组创建的复振幅。 公开了将本发明的布拉格反射器的布拉格反射用于稳定激光源的装置。

公开(公告)号：US20180366904A1

公开(公告)日：2018-12-20

申请号：US15571800

申请日：2016-05-06

申请人： STC.UNM

发明人： Steven R.J. Brueck ,  Sanjay Krishna ,  Daniel P. Dapkus

IPC分类号： H01S5/12 ,  H01S5/02 ,  H01S5/022 ,  H01S5/00 ,  H01S5/04 ,  H01S5/042 ,  H01S5/40

CPC分类号： H01S5/1218 ,  G01N2021/1704 ,  G01N2021/394 ,  G01N2021/399 ,  H01S3/1303 ,  H01S5/0085 ,  H01S5/021 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/0268 ,  H01S5/041 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/1212 ,  H01S5/34306 ,  H01S5/4087 ,  H01S5/50

摘要： A tunable laser device includes a laser structure and a plurality of individually addressable, separated contact stripes disposed on the laser structure. The laser structure includes a substrate, an active portion disposed on the substrate, and a chirped distributed feedback (DFB) grating disposed on the active portion. The active portion includes at least top and bottom contact layers and a gain medium.

公开(公告)号：US09385509B2

公开(公告)日：2016-07-05

申请号：US14725692

申请日：2015-05-29

申请人： Thorlabs Quantum Electronics, Inc.

发明人： Catherine Genevieve Caneau ,  Lawrence Charles Hughes, Jr. ,  Feng Xie ,  Chung-En Zah

IPC分类号： H01S3/10 ,  H01S5/34 ,  H01S5/028 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/10 ,  H01S5/40

CPC分类号： H01S5/0687 ,  B82Y20/00 ,  H01S3/1055 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1096 ,  H01S5/1218 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/3401 ,  H01S5/3402 ,  H01S5/4043 ,  H01S5/4087

摘要： A monolithic tunable mid-infrared laser has a wavelength range within the range of 3-14 μm and comprises a heterogeneous quantum cascade active region together with at least a first integrated grating. The heterogeneous quantum cascade active region comprises at least one stack, the stack comprising two, desirably at least three differing stages. Methods of operating and calibrating the laser are also disclosed.

摘要翻译： 单片可调谐中红外激光器的波长范围在3-14μm的范围内，并且包括非均质量子级联有源区以及至少第一集成光栅。 非均质量子级联有源区包括至少一个堆叠，堆叠包括两个，期望地至少三个不同的阶段。 还公开了操作和校准激光器的方法。

公开(公告)号：US09048624B2

公开(公告)日：2015-06-02

申请号：US14362435

申请日：2012-12-05

申请人： Kyoto University ,  HAMAMATSU PHOTONICS K.K.

发明人： Susumu Noda ,  Yoshitaka Kurosaka ,  Akiyoshi Watanabe ,  Kazuyoshi Hirose ,  Takahiro Sugiyama

IPC分类号： H01S3/00 ,  H01S5/10 ,  H01S5/40 ,  H01S5/062 ,  H01S5/12 ,  H01S5/323 ,  H01S5/042 ,  H01S5/343

CPC分类号： H01S5/105 ,  H01S5/0425 ,  H01S5/06243 ,  H01S5/1085 ,  H01S5/1218 ,  H01S5/323 ,  H01S5/34313 ,  H01S5/4056

摘要： According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (δθ) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (θ3) of the other laser beam is set to be less than 90 degrees.

摘要翻译： 根据第一和第二周期结构中的排列周期（a1和a2）的倒数之间的有限差，当在半导体激光元件的厚度方向上看时，至少两个激光束形成预定角度（δ' 在半导体激光元件中产生相对于第一驱动电极（E2）的长度方向的一个激光束，其中一个激光束被设定为在发光端面中被全反射，并且将折射角（＆ 其他激光束设定为小于90度。

公开(公告)号：US20130114635A1

公开(公告)日：2013-05-09

申请号：US13292385

申请日：2011-11-09

申请人： Dmitri Vladislavovich Kuksenkov ,  Shenping Li ,  Hong Ky Nguyen ,  Chung-En Zah

发明人： Dmitri Vladislavovich Kuksenkov ,  Shenping Li ,  Hong Ky Nguyen ,  Chung-En Zah

IPC分类号： H01S5/125

CPC分类号： H01S5/0612 ,  H01S5/0261 ,  H01S5/06256 ,  H01S5/1096 ,  H01S5/1209 ,  H01S5/1218 ,  H01S5/1234 ,  H01S5/125

摘要： A multi-wavelength distributed Bragg reflector (DBR) semiconductor laser is provided where DBR heating elements are positioned over the waveguide in the DBR section and define an interleaved temperature profile that generates multiple distinct reflection peaks corresponding to distinct temperature dependent Bragg wavelengths associated with the temperature profile. Neighboring pairs of heating elements of the DBR heating elements positioned over the waveguide in the DBR section are spaced along the direction of the axis of optical propagation by a distance that is equal to or greater than the laser chip thickness b to minimize the impact of thermal crosstalk between distinct temperature regions of the interleaved temperature profile.

摘要翻译： 提供了一种多波长分布布拉格反射器（DBR）半导体激光器，其中DBR加热元件位于DBR部分中的波导上方，并且限定了交错的温度分布，其产生对应于与温度相关的不同的温度相关布拉格波长的不同反射峰 个人资料 位于DBR部分的波导上的DBR加热元件的相邻的加热元件对沿着光学传播轴的方向间隔开等于或大于激光器芯片厚度b的距离，以最小化热的影响 交错温度曲线的不同温度区域之间的串扰。

公开(公告)号：US07082152B2

公开(公告)日：2006-07-25

申请号：US10375038

申请日：2003-02-28

申请人： Hiroshi Shimizu ,  Junji Yoshida ,  Naoki Tsukiji ,  Yutaka Ohki

发明人： Hiroshi Shimizu ,  Junji Yoshida ,  Naoki Tsukiji ,  Yutaka Ohki

IPC分类号： H01S3/08

CPC分类号： B82Y20/00 ,  H01S3/06725 ,  H01S3/094011 ,  H01S3/094069 ,  H01S3/094096 ,  H01S3/302 ,  H01S5/0042 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/1039 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/1209 ,  H01S5/1218 ,  H01S5/227 ,  H01S5/34306 ,  H01S2302/00

摘要： An n-Inp buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are laminated on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are provided to be adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer and the p-InP spacer layer. A p-InP cladding layer, a p-GaInAsP contact layer, and a p-side electrode are laminated on the p-InP spacer layer and the n-InP blocking layer, and an n-side electrode is arranged on a rear surface of the n-InP substrate. A diffraction grating that selects light having the number of oscillation longitudinal modes of not less than 10, more preferably not less than 18, oscillation longitudinal modes the difference values of which in optical intensity from the oscillation longitudinal mode having the highest optical intensity are not more than 10 dB, is arranged in the p-InP spacer layer.

摘要翻译： 在n-InP衬底上层叠n-Inp缓冲层，GRIN-SCH-MQW有源层和p-InP间隔层。 提供p-InP阻挡层和n-InP阻挡层以与n-InP缓冲层，GRIN-SCH-MQW有源层和p-InP间隔层的上部区域相邻。 p-InP包层，p-GaInAsP接触层和p侧电极层叠在p-InP间隔层和n-InP阻挡层上，并且n侧电极配置在 n-InP衬底。 选择振荡纵模数为10个以上，更优选为18以上的光的衍射光栅，其光强度的差值与具有最高光强度的振荡纵模不同的振荡纵模 在p-InP间隔层中排列10dB以上。

公开(公告)号：US06898228B2

公开(公告)日：2005-05-24

申请号：US10291513

申请日：2002-11-12

申请人： Satoshi Irino ,  Naoki Tsukiji ,  Junji Yoshida

发明人： Satoshi Irino ,  Naoki Tsukiji ,  Junji Yoshida

IPC分类号： G02F1/35 ,  G02B6/124 ,  H01S3/30 ,  H01S5/0683 ,  H01S5/125 ,  H01S5/227 ,  H01S5/50 ,  H01S5/00

CPC分类号： G02B6/124 ,  H01S3/06754 ,  H01S3/094011 ,  H01S3/09408 ,  H01S3/094096 ,  H01S3/1301 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/0287 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/1096 ,  H01S5/1209 ,  H01S5/1215 ,  H01S5/1218 ,  H01S5/125 ,  H01S5/227

摘要： A diffraction grating is provided in the vicinity of a GRIN-SCH-MQW active layer formed between a radiation side reflection coating provided on a radiation end face of a laser beam and a reflection coating provided on a reflection end face of the laser beam, and on the radiation side reflection coating side. An n-InP layer which covers the upper part of the diffraction grating is also provided, so that the current from the p-side electrode is prevented from being injected to the vicinity of the diffraction grating by the n-InP layer. An n-InPGaAsP diffusion prevention layer forms a non-current injection area so as to suppress alloying with the p-side electrode.

摘要翻译： 衍射光栅设置在形成在设置在激光束的辐射端面上的辐射侧反射涂层和设置在激光束的反射端面上的反射涂层之间的GRIN-SCH-MQW有源层附近，以及 在辐射侧反射涂层侧。 还提供了覆盖衍射光栅上部的n-InP层，从而防止来自p侧电极的电流被n-InP层注入到衍射光栅附近。 n-InPGaAsP扩散防止层形成非电流注入区域，以抑制与p侧电极的合金化。

公开(公告)号：US20050053101A1

公开(公告)日：2005-03-10

申请号：US10937212

申请日：2004-09-09

申请人： Jian Liu

发明人： Jian Liu

IPC分类号： H01S3/067 ,  H01S3/30

CPC分类号： H01S3/0675 ,  H01S3/06712 ,  H01S3/06791 ,  H01S3/08027 ,  H01S3/08036 ,  H01S3/1055 ,  H01S3/1312 ,  H01S3/1608 ,  H01S5/1218 ,  H01S5/146

摘要： A method for generating a laser projection by employing a laser gain medium for receiving an optical input projection from a laser pump. The method further includes a step of generating a laser of a resonant peak from a single mode selection filter.

摘要翻译： 一种通过采用激光增益介质从激光泵接收光输入投影来产生激光投射的方法。 该方法还包括从单模选择滤波器产生共振峰的激光的步骤。

公开(公告)号：US20050041699A1

公开(公告)日：2005-02-24

申请号：US10484418

申请日：2002-07-17

申请人： Ian White ,  Richard Penty ,  Adrian Wonfor

发明人： Ian White ,  Richard Penty ,  Adrian Wonfor

IPC分类号： H01S5/12 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/125 ,  H01S5/50 ,  H04B10/02 ,  H04B10/28 ,  H04J14/00 ,  H04J14/02 ,  H01S3/10 ,  H01S3/08

CPC分类号： H01S5/026 ,  H01S5/06256 ,  H01S5/1209 ,  H01S5/1218 ,  H01S5/50 ,  H01S5/5054 ,  H01S5/509

摘要： A WDM optical wavelength converter for converting modulated radiation at a first WDM wavelength channel (λ1) to corresponding modulated radiation at another WDM wavelength channel (λ2) comprises: a semiconductor laser (e.g., a sampled grating distributed Bragg reflector SGDBR device) integrated with a semiconductor optical amplifier (SOA). The converter is characterized in that the laser is wavelength tuneable over at least a plurality of wavelength channels and preferably all wavelength channels.

摘要翻译： 用于将第一WDM波长信道（λ1）处的调制辐射转换成另一个WDM波长信道（λ2）处的对应调制辐射的WDM光波长转换器包括：集成有一个半导体激光器（例如，采样的光栅分布式布拉格反射器SGDBR器件） 半导体光放大器（SOA）。 转换器的特征在于，激光器可以在至少多个波长信道上，优选地所有波长信道上进行波长调谐。

公开(公告)号：US20050030990A1

公开(公告)日：2005-02-10

申请号：US10493879

申请日：2002-03-18

申请人： Neal O'Gorman

发明人： Neal O'Gorman

IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/12 ,  H01S3/00 ,  H01S3/10

CPC分类号： H01S5/0014 ,  H01S5/0617 ,  H01S5/06256 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/1209 ,  H01S5/1218 ,  H01S5/1228

摘要： A method is described for qualifying a multisection semiconductor laser using measurements of excursions from stable operating conditions to neighbouring mode boundaries at which the laser undergoes mode-hopping. These excursions are measured when the laser is characterised to provide a measure of the stability and hence the quality of the laser, and to facilitate statisctical analysis of the quality of a batch of lasers from a given wafer. The values of the excursions may be re-measured during the life of the laser using a curtailed version of the characterising procedure rapidly to monitor aging or other deterioration of the laser.

摘要翻译： 描述了一种使用从稳定操作条件到相邻模式边界的偏移测量的多分割半导体激光器的限定方法，激光器在激光器进行模式跳变。 当激光器的特征在于提供激光器的稳定性和因此的质量的量度时，测量这些偏移，并且便于对来自给定晶片的一批激光器的质量进行统计分析。 可以在激光器的寿命期间重新测量偏移的值，其中使用特征化程序的限制版本快速地监测激光器的老化或其他劣化。