Abstract:
Disclosed are embodiments of an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. Additionally, apparatus kits are disclosed that enable the use of the same shields in the observation of prepared samples.
Abstract:
A shielding member for a charged particle beam apparatus includes a conductive substrate; and a through hole extending through the conductive substrate. The conductive substrate is comprised of a material having a specific electrical resistivity in a range from about 106 Ωcm to about 1012 Ωcm.
Abstract:
A lithography apparatus performs writing on a substrate with a plurality of charged particle beams and includes a blanking deflector array for blanking the plurality of charged particle beams; an aperture array configured to block a charged particle beam deflected by the blanking deflector array; and a sealing mechanism configured to seal an opening of at least one of the blanking deflector array and the aperture array with a shielding material that shields a charged particle beam.
Abstract:
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
Abstract:
A specimen holding device has a plurality of electrodes, and a moving mechanism for moving upward and downward a part of the plurality of electrodes. Further, the moving mechanism moves the part of the plurality of electrodes downward to evacuate from a path through which a specimen is introduced. Further, the specimen holding device has a positioning member for the specimen so that the specimen is positioned after being mounted.
Abstract:
Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
Abstract:
A method of reducing foreign material contamination of a substrate in an ion beam system and an ion beam system. The system, including: a vacuum chamber having an ion beam axis; a substrate chamber free to tilt about a tilt axis, the tilt axis orthogonal to and intersecting the ion beam axis; a flexible bellows connecting an opening in the substrate chamber and an opening in the vacuum chamber, both openings co-axially aligned with the ion beam axis, the bellows providing a vacuum seal between the substrate chamber and the vacuum chamber; and a hollow foreign material shield open at a top proximate to the vacuum chamber and a bottom proximate to the substrate chamber, the foreign material shield located between the ion beam axis and the flexible bellows, the top and bottom of the foreign material shield co-axially aligned with the ion beam axis.
Abstract:
A method of reducing foreign material contamination of a substrate in an ion beam system and an ion beam system. The system, including: a vacuum chamber having an ion beam axis; a substrate chamber free to tilt about a tilt axis, the tilt axis orthogonal to and intersecting the ion beam axis; a flexible bellows connecting an opening in the substrate chamber and an opening in the vacuum chamber, both openings co-axially aligned with the ion beam axis, the bellows providing a vacuum seal between the substrate chamber and the vacuum chamber; and a hollow foreign material shield open at a top proximate to the vacuum chamber and a bottom proximate to the substrate chamber, the foreign material shield located between the ion beam axis and the flexible bellows, the top and bottom of the foreign material shield co-axially aligned with the ion beam axis.
Abstract:
A magnetism preventive cylinder is provided at a focused ion beam irradiating lens barrel tip, and an electricity preventive cylinder is mounted at an electron beam irradiating lens barrel tip. Also, the magnetism preventive cylinder is provided at the electron beam irradiating lens barrel tip in place of electricity preventive cylinder. The magnetism preventive cylinder at the focused ion beam irradiating lens barrel tip prevents a focused ion beam from being affected by a magnetic field from a focused ion beam. The electricity preventive cylinder at the electron beam irradiating lens barrel tip prevents against a magnetic field from the electron beam irradiating lens barrel tip.
Abstract:
An electrically conductive, shielding mesh structure (320) is interposed between a scanning electron microscope (10) and a sample (110) being examined. This shield prevent electrical field (325) leakage from the microscope from reaching the sample (110) where it would otherwise interact with various sample compositions or structures unpredictably, causing uncertainty in the working and focal distances. The mesh (320) can be electrically biased and electrical field gradients can be introduced by applying different voltages to different wires (360, 510) in the mesh. Alternatively, the mesh (320) can operate magnetically and adjustable magnetic and electric fields and fields gradients can be utilized to maximize collection efficiency and minimize distortion of scanned image. The absence of the perturbing leakage field (325) at the sample enables the use of an optical autofocus system (630,640, 690, 700, 730, and 750), resulting in a high sample throughput rate. The components which comprise the autofocus system are symmetrically arranged to prevent astigmatic distortion of the electron beam. These components can be electrically biased, thus enhancing efficiency of the microscope's x-ray and electron detectors (170, 240, and 250).