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    Dielectric insulator separated substrate for semiconductor integrated circuits
    13.
    发明授权
    Dielectric insulator separated substrate for semiconductor integrated circuits 失效
    用于半导体集成电路的绝缘体绝缘体分离衬底

    公开(公告)号：US4173674A

    公开(公告)日：1979-11-06

    申请号：US888981

    申请日：1978-03-22

    Applicant: Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

    Inventor： Akio Mimura ,  Takaya Suzuki ,  Seturo Yagiyu

    IPC: H01L21/762 ,  B32B7/00 ,  B32B9/04 ,  H01L21/304 ,  H01L21/316

    CPC classification number: H01L21/76297 ,  Y10T428/265

    Abstract: A dielectric insulator separated substrate comprises a plurality of monocrystalline semiconductor island regions in which circuit elements are to be formed and a support region for supporting the island regions while a dielectric film formed on the supporting region electrically separates the island regions from each other. The supporting region comprises crystalline semiconductor layers and at least one oxygen diffusion preventive film laminated alternately.The extreme outer polycrystalline semiconductor layer of the supporting region is polished to such a thickness as to prevent the substrate from being curved greatly by the wedge action due to the oxygen diffusion. Since the extreme outer polycrystalline semiconductor layer thus polished has a flat surface, the handling of the substrate is easy. The substrate devoid of any curveness deformation assures a highly accurate formation of the circuit elements in the island regions.

    Abstract translation: 介质绝缘体分离衬底包括要形成电路元件的多个单晶半导体岛区域和用于支撑岛区的支撑区域，同时形成在支撑区域上的电介质膜将岛区彼此电分离。 支撑区域包括结晶半导体层和交替层压的至少一个氧扩散防止膜。 支撑区域的极外部多晶半导体层被抛光到这样的厚度，以防止由于氧扩散而产生的楔形作用使衬底大大弯曲。 由于这样抛光的极外部多晶半导体层具有平坦的表面，所以基板的处理容易。 没有任何弯曲变形的基板确保岛状区域中的电路元件的高精度地形成。

    Method of fabricating a semiconductor thin film
    19.
    发明授权
    Method of fabricating a semiconductor thin film 有权
    制造半导体薄膜的方法

    公开(公告)号：US07419860B2

    公开(公告)日：2008-09-02

    申请号：US10388638

    申请日：2003-03-17

    Applicant: Youmei Shinagawa ,  Akio Mimura ,  Genshiro Kawachi ,  Takeshi Satoh

    Inventor： Youmei Shinagawa ,  Akio Mimura ,  Genshiro Kawachi ,  Takeshi Satoh

    IPC: H01L21/20

    CPC classification number: H01L21/02675 ,  G02F1/13454 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1255 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03682 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

    Abstract: A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semiconductor film in the first layer; crystallizing the semiconductor film in the first layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light; forming a semiconductor film in a second layer having a film thickness thinner than that of the semiconductor film in the first layer; performing laser crystallization of the semiconductor thin film in the second layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light, are continuously performed without exposing the workpiece to the atmosphere.

    Abstract translation: 使用激光结晶技术在经济的玻璃基板上形成具有均匀表面和大晶粒尺寸的晶体半导体。 一系列工艺，包括在玻璃基板上形成绝缘膜; 在第一层中形成半导体膜; 通过从弱能激光逐步照射激光到强能激光，使第一层中的半导体膜结晶; 在第一层中形成薄膜厚度比半导体膜薄的第二层的半导体膜; 通过从弱能激光逐步照射激光到强能激光，在第二层中进行半导体薄膜的激光结晶，不会使工件暴露在大气中。

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