SEMICONDUCTOR DIE PACKAGE WITH CONDUCTIVE LINE CRACK PREVENTION DESIGN

    公开(公告)号:US20230016849A1

    公开(公告)日:2023-01-19

    申请号:US17377620

    申请日:2021-07-16

    IPC分类号: H01L23/498

    摘要: A semiconductor die package is provided. The semiconductor die package includes a semiconductor die and a package substrate disposed below the semiconductor die. The semiconductor die has a corner. The package substrate includes several conductive lines, and one of the conductive lines under the corner of the semiconductor die includes a first line segment and a second line segment. The first and second line segments are connected together, and the second line segment has a smaller line width than the first line segment. The first line segment is linear and extends in a first direction. The second line segment is non-linear and has a varying extension direction.

    SEMICONDUCTOR DIE PACKAGE WITH MULTI-LID STRUCTURES AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20220367314A1

    公开(公告)日:2022-11-17

    申请号:US17318163

    申请日:2021-05-12

    摘要: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

    SEMICONDUCTOR PACKAGE WITH STRESS REDUCTION DESIGN AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20220361338A1

    公开(公告)日:2022-11-10

    申请号:US17396253

    申请日:2021-08-06

    IPC分类号: H05K1/18 H05K3/28 H01L25/065

    摘要: A semiconductor package and a method of forming the same are provided. The semiconductor package includes a package substrate, a semiconductor device, an underfill element, and a groove. The semiconductor device is bonded to the surface of the package substrate through multiple electrical connectors. The underfill element is formed between the semiconductor device and the surface of the package substrate to surround and protect the electrical connectors. The underfill element includes a fillet portion that extends laterally beyond the periphery of the semiconductor device and is formed along the periphery of the semiconductor device. The groove is formed in the fillet portion and spaced apart from the periphery of the semiconductor device.