公开(公告)号：US20210074593A1

公开(公告)日：2021-03-11

申请号：US16562395

申请日：2019-09-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chandrashekhar Prakash SAVANT ,  Chia-Ming TSAI ,  Ming-Te CHEN ,  Tien-Wei YU

IPC: H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.

公开(公告)号：US20160043186A1

公开(公告)日：2016-02-11

申请号：US14455512

申请日：2014-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ke-Chih LIU ,  Chia-Ming TSAI ,  Shih-Chi LIN

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack positioned over the semiconductor substrate. The gate stack includes a gate dielectric layer and a gate electrode over the gate dielectric layer. The semiconductor device structure includes spacers positioned over first sidewalls of the gate stack. The spacers and the gate stack surround a recess. The semiconductor device structure includes an insulating layer formed over the semiconductor substrate and surrounding the gate stack. The semiconductor device structure includes a cap layer covering the insulating layer, the spacers, and inner walls of the recess.

Abstract translation: 提供半导体器件结构。 半导体器件结构包括半导体衬底。 半导体器件结构包括位于半导体衬底上的栅极堆叠。 栅极堆叠包括栅极电介质层和位于栅极电介质层上的栅电极。 半导体器件结构包括位于栅极堆叠的第一侧壁上方的间隔物。 间隔物和栅极堆叠围绕凹部。 半导体器件结构包括形成在半导体衬底上并围绕栅堆叠的绝缘层。 半导体器件结构包括覆盖绝缘层，间隔物和凹部的内壁的覆盖层。

公开(公告)号：US20230163187A1

公开(公告)日：2023-05-25

申请号：US18151575

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei WANG ,  Chia-Ming TSAI ,  Ke-Chih LIU ,  Chandrashekhar Prakash SAVANT ,  Tien-Wei YU

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/28 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L29/785 ,  H01L29/0649 ,  H01L21/823437 ,  H01L21/28088 ,  H01L27/0886 ,  H01L21/823431 ,  H01L29/66795

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

公开(公告)号：US20230122103A1

公开(公告)日：2023-04-20

申请号：US18053234

申请日：2022-11-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chandrashekhar Prakash SAVANT ,  Tien-Wei YU ,  Chia-Ming TSAI

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure describes method to form a semiconductor device with a diffusion barrier layer. The method includes forming a gate dielectric layer on a fin structure, forming a work function stack on the gate dielectric layer, reducing a carbon concentration in the work function stack, forming a barrier layer on the work function stack, and forming a metal layer over the barrier layer. The barrier layer blocks a diffusion of impurities into the work function stack, the gate dielectric layer, and the fin structure.

公开(公告)号：US20210376104A1

公开(公告)日：2021-12-02

申请号：US16888548

申请日：2020-05-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shahaji B. MORE ,  Chandrashekhar Prakash SAVANT ,  Tien-Wei YU ,  Chia-Ming TSAI

IPC: H01L29/49 ,  H01L29/423 ,  H01L27/092 ,  H01L21/28

Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.

公开(公告)号：US20210020756A1

公开(公告)日：2021-01-21

申请号：US17063177

申请日：2020-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei WANG ,  Chia-Ming TSAI ,  Ke-Chih LIU ,  Chandrashekhar Prakash SAVANT ,  Tien-Wei YU

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/28 ,  H01L27/088 ,  H01L29/66

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.