公开(公告)号：US10522412B2

公开(公告)日：2019-12-31

申请号：US15898919

申请日：2018-02-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Shuo Ho ,  Tsung-Yu Chiang ,  Chia-Ming Chang ,  Jyun-Ming Lin

IPC: H01L21/82 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/28 ,  H01L21/283 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/51

Abstract: Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.

公开(公告)号：US10347766B2

公开(公告)日：2019-07-09

申请号：US14475132

申请日：2014-09-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Shuo Ho ,  Chia-Ming Chang ,  Tsung-Yu Chiang ,  Kuang-Hsin Chen ,  Bor-Zen Tien

IPC: H01L21/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate generally to a semiconductor device and method of fabricating the same, the semiconductor device includes a semiconductor substrate and a gate stack disposed over a channel region of the semiconductor device, the gate stack includes an oxidation layer, a gate dielectric and a gate electrode, the oxidation layer at least covers a portion of the channel region of the semiconductor device and may act as a barrier to prevent damage to the underlying features, such as the source and drain regions, during removal of a dummy gate in a gate last process.

公开(公告)号：US10032873B2

公开(公告)日：2018-07-24

申请号：US15164824

申请日：2016-05-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/786 ,  H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US09899265B2

公开(公告)日：2018-02-20

申请号：US15383837

申请日：2016-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Shuo Ho ,  Tsung-Yu Chiang ,  Chia-Ming Chang ,  Jyun-Ming Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/28 ,  H01L21/283 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/51

CPC classification number: H01L21/823456 ,  H01L21/0273 ,  H01L21/28008 ,  H01L21/28123 ,  H01L21/283 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659

Abstract: Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.

公开(公告)号：US09257505B2

公开(公告)日：2016-02-09

申请号：US14273970

申请日：2014-05-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ying-Hua Lai ,  Chia-Ming Chang ,  Tsung-Yu Chiang ,  Kuang-Hsin Chen

IPC: H01L21/76 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H01L21/762 ,  H01L21/28 ,  H01L21/02 ,  H01L21/311 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/24

CPC classification number: H01L29/0653 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/28255 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823878 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/6681 ,  H01L29/7842 ,  H01L29/7851

Abstract: A semiconductor device includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device also includes a first epitaxial fin and a second epitaxial fin over the semiconductor substrate, and the first epitaxial fin and the second epitaxial fin protrude from the isolation structure. The semiconductor device further includes a gate stack over and traversing the first epitaxial fin and the second epitaxial fin. In addition, the semiconductor device includes a recess extending from a top surface of the isolation structure. The recess is between the first epitaxial fin and the second epitaxial fin.

Abstract translation: 半导体器件包括半导体衬底和半导体衬底上的隔离结构。 半导体器件还包括半导体衬底上的第一外延鳍和第二外延鳍，并且第一外延鳍和第二外延鳍从隔离结构突出。 半导体器件还包括在第一外延翅片和第二外延翅片之上并穿过第一外延翅片的栅叠层。 此外，半导体器件包括从隔离结构的顶表面延伸的凹部。 凹槽在第一外延翅片和第二外延翅片之间。