公开(公告)号：US20210098458A1

公开(公告)日：2021-04-01

申请号：US16805858

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Chun-Heng Chen ,  Ming-Ho Lin ,  Chi-On Chui

IPC: H01L27/092 ,  H01L21/8238 ,  H01L21/02

Abstract: Provided are a deposition method, a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate and a dielectric structure. The substrate includes at least one fin thereon. The dielectric structure covers the at least one fin. A thickness of the dielectric structure located on a top surface of the at least one fin is greater than a thickness of the dielectric structure located on a sidewall of the at least one fin. The dielectric structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer is conformally disposed on the at least one fin. The second dielectric layer is disposed on the first dielectric layer over the top surface of the at least one fin. A thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

公开(公告)号：US20240395912A1

公开(公告)日：2024-11-28

申请号：US18790218

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Chun-Heng Chen ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

公开(公告)号：US12046660B2

公开(公告)日：2024-07-23

申请号：US17813793

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L21/3213

CPC classification number: H01L29/66545 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/32134 ,  H01L21/32135

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US20240186190A1

公开(公告)日：2024-06-06

申请号：US18152557

申请日：2023-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Cheng-Wei Chang ,  Ting-Hsiang Chang ,  Chih-Tang Peng ,  Yung-Cheng Lu

IPC: H01L21/8238 ,  H01L21/762 ,  H01L27/092

CPC classification number: H01L21/823878 ,  H01L21/76224 ,  H01L21/823821 ,  H01L27/0924

Abstract: In an embodiment, a method includes: forming a first fin and a second fin over a semiconductor substrate; forming an isolation region between the first fin and the second fin, forming the isolation region comprising: depositing an oxide liner along the first fin, the second fin, and the semiconductor substrate, the oxide liner comprising a first upper portion and a first lower portion along the first fin, the first lower portion being between the first upper portion and the semiconductor substrate; thinning the oxide liner; depositing an insulation material over the oxide liner; and recessing the insulation material; and forming a gate structure over the first fin, the second fin, and the isolation region.

公开(公告)号：US20230360960A1

公开(公告)日：2023-11-09

申请号：US18351985

申请日：2023-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Bang-Tai Tang

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/0228 ,  H01L21/02348 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

公开(公告)号：US20250048703A1

公开(公告)日：2025-02-06

申请号：US18490363

申请日：2023-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yu Wei ,  Hao-Ming Tang ,  Cheng-I Lin ,  Shu-Han Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Semiconductor devices and methods of manufacture are presented. In embodiments a method of manufacturing the semiconductor device includes forming a fin from a plurality of semiconductor materials, depositing a dummy gate over the fin, depositing a plurality of spacers adjacent to the dummy gate, removing the dummy gate to form an opening adjacent to the plurality of spacers, widening the opening adjacent to a top surface of the plurality of spacers, after the widening, removing one of the plurality of semiconductor materials to form nanowires, and depositing a gate electrode around the nanowires.

公开(公告)号：US20230008994A1

公开(公告)日：2023-01-12

申请号：US17568926

申请日：2022-01-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Da-Yuan Lee ,  Chi On Chui

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: A method of forming a semiconductor device includes forming a first layer over a semiconductor fin and forming a second layer over the first layer. The first layer is a first material and the second layer is a second material different from the first layer. The second layer is thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The method further includes performing an oxidation process, the oxidation process oxidizing at least a portion of the second layer, and patterning the second layer and the first layer.

公开(公告)号：US20220384611A1

公开(公告)日：2022-12-01

申请号：US17393584

申请日：2021-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-I Lin ,  Ming-Ho Lin ,  Chun-Heng Chen ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

公开(公告)号：US20220359720A1

公开(公告)日：2022-11-10

申请号：US17813793

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

公开(公告)号：US11437491B2

公开(公告)日：2022-09-06

申请号：US16880464

申请日：2020-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Ho Lin ,  Cheng-I Lin ,  Chun-Heng Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/06 ,  H01L21/3213

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.