公开(公告)号：US20180335697A1

公开(公告)日：2018-11-22

申请号：US15597309

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/095 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/094 ,  G03F7/091 ,  G03F7/095 ,  G03F7/11 ,  H01L21/0274

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

公开(公告)号：US20170315447A1

公开(公告)日：2017-11-02

申请号：US15182160

申请日：2016-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/40 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/40 ,  G03F7/203 ,  G03F7/325 ,  G03F7/405

Abstract: A method of lithography patterning includes forming a resist layer over a substrate and providing a radiation with a first exposure dose to define an opening to be formed in the resist layer. The opening is to have a target critical dimension CD1 after developed by a negativ-tone development (NTD) process. The method further includes exposing the resist layer to the radiation with a second exposure dose less than the first exposure dose and developing the resist layer in a negative-tone development process to remove unexposed portions of the resist layer, resulting in an opening between resist patterns. A critical dimension CD2 of the opening is greater than CD1 by a delta. The method further includes forming an interfacial layer on sidewalls of the resist patterns. The interfacial layer has a thickness that is substantially equal to half of the delta.

公开(公告)号：US09768022B2

公开(公告)日：2017-09-19

申请号：US15007825

申请日：2016-01-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  G03F7/09 ,  G03F7/11 ,  G03F7/30 ,  G03F7/32 ,  G03F7/039

CPC classification number: H01L21/0273 ,  G03F7/039 ,  G03F7/091 ,  G03F7/11 ,  G03F7/30 ,  G03F7/322 ,  H01L21/0332

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes providing a substrate, forming a crosslinked layer over the substrate, wherein the crosslinked layer is in contact with the substrate, forming a patterned layer over the crosslinked layer, forming a pattern in the crosslinked layer and further in the substrate by using the patterned layer as a mask, treating the crosslinked layer by using a radiation source to transition the crosslinked layer to a de-crosslinked layer with a reduced molecular weight, and removing the de-crosslinked layer by using a solution that is not subject to cause damage on the substrate.

公开(公告)号：US12292684B2

公开(公告)日：2025-05-06

申请号：US17247301

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Tzu-Yang Lin ,  Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US11769678B2

公开(公告)日：2023-09-26

申请号：US17100218

申请日：2020-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Yang Lin ,  Cheng-Han Wu ,  Chen-Yu Liu ,  Kuo-Shu Tseng ,  Shang-Sheng Li ,  Chen Yi Hsu ,  Yu-Cheng Chang

IPC: H01L21/67

CPC classification number: H01L21/67242 ,  H01L21/67023

Abstract: A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

公开(公告)号：US20180341177A1

公开(公告)日：2018-11-29

申请号：US15694222

申请日：2017-09-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32

CPC classification number: G03F7/325 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US10115585B2

公开(公告)日：2018-10-30

申请号：US15628261

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: C08G77/16 ,  H01L21/02 ,  H01L21/308 ,  H01L21/033 ,  C08G77/52 ,  C08G77/00

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

公开(公告)号：US10083832B1

公开(公告)日：2018-09-25

申请号：US15468109

申请日：2017-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Ming-Hui Weng

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D201/06 ,  G03F7/11 ,  G03F7/16 ,  G03F7/09

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

公开(公告)号：US20180174828A1

公开(公告)日：2018-06-21

申请号：US15595525

申请日：2017-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/311

CPC classification number: C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3081

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

公开(公告)号：US11822237B2

公开(公告)日：2023-11-21

申请号：US17071004

申请日：2020-10-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Jia-Lin Wei ,  Yen-Yu Chen ,  Jr-Hung Li ,  Yahru Cheng ,  Chi-Ming Yang ,  Tze-Liang Lee ,  Ching-Yu Chang

IPC: G03F7/004 ,  H01L21/033 ,  G03F7/00

CPC classification number: G03F7/004 ,  G03F7/0035 ,  H01L21/0332

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.