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公开(公告)号：US10096664B2
公开(公告)日：2018-10-09
申请号：US15473153
申请日：2017-03-29
发明人： Jiangbo Yao
摘要： A method for manufacturing a flexible organic light emitting display is disclosed. The method is: sequentially forming a first buffer layer, a switch array layer, a display unit layer, and a thin film package layer on a flexible underlay substrate. When the flexible organic light emitting display bends along the flexible underlay substrate, a first bending deformation force is generated. The first buffer layer is used to absorb the first bending deformation force, and the material of the first buffer layer is an organic insulating material.
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公开(公告)号：US09461107B2
公开(公告)日：2016-10-04
申请号：US14406280
申请日：2014-10-16
发明人： Jiangbo Yao
IPC分类号： H01L21/00 , H01L29/04 , H01S3/225 , H01S3/041 , H01L29/66 , H01L29/16 , B23K26/00 , H01L21/02
CPC分类号： H01L29/04 , B23K26/00 , H01L21/02532 , H01L21/02686 , H01L27/1281 , H01L27/1285 , H01L29/16 , H01L29/6675 , H01L29/78603 , H01S3/041 , H01S3/225
摘要： An excimer laser annealing apparatus and the method thereof are disclosed. The apparatus has a substrate holder and an excimer laser unit. The substrate holder has a support surface for supporting a substrate having an amorphous silicon film and a thermoregulating module. The thermoregulating module is used to regulate the temperature on the support surface so as to control crystal orientation of amorphous silicon in the amorphous silicon film. With the thermoregulating module being added, the excimer laser annealing apparatus can control the orientation of recrystallizing of the amorphous silicon.
摘要翻译： 公开了一种准分子激光退火装置及其方法。 该装置具有衬底保持器和准分子激光器单元。 衬底保持器具有用于支撑具有非晶硅膜和温度调节模块的衬底的支撑表面。 温度调节模块用于调节支撑表面的温度，以控制非晶硅膜中非晶硅的晶体取向。 在添加了温度调节模块的情况下，准分子激光退火装置能够控制非晶硅的再结晶取向。
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公开(公告)号：US09324596B2
公开(公告)日：2016-04-26
申请号：US14240332
申请日：2014-01-17
发明人： Jiangbo Yao , Chunliang Lee
IPC分类号： A47G19/08 , H01L21/673 , B25H3/04
CPC分类号： H01L21/67326 , B25H3/04
摘要： The present disclosure relates to a substrate storage rack, including a hollow rack body with a first, a second, a third, and a fourth lateral surfaces, wherein at least one substrate laying layer is arranged in the rack body along a vertical direction. The substrate laying layer includes: a first support connected with the rack body and arranged at the second lateral surface; first supporting bars transversely arranged on the first support and extending to the interior of the rack body; a second support connected with the rack body and arranged at the fourth lateral surface; and second supporting bars transversely arranged on the second support and extending to the interior of the rack body. Since the first and the second supporting bars are arranged on the second and the fourth lateral surfaces of the rack body respectively, storing substrates in the rack body can be ensured. Then, the first lateral surface can be used as a fetching and feeding port for an automatic manipulator arm and the fourth lateral surface can be used as a manual fetching and feeding port, so that bidirectional fetching and feeding of the substrates in the substrate storage rack can be realized, and thus the production efficiency can be effectively improved.
摘要翻译： 本公开涉及一种基板存储架，其包括具有第一，第二，第三和第四侧表面的中空框体，其中至少一个基板铺设层沿着垂直方向布置在所述齿条体中。 衬底敷设层包括：第一支撑件，其与所述齿条体连接并且布置在所述第二侧表面处; 第一支撑杆横向布置在第一支撑件上并延伸到齿条体的内部; 第二支撑件，其与所述齿条体连接并且布置在所述第四侧表面处; 横向布置在第二支撑件上并延伸到机架主体内部的第二支撑杆。 由于第一支撑杆和第二支撑杆分别布置在齿条体的第二和第四侧面上，因此可以确保在基座上存储基板。 然后，第一侧面可以用作自动操纵臂的取出和进给口，并且第四侧面可以用作手动取出和进给口，使得基板存储架中的基板的双向取入和进给 可以实现，从而可以有效地提高生产效率。
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公开(公告)号：US20150255356A1
公开(公告)日：2015-09-10
申请号：US14241823
申请日：2014-01-21
发明人： Jiangbo Yao
CPC分类号： H01L22/26 , G03F7/38 , G03F7/40 , H01L21/67103 , H01L21/67248 , H01L21/67253 , H01L21/68 , H01L22/12
摘要： The present disclosure discloses a substrate baking device and a method for adjusting temperatures thereof. The substrate baking device comprises a baking device body having a hot plate composed of a plurality of subplates for baking a substrate, and a temperature adjusting mechanism for adjusting heating temperatures in the plurality of subplates of the baking device body. A heat conducting layer is arranged on the hot plate to cover the plurality of subplates. The substrate baking device is capable of improving film thickness uniformity.
摘要翻译： 本公开公开了一种基板烘烤装置及其温度调节方法。 基板烘烤装置包括具有由多个用于烘烤基板的底板组成的加热板的烘烤装置本体，以及用于调节烘烤装置主体的多个底板中的加热温度的温度调节机构。 导热层布置在热板上以覆盖多个底板。 基板烘烤装置能够提高膜厚均匀性。
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公开(公告)号：US20180342643A1
公开(公告)日：2018-11-29
申请号：US15551282
申请日：2017-06-20
发明人： Macai Lu , Jiangbo Yao
IPC分类号： H01L33/00 , H01L21/683
CPC分类号： H01L33/005 , H01L21/6835 , H01L33/00 , H01L33/0095 , H01L33/20 , H01L2221/68368 , H01L2221/68381
摘要： The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes. This is capable of lowering the difficulty of transferring the micro light-emitting diodes, and enhancing the efficiently of transferring the micro light-emitting diodes.
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16.发明授权公开(公告)号：US10115748B2
公开(公告)日：2018-10-30
申请号：US15033624
申请日：2016-02-18
发明人： Jiangbo Yao
IPC分类号： H01L21/00 , H01L27/12 , H01L29/24 , H01L29/786 , H01L29/22 , G02F1/1362 , G02F1/1368 , H01L27/32
摘要： Provided are a thin film transistor array substrate and a manufacture method thereof, comprising: providing a substrate, and the substrate comprises a first surface and a second surface, which are oppositely located; forming a gate on the first surface; forming a first insulative layer, which covers on the gate; forming a metal oxide semiconductor layer on the first insulative layer; implementing ion implantation to two end regions of the metal oxide semiconductor layer, and the two end regions after the ion implantation respectively are a source and a drain, and a region without the ion implantation is an active layer; forming a second insulative layer, which covers the source, the drain and the active layer; opening a via exposing the source or the drain in the second insulative layer; forming a pixel electrode on the second insulative layer, and connected with the source or the drain through the via.
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公开(公告)号：US10082714B2
公开(公告)日：2018-09-25
申请号：US15100297
申请日：2016-03-31
发明人： Jiangbo Yao
IPC分类号： H01L29/66 , G02F1/1368 , H01L21/027 , H01L29/417 , H01L21/02 , H01L21/285 , H01L21/443 , H01L29/786 , H01L29/24 , H01L27/12 , G02F1/1362 , H01L29/423 , G02F1/1333
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136227 , G02F2202/10 , G02F2202/103 , H01L21/02532 , H01L21/02565 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/0273 , H01L21/2855 , H01L21/443 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L27/127 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/66765 , H01L29/66969 , H01L29/78669 , H01L29/7869 , H01L29/78696 , H01L2029/42388
摘要： A thin-film transistor substrate manufacturing method includes sequentially forming, on a backing, a gate electrode, a gate insulation layer, a source electrode and an active layer, a passivation layer, a drain electrode, and a pixel electrode. Orthogonal projections of the gate electrode, the gate insulation layer, the source electrode and the active layer, the passivation layer, the drain electrode, and the pixel electrode on the backing that are concentric centro-symmetric patterns. Also provided re a thin-film transistor substrate and a liquid crystal panel including the thin-film transistor substrate. The thin-film transistor substrate manufacturing method, the thin-film transistor substrate and the liquid crystal panel including the thin-film transistor substrate allow electrical property of a thin-film transistor consistent in all bending directions and make the thin-film transistor not easily subjected to stress damage during bending so as to improve the reliability of the thin-film transistor.
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公开(公告)号：US09947888B2
公开(公告)日：2018-04-17
申请号：US14775833
申请日：2015-08-25
发明人： Jiangbo Yao
CPC分类号： H01L51/5228 , H01L27/3244 , H01L27/3258 , H01L27/3279 , H01L51/5012 , H01L51/5209 , H01L51/5225 , H01L2251/558
摘要： An organic light emitting device includes: one thin film transistor (TFT) and a first auxiliary electrode on the first substrate; a second auxiliary electrode being overlapped and being electrically connected with the first auxiliary electrode; a light emitting unit above and being electrically connected with the TFT, the light emitting unit comprising a first and a second pixel electrode, an organic light-emitting layer between the first and the second pixel electrode; wherein the second pixel electrode comprising a first area and a second area connecting with the first area, the first area being above and electrically connecting with the second auxiliary electrode, wherein the organic light-emitting layer being spaced apart from the second auxiliary electrode by a portion between the organic light-emitting layer and the second auxiliary electrode; and wherein tops of the first and the second area of the second pixel electrode are on the same plane.
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公开(公告)号：US09634036B1
公开(公告)日：2017-04-25
申请号：US15120753
申请日：2016-06-03
发明人： Jiangbo Yao
IPC分类号： H01L29/786 , H01L27/12 , H01L29/36
CPC分类号： H01L27/124 , H01L29/36 , H01L29/41733 , H01L29/45 , H01L29/7869
摘要： The present disclosure proposes a metal oxide thin-film transistor, a method of fabricating the metal oxide thin-film transistor, and an array substrate. The metal oxide TFT includes a glass substrate, a gate, a gate insulating layer, a metal oxide active layer, an etching blocking layer with a source hole and a drain hole thereon, a blocking spread layer including a source blocking layer and a drain blocking layer, a source, and a drain. The blocking spread layer is doped with boron ions and/or phosphorus ions of predetermined concentration.
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公开(公告)号：US09586851B2
公开(公告)日：2017-03-07
申请号：US14381198
申请日：2014-05-28
发明人： Jiangbo Yao
IPC分类号： C03B33/10 , B26D7/18 , C03B33/023 , C03B33/03 , G02F1/13 , G02F1/1333
CPC分类号： C03B33/10 , B26D7/1863 , B65G2249/04 , C03B33/023 , C03B33/03 , C03B33/105 , G02F1/1303 , G02F1/133351 , G02F2001/133302 , Y02P40/57
摘要： The present invention provides a method for cutting a single sheet of glass substrate, which includes the following steps: (1) providing a single sheet of glass substrate (10) to be cut and a cutting platform (20); (2) fixing the single sheet of glass substrate (10) on the cutting platform (20); (3) rotating the cutting platform (20) to have the single sheet of glass substrate (10) located under the cutting platform (20); (4) providing a cutting head (30) under the cutting platform (20) to proceed with a cutting operation on the single sheet of glass substrate (10) and also providing a vacuum suction device (40) and a static electricity elimination device (50) to remove glass chips generated by the cutting head (30) cutting the single sheet of glass substrate (10); and (5) after the cutting operation, moving the cutting platform (20) away from the cutting head (30), the vacuum suction device (40), and the static electricity elimination device (50) and rotating the cutting platform (20) to have the cut single sheet of glass substrate (10) located above the cutting platform.
摘要翻译： 本发明提供了一种用于切割单片玻璃基板的方法，其包括以下步骤：（1）提供待切割的单片玻璃基板（10）和切割平台（20）; （2）将单片玻璃基板（10）固定在切割平台（20）上; （3）使所述切割平台（20）旋转以使所述单片玻璃基板（10）位于所述切割平台（20）下方; （4）在所述切割平台（20）下方设置切割头（30），以在所述单片玻璃基板（10）上进行切割操作，并且还提供真空抽吸装置（40）和静电消除装置 以除去由所述切割头（30）产生的切割所述单片玻璃基板（10）的玻璃碎片; 和（5）切割操作之后，使切割平台（20）远离切割头（30），真空抽吸装置（40）和静电消除装置（50）移动并使切割平台（20）旋转， 使切割的单片玻璃基板（10）位于切割平台上方。
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