公开(公告)号：US11495631B2

公开(公告)日：2022-11-08

申请号：US16785098

申请日：2020-02-07

申请人： Sensors Unlimited, Inc.

发明人： Wei Huang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  John Liobe ,  Wei Zhang

IPC分类号： H01L27/146

摘要： A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

公开(公告)号：US20200312900A1

公开(公告)日：2020-10-01

申请号：US16902318

申请日：2020-06-16

申请人： Sensors Unlimited, Inc.

发明人： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC分类号： H01L27/146 ,  H01L23/00 ,  H01L25/16

摘要： A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US10727267B2

公开(公告)日：2020-07-28

申请号：US16129402

申请日：2018-09-12

申请人： Sensors Unlimited, Inc.

发明人： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC分类号： H01L27/146 ,  H01L25/16 ,  H01L23/488 ,  H01L23/00

摘要： A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US20200083272A1

公开(公告)日：2020-03-12

申请号：US16129402

申请日：2018-09-12

申请人： Sensors Unlimited, Inc.

发明人： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Wei Huang ,  Paul L. Bereznycky ,  Namwoong Paik

IPC分类号： H01L27/146 ,  H01L23/00

摘要： A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

公开(公告)号：US10566371B2

公开(公告)日：2020-02-18

申请号：US16126314

申请日：2018-09-10

申请人： Sensors Unlimited, Inc.

发明人： Namwoong Paik ,  Wei Huang

IPC分类号： H01L23/48 ,  H01L27/146 ,  H01L23/00

摘要： A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

公开(公告)号：US10468437B2

公开(公告)日：2019-11-05

申请号：US15935080

申请日：2018-03-26

申请人： Sensors Unlimited, Inc.

发明人： Wei Huang ,  Wei Zhang ,  Joshua Lund ,  Namwoong Paik

IPC分类号： H01L21/02 ,  H01L27/144 ,  H01L31/109 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0216 ,  H01L31/18

摘要： A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

公开(公告)号：US20180102391A1

公开(公告)日：2018-04-12

申请号：US15289627

申请日：2016-10-10

申请人： Sensors Unlimited, Inc.

发明人： Namwoong Paik ,  Wei Huang

IPC分类号： H01L27/146

CPC分类号： H01L27/14634 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14605 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469 ,  H01L2224/034 ,  H01L2224/03622 ,  H01L2224/03912 ,  H01L2224/05571 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/119 ,  H01L2224/13007 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

公开(公告)号：US20170125465A1

公开(公告)日：2017-05-04

申请号：US14931569

申请日：2015-11-03

申请人： Sensors Unlimited, Inc.

发明人： Prabhu Mushini ,  Wei Huang

IPC分类号： H01L27/146 ,  H01L31/102 ,  H01L31/0216

摘要： A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

公开(公告)号：US20230299223A1

公开(公告)日：2023-09-21

申请号：US17696342

申请日：2022-03-16

申请人： Sensors Unlimited, Inc.

发明人： John Liobe ,  Krishna Linga ,  Wei Huang

IPC分类号： H01L31/107 ,  H01L31/0352 ,  H01L31/0304

CPC分类号： H01L31/1075 ,  H01L31/035281 ,  H01L31/03046

摘要： In accordance with at least one aspect of this disclosure, a photodiode structure can include a charge layer comprised of undoped InP, and a detector active area forming a junction with the charge layer and having edges configured to prevent edge breakdown. The location of the junction can be controlled through a diffusion of the detector active area or through an epitaxially grown doped region, for example. The photodiode structure can also include a charge control layer comprised of doped InP. The charge control layer can include a thickness and carrier concentration configured to achieve a predetermined gain, high speed, low dark current, and low break down voltage.

公开(公告)号：US20210249455A1

公开(公告)日：2021-08-12

申请号：US16785065

申请日：2020-02-07

申请人： Sensors Unlimited, Inc.

发明人： Wei Huang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  John Liobe ,  Wei Zhang

IPC分类号： H01L27/146

摘要： A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.