公开(公告)号：US11075088B2

公开(公告)日：2021-07-27

申请号：US16812925

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US12020903B2

公开(公告)日：2024-06-25

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01L21/3065 ,  H01L21/6833 ,  H03H7/38 ,  H01J2237/334

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20240128055A1

公开(公告)日：2024-04-18

申请号：US18232992

申请日：2023-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae Kim ,  Jihwan Kim ,  Sangki Nam ,  Daeun Son ,  Seungbo Shim ,  Juho Lee ,  Hyunjae Lee ,  Hyunhak Jeong

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J2237/0473

Abstract: A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.

公开(公告)号：US20230118000A1

公开(公告)日：2023-04-20

申请号：US17970242

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyong Lim ,  Sungyeol Kim ,  Yongwon Cho ,  Younghwan Choi ,  Chunyoon Park ,  Seungbo Shim ,  Hyungjung Yong ,  Jaejoong Lee

IPC: H01J37/32

Abstract: A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.

公开(公告)号：US11545341B2

公开(公告)日：2023-01-03

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11516917B2

公开(公告)日：2022-11-29

申请号：US17172351

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Younggirl Yun ,  Sunggeun Kang ,  Myungsub Ko ,  Jaeyeon Ra ,  Seungbo Shim ,  Yongjin Woo ,  Junhee Han

IPC: H05K1/11 ,  H05K1/14 ,  H05K1/02

Abstract: An electronic device includes a processor and a printed circuit board on which the processor is mounted. The printed circuit board includes a first circuit board, a first interposer formed on a first portion of the first circuit board, a second interposer formed on a second portion of the first circuit board that is adjacent to the first portion, a second circuit board coupled to the first interposer, and a third circuit board coupled to the second interposer.

公开(公告)号：US20210251079A1

公开(公告)日：2021-08-12

申请号：US17172351

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon PARK ,  Younggirl Yun ,  Sunggeun Kang ,  Myungsub Ko ,  Jaeyeon Ra ,  Seungbo Shim ,  Yongjin Woo ,  Junhee Han

IPC: H05K1/14 ,  H05K1/02

Abstract: An electronic device includes a processor and a printed circuit board on which the processor is mounted. The printed circuit board includes a first circuit board, a first interposer formed on a first portion of the first circuit board, a second interposer formed on a second portion of the first circuit board that is adjacent to the first portion, a second circuit board coupled to the first interposer, and a third circuit board coupled to the second interposer.

公开(公告)号：US12150266B2

公开(公告)日：2024-11-19

申请号：US17893739

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Seungbo Shim ,  Yongjin Woo ,  Junhee Han ,  Dongil Son

IPC: H05K7/14 ,  H05K1/02 ,  H05K5/00 ,  H04M1/02

Abstract: An electronic device is provided. The electronic device includes a housing, a first printed circuit board disposed in the inner space of the housing, a second printed circuit board disposed so as to overlap at least a portion of the first printed circuit board, when the first printed circuit board is viewed from above, a first interposer disposed between the first printed circuit board and the second printed circuit board, and electrically connecting the first printed circuit board and the second printed circuit board, and at least one second interposer which is disposed between the first printed circuit board and the second printed circuit board so as to be spaced apart from the first interposer when the first printed circuit board is viewed from above, and which electrically connects the first printed circuit board and the second printed circuit board.

公开(公告)号：US11974397B2

公开(公告)日：2024-04-30

申请号：US17431917

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungbo Shim ,  Junghoon Park ,  Dongil Son

IPC: H05K1/14 ,  H04M1/02 ,  H05K1/02 ,  H05K1/18 ,  H05K7/14

CPC classification number: H05K1/14 ,  H04M1/0249 ,  H05K1/0216 ,  H05K1/181 ,  H05K7/1427 ,  H05K2201/10378

Abstract: According to various embodiments of the disclosure, an electronic device may comprise: a display, a first circuit board disposed under the display, at least one component disposed on one surface of the first circuit board, an interposer surrounding at least two sides of the at least one component and disposed on the first circuit board, and a second circuit board spaced apart from the first circuit board and including an area joined with the interposer. The interposer may include: a first interposer portion disposed along a first area of the first circuit board, a first end of the first interposer having at least a portion including a non-shielding area, and a second interposer portion disposed along a second area, adjacent to the first area, of the first circuit board, a second end of the second interposer facing the first end and having at least a portion including a non-shielding area.

公开(公告)号：US20240128054A1

公开(公告)日：2024-04-18

申请号：US18199982

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho Kim ,  Donghyeon Na ,  Yoonbum Nam ,  Seungbo Shim ,  Kyungsun Kim ,  Namkyun Kim

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32715 ,  H01L22/26 ,  H01J37/32568 ,  H01J37/32917 ,  H01J2237/2007 ,  H01J2237/24564 ,  H01J2237/334

Abstract: A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.