公开(公告)号：US10652828B2

公开(公告)日：2020-05-12

申请号：US16111331

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Young Jeon ,  Jae-Joon Seo ,  Jong-Gab Park ,  Sang-Min Lee

IPC: H04W52/02 ,  G01C21/12 ,  H04B1/3827

Abstract: According to various embodiments, an electronic device includes a housing configured to house a battery; a display configured to be disposed in the housing, to be exposed through a portion of the housing, and to be electrically connected to the battery; a motion detection sensor circuit configured to be disposed in the housing and to be electrically connected to the battery; a power management circuit configured to be disposed in the housing and to be electrically connected to the battery; and a processor configured to be functionally or electrically connected to the motion detection sensor circuit and the display and to be electrically connected to the power management circuit through a switch that is turned on when the processor is in a first mode and turned off when the processor is in a second mode, wherein, in the second mode, the motion detection sensor circuit detects a motion associated with the electronic device, and provides image data to the display in response to the detection of the motion. Other embodiments are also possible.

公开(公告)号：US20200092516A1

公开(公告)日：2020-03-19

申请号：US16415100

申请日：2019-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Bae Moon ,  Junho Park ,  Sang-Min Lee ,  Seongmin Cheon ,  Kyoung Hwan Kwon

IPC: H04N7/01 ,  H04N7/56 ,  G06F1/3234 ,  G06F3/041 ,  G06F3/047

Abstract: A display driver circuit includes a source driver configured to output display data to data lines, a controller configured to control the source driver, based on a synchronization signal, and a frequency adjusting circuit configured to extend a first time interval of the synchronization signal from a first length to a second length, such that time interval in which the display data is not output to the data lines is extended, when second image data are not received from an external device during a reference time interval after first image data are received from the external device, and shorten the first time interval, from the second length to a third length, when an instruction is received from the external device after the first time interval is extended to the second length.

公开(公告)号：US10347211B2

公开(公告)日：2019-07-09

申请号：US15720212

申请日：2017-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Min Lee

IPC: G09G3/22 ,  G09G5/10 ,  H04N9/64 ,  G09G5/02 ,  G09G5/06 ,  G09G3/20

Abstract: A display driving system includes a display driver integrated circuit, and the display driver integrated circuit includes a brightness calculating circuit, an image complexity calculating circuit, a weight calculating circuit and a look up table. The brightness calculating circuit calculates brightness of image data and generates brightness data. The image complexity calculating circuit calculates image complexity and generates weight data, based on a pattern of the image data. The weight calculating circuit receives brightness data and a weight data to generate brightness correction data.

公开(公告)号：US20190146347A1

公开(公告)日：2019-05-16

申请号：US16109054

申请日：2018-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Min Lee ,  Sang-Hyun Park ,  Won-Don Joo

IPC: G03F7/20 ,  H01L21/027

Abstract: A maskless exposure method includes spatially modulating a light output from a light source into a pattern beam having a mask pattern, condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of an object layer, and into a second group of spot beams having a second focal position different from the first focal position, and scanning the object layer with the first and second groups of spot beams. The object layer has a first height and a second height different from the first height.

公开(公告)号：US09564369B1

公开(公告)日：2017-02-07

申请号：US15189664

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Min-Choul Kim ,  Bo-Soon Kim ,  Min-Yeop Park ,  Sang-Min Lee

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/823431 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76224 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/66545 ,  H01L29/6656

Abstract: Methods are provided for manufacturing semiconductor devices include forming a first fin protruding on a substrate and extending in a first direction; forming first and second sacrificial gate insulating layers on the first fin, the first and second sacrificial gate insulating layers intersecting the first fin and being spaced apart from each other; forming first and second sacrificial gate electrodes respectively on the first and second sacrificial gate insulating layers; forming a first insulating layer on the first and second sacrificial gate electrodes; removing a portion of the first insulating layer to expose the second sacrificial gate electrode; removing the exposed second sacrificial gate electrode using a first etching process to expose the second sacrificial gate insulating layer; removing the exposed second sacrificial gate insulating layer using a second etching process different from the first etching process to form a first trench which exposes the first fin; forming a first recess in the exposed first fin using a third etching process different from the second etching process; and filling the first recess with a first device isolation layer.

Abstract translation: 提供用于制造半导体器件的方法包括形成在基板上突出并沿第一方向延伸的第一鳍; 在所述第一翅片上形成第一和第二牺牲栅极绝缘层，所述第一和第二牺牲栅绝缘层与所述第一鳍片相交并且彼此间隔开; 在第一和第二牺牲栅极绝缘层上分别形成第一和第二牺牲栅电极; 在所述第一和第二牺牲栅电极上形成第一绝缘层; 去除所述第一绝缘层的一部分以暴露所述第二牺牲栅电极; 使用第一蚀刻工艺去除所暴露的第二牺牲栅电极以暴露第二牺牲栅极绝缘层; 使用与第一蚀刻工艺不同的第二蚀刻工艺去除暴露的第二牺牲栅极绝缘层，以形成暴露第一鳍片的第一沟槽; 使用与第二蚀刻工艺不同的第三蚀刻工艺在暴露的第一翅片中形成第一凹部; 以及用第一器件隔离层填充第一凹部。

公开(公告)号：US08946069B2

公开(公告)日：2015-02-03

申请号：US14138721

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Wook Lee ,  Myeong-Cheol Kim ,  Sang-Min Lee ,  Young-Ju Park ,  Hyung-Yong Kim ,  Myung-Hoon Jung

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/11 ,  H01L29/66636 ,  H01L29/78

Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

Abstract translation: 半导体器件的制造方法包括提供具有第一区域和第二区域的衬底，在衬底的第一区域中形成多个第一栅极，使得第一栅极以第一间距相互间隔开， 在所述衬底的所述第二区域中形成多个第二栅极，使得所述第二栅极以不同于所述第一间距的第二间距彼此间隔开，将蚀刻速率调节掺杂剂注入所述第二区域以形成注入区域， 同时阻挡第一区域，通过蚀刻多个第一栅极之间的第一区域形成第一沟槽，并且通过蚀刻多个第二栅极之间的第二区域形成第二沟槽。