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    Semiconductor device
    12.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11387236B2

    公开(公告)日：2022-07-12

    申请号：US16840880

    申请日：2020-04-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jongho Park ,  Jaeyeol Song ,  Wandon Kim ,  Byounghoon Lee ,  Musarrat Hasan

    IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786

    Abstract: A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.

    Integrated circuits and method of manufacturing the same
    13.
    发明授权
    Integrated circuits and method of manufacturing the same 有权

    公开(公告)号：US11990473B2

    公开(公告)日：2024-05-21

    申请号：US17723532

    申请日：2022-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaeyeol Song ,  Seungha Oh ,  Rakhwan Kim ,  Minjung Park ,  Dongsoo Lee

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823462 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

    Abstract: An integrated circuit (IC) device includes first and second fin-type semiconductor active regions on a substrate. A plurality of first semiconductor patterns are provided, which are stacked on the first fin-type active region as a first plurality of spaced-apart channel regions of a first FINFET. A plurality of second semiconductor patterns are provided, which are stacked on the second fin-type active region as a second plurality of spaced-apart channel regions of a second FINFET. A first gate structure is provided on the plurality of first semiconductor patterns. This first gate structure includes a first material region, which at least partially fills spaces between the first plurality of spaced-apart channel regions. A second gate structure is also provided on the plurality of second semiconductor patterns. The second gate structure includes second and third material regions, which at least partially fill spaces between the second plurality of spaced-apart channel regions.

    Semiconductor device and method of manufacturing the same
    16.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US10461167B2

    公开(公告)日：2019-10-29

    申请号：US15861949

    申请日：2018-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongsoo Lee ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

    IPC: H01L29/49 ,  H01L21/82 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/36

    Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

    Semiconductor devices and methods of manufacturing the same
    18.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US09337295B2

    公开(公告)日：2016-05-10

    申请号：US14317289

    申请日：2014-06-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junehee Lee ,  Sangjin Hyun ,  Jaeyeol Song ,  Hye-Lan Lee

    IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

    CPC classification number: H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

    Abstract: Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.

    Abstract translation: 公开了半导体器件及其制造方法。 半导体器件在衬底上的栅极电介质图案和与衬底相对的栅极电介质图案上的栅极电极。 栅电极包括设置在栅极电介质图案上并包括铝的第一导电图案，以及设置在第一导电图案和栅极电介质图案之间的第二导电图案。 第二导电图案的铝浓度高于第一导电图案的铝浓度。 第二导电图案可以比第一导电图案更厚。

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