公开(公告)号：US08902632B2

公开(公告)日：2014-12-02

申请号：US13718206

申请日：2012-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-bae Kim ,  Hyun-sang Hwang ,  Chang-jung Kim

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56 ,  H01L45/00 ,  G11C11/21

CPC classification number: G11C11/21 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

Abstract: Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state.

Abstract translation: 混合电阻式存储器件及其操作和制造方法包括至少两个电阻存储器单元。 所述至少两个电阻式存储器单元中的至少一个是被配置为在长期可塑性状态下操作的电阻存储器单元。

公开(公告)号：US09865246B2

公开(公告)日：2018-01-09

申请号：US14296567

申请日：2014-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea Advanced Institute of Science and Technology

Inventor： Sung-chan Kang ,  Jong-seok Kim ,  Chang-jung Kim ,  Seung-bum Yang ,  Young-jae Oh ,  Yong-seop Yoon ,  Ki-hun Jeong

IPC: C23F1/00 ,  G10K15/04 ,  B06B1/00

CPC classification number: G10K15/046 ,  B06B1/00

Abstract: Provided are a laser-induced ultrasound generator and a method of manufacturing the laser-induced ultrasound generator. The laser-induced ultrasound generator includes: a substrate including a plurality of nanostructures provided on a first surface of the substrate; and a thermoelastic layer provided on the first surface of the substrate, the thermoelastic layer being configured to generate an ultrasound by absorbing a laser beam incident onto a second surface of the substrate, the second surface facing the first surface. The nanostructures may be cylinder-shaped nano-pillars.

公开(公告)号：US09577645B2

公开(公告)日：2017-02-21

申请号：US13894526

申请日：2013-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-kun Yoon ,  Young Kim ,  Chae-hun Lee ,  Chang-jung Kim ,  Jae-chul Park

IPC: H03K21/00 ,  G01T1/24 ,  H03K21/10 ,  G01J1/44

CPC classification number: H03K21/10 ,  G01J1/44 ,  G01T1/247

Abstract: A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.

Abstract translation: 驱动器电路输出基于一个或多个能量级别的光子对列线进行分类和计数的结果。 驱动器电路包括用于从计数器接收结果的多路复用器，用于从多路复用器接收信号的驱动逆变器和电源，以及连接在电源和驱动逆变器的输入端之间的开关。

公开(公告)号：US09158003B2

公开(公告)日：2015-10-13

申请号：US13728013

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

IPC: G01T1/16 ,  H01L31/18 ,  G01T1/24 ,  H01L31/0352 ,  H01L31/119 ,  H01L27/146

CPC classification number: G01T1/16 ,  G01T1/243 ,  H01L27/14676 ,  H01L31/035281 ,  H01L31/119 ,  H01L31/18 ,  Y02E10/50

Abstract: A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Abstract translation: 多能量辐射检测器可以包括阵列基板，其包括多个单元电路，和/或阵列基板上的光电转换层。 光电转换层可以包括具有彼此不同的厚度的多个区域。 制造多能量辐射检测器的方法可以包括通过在衬底上形成和图案化第一金属层来形成栅极和第一电极; 在栅极和第一电极上形成绝缘层; 通过在所述绝缘层上形成和图案化半导体层来形成沟道层; 通过在沟道层上形成和构图第二金属层来形成源极，漏极和第二电极; 形成钝化层以覆盖源极，漏极和第二电极; 在钝化层上形成第一光电转换层; 和/或在第一光电转换层的一部分上形成第二光电转换层。

公开(公告)号：US09153778B2

公开(公告)日：2015-10-06

申请号：US13867411

申请日：2013-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-min Kim ,  Young-bae Kim ,  Chang-jung Kim ,  Seung-ryul Lee ,  Man Chang ,  Sung-ho Kim ,  Eun-ju Cho

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/55 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233

Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.

Abstract translation: 电阻式开关器件包括在第一电极和第二电极之间的第一材料层。 第一材料层具有平行于第一区域的第一区域和第二区域。 第一区域对应于形成在第一材料层中的导电路径，并且被配置为响应于大于或等于第一电压的施加电压从低电阻状态切换到高电阻状态。 第二区域被配置为当施加的电压大于或等于第二电压时，切换到低于高电阻状态下的第一区域的电阻值的第一电阻值。 当第二区域具有第一电阻值时，第一区域保持恒定或基本恒定。

公开(公告)号：US09475092B2

公开(公告)日：2016-10-25

申请号：US14287556

申请日：2014-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-sik Shim ,  Seog-woo Hong ,  Seok-whan Chung ,  Chang-jung Kim

IPC: H04R25/00 ,  B06B1/02 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B81C1/00182 ,  Y10T29/49005

Abstract: An electro-acoustic transducer includes: a conductive substrate in which a first trench is formed, and which includes an electrode connection unit surrounded by the first trench; a membrane provided on the conductive substrate; an upper electrode provided on the membrane to contact an upper surface of the electrode connection unit; a first electrode provided on a lower surface of the conductive substrate to contact a lower surface of the electrode connection unit; and a second electrode spaced apart from the first electrode and provided to contact the lower surface of the conductive substrate.

Abstract translation: 电声换能器包括：导电基板，其中形成有第一沟槽，并且包括由第一沟槽包围的电极连接单元; 设置在所述导电基板上的膜; 设置在所述膜上以与所述电极连接单元的上表面接触的上电极; 设置在所述导电基板的下表面上以接触所述电极连接单元的下表面的第一电极; 以及与所述第一电极间隔开并设置成与所述导电基板的下表面接触的第二电极。

公开(公告)号：US09411055B2

公开(公告)日：2016-08-09

申请号：US14102744

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-kun Yoon ,  Chang-jung Kim

IPC: G01T1/17 ,  G01T1/24 ,  H03K21/02

CPC classification number: G01T1/17 ,  G01T1/247 ,  G01T1/2928 ,  H03K21/026 ,  H04N5/32

Abstract: A photon-counting detector configured to detect photons included in multi-energy radiation. The photon-counting detector includes a pixel area configured to absorb photons incident thereto, and bias circuits configured to supply one of a bias voltage and a bias current to electronic devices in the pixel area, wherein the bias circuits are in the pixel area.

Abstract translation: 一种被配置为检测包括在多能辐射中的光子的光子计数检测器。 光子计数检测器包括被配置为吸收入射到其上的光子的像素区域，以及被配置为向像素区域中的电子器件提供偏置电压和偏置电流中的一个的偏置电路，其中偏置电路在像素区域中。

公开(公告)号：US08994136B2

公开(公告)日：2015-03-31

申请号：US14017787

申请日：2013-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-chul Park ,  Young Kim ,  Chae-hun Lee ,  Yong-woo Jeon ,  Chang-jung Kim

IPC: H01L31/105 ,  H01L21/00 ,  H01L31/103 ,  H01L27/144

CPC classification number: H01L31/105 ,  G01T1/2018 ,  G01T1/208 ,  H01L27/1446 ,  H01L27/14658 ,  H01L31/103 ,  H01L31/107

Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Abstract translation: 硅光电倍增管检测器单元可以包括形成在同一衬底上的光电二极管区域和读出电路区域。 光电二极管区域可以包括暴露在硅光电倍增管检测器单元的表面上并掺杂有第一类型杂质的第一半导体层; 掺杂有第二类型杂质的第二半导体层; 和/或在第一半导体层和第二半导体层之间的第一外延层。 第一外延层可以接触第一半导体层和第二半导体层。 第一外延层可以以低于第一半导体层的第一类型杂质的浓度的浓度掺杂第一类型的杂质。