公开(公告)号：US09658349B2

公开(公告)日：2017-05-23

申请号：US14080031

申请日：2013-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae-hun Lee ,  Young Kim ,  Jae-chul Park ,  Yong-woo Jeon

IPC: G01T1/29 ,  G01T1/20

CPC classification number: G01T1/2985 ,  G01T1/2008

Abstract: An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.

公开(公告)号：US08994136B2

公开(公告)日：2015-03-31

申请号：US14017787

申请日：2013-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-chul Park ,  Young Kim ,  Chae-hun Lee ,  Yong-woo Jeon ,  Chang-jung Kim

IPC: H01L31/105 ,  H01L21/00 ,  H01L31/103 ,  H01L27/144

CPC classification number: H01L31/105 ,  G01T1/2018 ,  G01T1/208 ,  H01L27/1446 ,  H01L27/14658 ,  H01L31/103 ,  H01L31/107

Abstract: A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

Abstract translation: 硅光电倍增管检测器单元可以包括形成在同一衬底上的光电二极管区域和读出电路区域。 光电二极管区域可以包括暴露在硅光电倍增管检测器单元的表面上并掺杂有第一类型杂质的第一半导体层; 掺杂有第二类型杂质的第二半导体层; 和/或在第一半导体层和第二半导体层之间的第一外延层。 第一外延层可以接触第一半导体层和第二半导体层。 第一外延层可以以低于第一半导体层的第一类型杂质的浓度的浓度掺杂第一类型的杂质。

公开(公告)号：US09256317B2

公开(公告)日：2016-02-09

申请号：US14141785

申请日：2013-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-eon Ahn ,  I-hun Song ,  Ji-hoon Ahn ,  Yong-woo Jeon ,  Seung-hyup Lee

IPC: G06F3/041 ,  G06F3/042 ,  G06F3/044

CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/042 ,  G06F3/0421 ,  G06F3/044 ,  H01L27/14678 ,  H03K17/962 ,  H03K2017/9606

Abstract: A touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch, light-sensing unit configured to sense incident light, a first sensor gate line configured to provide a first gate signal for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line configured to provide a second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.

Abstract translation: 触摸屏设备包括像素行，包括被配置为显示图像的像素，被配置为感测物理触摸的触摸感测单元，被配置为感测入射光的光感测单元，被配置为提供用于激活的第一门信号的第一传感器栅极线 所述光感测单元并且重置所述触摸感测单元，第二传感器栅极线被配置为提供用于激活所述触摸感测单元并重置所述光感测单元的第二栅极信号，以及复位电路，被配置为提供公共电压 基于所述光感测单元和所述触摸感测单元中的至少一个的操作来到所述像素。