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公开(公告)号：US09319800B2
公开(公告)日：2016-04-19
申请号：US14317135
申请日：2014-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seog-woo Hong , Hyung-jae Shin , Dong-sik Shim , Byung-gil Jeong , Seok-whan Chung
CPC classification number: H04R23/00 , B06B1/0292 , B06B1/0685 , G10K11/002 , H04R2201/003
Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.
Abstract translation: 一种电声换能器包括设置有至少一个电池和至少一个电极的导电衬底以及与该导电衬底相对设置并且设置有至少一个对应于该电极的焊盘的焊盘衬底，其中至少一个电极 电极和焊盘包括用于电连接的电图案和设置在电图案周围以分离电图案的至少一个虚设图案。
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公开(公告)号：US20150163599A1
公开(公告)日：2015-06-11
申请号：US14287556
申请日：2014-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-sik SHIM , Seog-woo Hong , Seok-whan Chung , Chang-jung Kim
CPC classification number: B06B1/0292 , B81C1/00182 , Y10T29/49005
Abstract: An electro-acoustic transducer includes: a conductive substrate in which a first trench is formed, and which includes an electrode connection unit surrounded by the first trench; a membrane provided on the conductive substrate; an upper electrode provided on the membrane to contact an upper surface of the electrode connection unit; a first electrode provided on a lower surface of the conductive substrate to contact a lower surface of the electrode connection unit; and a second electrode spaced apart from the first electrode and provided to contact the lower surface of the conductive substrate.
Abstract translation: 电声换能器包括：导电基板，其中形成有第一沟槽，并且包括由第一沟槽包围的电极连接单元; 设置在所述导电基板上的膜; 设置在所述膜上以与所述电极连接单元的上表面接触的上电极; 设置在所述导电基板的下表面上以接触所述电极连接单元的下表面的第一电极; 以及与所述第一电极间隔开并设置成与所述导电基板的下表面接触的第二电极。
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公开(公告)号：US10093534B2
公开(公告)日：2018-10-09
申请号：US15922972
申请日：2018-03-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-sik Shim , Seog-woo Hong , Seok-whan Chung , Chang-jung Kim
Abstract: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.
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公开(公告)号：US09957155B2
公开(公告)日：2018-05-01
申请号：US14286460
申请日：2014-05-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-sik Shim , Seog-woo Hong , Seok-whan Chung , Chang-jung Kim
CPC classification number: B81B7/007 , B06B1/0292 , B81C1/00301
Abstract: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.
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5.发明授权Capacitive micromachined ultrasonic transducer and method of fabricating the same 有权电容式微加工超声波换能器及其制造方法公开(公告)号：US09596528B2
公开(公告)日：2017-03-14
申请号：US14280725
申请日：2014-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-sik Shim , Seog-woo Hong , Seok-whan Chung , Chang-jung Kim
IPC: H04R1/00 , H01L21/768 , H01L21/304 , H01L23/48 , H01L21/02 , B06B1/02
CPC classification number: H04R1/00 , B06B1/0292 , H01L21/0237 , H01L21/3043 , H01L21/768 , H01L23/481 , H01L2924/0002 , H04R19/005 , H01L2924/00
Abstract: A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.
Abstract translation: 一种电容微加工超声波换能器包括：器件基板，包括限定对应于多个元件的多个第一部分的第一沟槽和限制与多个第一部分分离的第二部分的第二沟槽;设置在器件基板上的支撑单元， 限制与所述多个元件中的每一个相对应的多个空腔;设置在所述支撑单元上以覆盖所述多个空腔的膜;设置在所述膜上并通过通孔电连接到所述第二沟槽中的所述第二部分的上电极 穿过膜和支撑单元，以及设置在器件衬底的下表面上的穿硅通孔（TSV）衬底，并且包括连接到多个第一部分的多个第一通孔金属和连接到多个第一通孔的第二通孔金属 到第二部分。
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Patent Agency Ranking
公开(公告)号：US09525948B2
公开(公告)日：2016-12-20
申请号：US14262988
申请日：2014-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-ha Park , Sung-chan Kang , Dong-kyun Kim , Seog-woo Hong
CPC classification number: H04R23/00 , H04R2201/003
Abstract: An electro-acoustic transducer includes a plurality of elements that each includes a plurality of cells. The plurality of cells includes at least two membranes that have different thicknesses. The respective frequency bands of the plurality of elements are broader than respective frequency bands of the plurality of cells that configure the plurality of elements.
Abstract translation: 电声换能器包括多个元件，每个元件包括多个单元。 多个电池包括至少两个具有不同厚度的膜。 多个元件的各个频带比配置多个元件的多个单元的相应频带宽。
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公开(公告)号：US09090458B2
公开(公告)日：2015-07-28
申请号：US13960874
申请日：2013-08-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seog-woo Hong
CPC classification number: B81C1/00158 , B06B1/0292 , B81B2201/0271 , B81B2207/096 , B81C1/00095 , G01N29/2406
Abstract: An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a conductive substrate, a projection which is disposed on the conductive substrate and which forms a cavity therein, a via hole which penetrates the projection and conductive substrate, a first electrode which includes a metal and which fills the via hole, a second electrode which is provided on a bottom of the conductive substrate, a membrane which is provided on the projection and which covers the cavity, and an upper electrode which is provided on the membrane and which contacts the first electrode.
Abstract translation: 公开了一种超声换能器及其制造方法。 所述超声波换能器包括导电性基板，配置在所述导电性基板上并在其内形成空洞的突起，贯通所述突起和导电性基板的通路孔，包含金属并填充所述通孔的第一电极， 设置在导电性基板的底部的第二电极，设置在突起上且覆盖空腔的膜，以及设置在膜上并与第一电极接触的上部电极。
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公开(公告)号：US09475092B2
公开(公告)日：2016-10-25
申请号：US14287556
申请日：2014-05-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-sik Shim , Seog-woo Hong , Seok-whan Chung , Chang-jung Kim
CPC classification number: B06B1/0292 , B81C1/00182 , Y10T29/49005
Abstract: An electro-acoustic transducer includes: a conductive substrate in which a first trench is formed, and which includes an electrode connection unit surrounded by the first trench; a membrane provided on the conductive substrate; an upper electrode provided on the membrane to contact an upper surface of the electrode connection unit; a first electrode provided on a lower surface of the conductive substrate to contact a lower surface of the electrode connection unit; and a second electrode spaced apart from the first electrode and provided to contact the lower surface of the conductive substrate.
Abstract translation: 电声换能器包括：导电基板，其中形成有第一沟槽，并且包括由第一沟槽包围的电极连接单元; 设置在所述导电基板上的膜; 设置在所述膜上以与所述电极连接单元的上表面接触的上电极; 设置在所述导电基板的下表面上以接触所述电极连接单元的下表面的第一电极; 以及与所述第一电极间隔开并设置成与所述导电基板的下表面接触的第二电极。
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9.发明授权Capacitive micro-machined ultrasonic transducer and method of singulating the same 有权电容式微加工超声波换能器及其分选方法公开(公告)号：US09206038B2
公开(公告)日：2015-12-08
申请号：US14298195
申请日：2014-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byung-gil Jeong , Seog-woo Hong
CPC classification number: B81C1/00888 , B06B1/0292 , B81B2201/0271 , H04R19/005
Abstract: A capacitive micro-machined ultrasonic transducer (CMUT) and a method of singulating the same. Singulating CMUTs may include forming first trenches in regions of a device wafer defining a plurality of ultrasonic transducer structures, the device wafer including a plurality of the ultrasonic transducer structures, forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer supplying electricity to the plurality of ultrasonic transducers and the device wafer, and dicing the ultrasonic transducer wafer to form the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures on the first trench and the electrode pad wafer below the first trench.
Abstract translation: 一种电容微加工超声波换能器（CMUT）及其分离方法。 编码CMUT可以包括在限定多个超声换能器结构的器件晶片的区域中形成第一沟槽，器件晶片包括多个超声波换能器结构，通过将电极焊盘晶片结合形成具有多个超声换能器的超声换能器晶片 向所述多个超声波换能器和所述装置晶片供电;以及通过在所述第一沟槽下方的所述第一沟槽和所述电极焊盘晶片上切割所述多个超声波换能器结构来切割所述超声波换能器晶片以形成所述多个超声换能器。
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公开(公告)号：US09096418B2
公开(公告)日：2015-08-04
申请号：US14012350
申请日：2013-08-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seog-woo Hong , Dong-kyun Kim , Byung-gil Jeong , Seok-whan Chung
CPC classification number: B81B3/0027 , A61B8/4483 , B06B1/0292 , B06B2201/76 , B81C1/00158
Abstract: An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a first electrode layer which is disposed to cover a conductive substrate and an inner wall and a top of a via hole penetrating a membrane and has a top surface at a same height as a top surface of the membrane; a second electrode layer which is disposed on a bottom surface of the conductive substrate to be spaced apart from the first electrode layer; and a top electrode which is disposed on the top surface of the membrane and which contacts the top surface of the first electrode layer.
Abstract translation: 公开了一种超声换能器及其制造方法。 超声波换能器包括：第一电极层，其设置成覆盖导电基底;内壁和通孔的顶部穿透膜，并且具有与膜的顶表面相同高度的顶表面; 第二电极层，设置在与第一电极层间隔开的导电基板的底表面上; 以及顶部电极，其设置在所述膜的顶表面上并与所述第一电极层的顶表面接触。
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