Abstract:
A display device, including a first substrate and a second substrate facing each other and integrally attached to each other by a sealant; a display unit on one surface of the first substrate facing the second substrate; a reflective film on one surface of the second substrate facing the first substrate, the reflective film including a first region inside the sealant, a second region overlapping the sealant, and a third region outside the sealant; and a passivation layer covering at least the third region of the reflective film.
Abstract:
A display device includes a reflecting layer. A display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate facing the lower substrate; a thin film transistor on the lower substrate; and a first reflecting layer on a first surface of the upper substrate, the first surface facing the lower substrate, in which the lower substrate and the upper substrate include a display area for displaying an image, and a peripheral area outside the display area, and wherein the first reflecting layer is at the peripheral area, at display area, and at an area adjacent an edge of the upper substrate.
Abstract:
A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.
Abstract:
A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.
Abstract:
An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
Abstract:
A display device includes a substrate; a display area and a non-display area on the substrate, where a plurality of pixels is disposed in the display area, and where the non-display area is in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.
Abstract:
A unit pixel includes a circuit structure, first and second wiring patterns, an interlayer insulating layer, a planarization layer, and a light emission structure. The first wiring pattern disposed on the circuit structure has a first bump structure. The interlayer insulating layer covers the circuit structure and the first wiring pattern. The second wiring pattern disposed on the interlayer insulating layer overlaps the first wiring pattern and has a second bump structure. The planarization layer covers the interlayer insulating layer and the second wiring pattern and includes a via-hole exposing at least a portion of the second wiring pattern. The light emission structure contacts the second wiring pattern through the via-hole. The first and second wiring patterns and the interlayer insulating layer form a capacitor, the light emission structure includes an OLED, and the capacitor is directly connected to an anode of the OLED.
Abstract:
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate including a display area in which an OLED is formed and a non-display area surrounding the display area. The OLED display also includes a pixel defining layer formed over the substrate and having an opening defining an emission area of the OLED, a first passivation layer covering a portion of the pixel defining layer formed in the non-display area and a second passivation layer formed in the non-display area, wherein a portion of the second passivation layer does not overlap the first passivation layer in the depth dimension of the OLED display. The OLED display further includes an encapsulation substrate formed to be opposite to the substrate and a filler filling a space between the substrate and the encapsulation substrate and contacting the first and second passivation layers.
Abstract:
A display device includes a display panel including a bendable display panel including a substrate and a plurality of pad portions on the substrate. The substrate includes a cutout between adjacent pad portions of the plurality of pad portions.
Abstract:
A color mirror substrate may include a transparent substrate, a plurality of wavelength conversion patterns arranged on the transparent substrate, and a plurality of mirror patterns, ones of the mirror patterns stacked on respective ones of the wavelength conversion patterns. Each wavelength conversion pattern may include a wavelength conversion particle with a quantum dot. In the color mirror display device, a mirror property having a desired color may be implemented. For example, a gold mirror or a black mirror may be implemented by using various types of quantum dots.