Abstract:
A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.
Abstract:
A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
Abstract:
A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
Abstract:
A display device includes a plurality of pixels. Each pixel includes a first transistor including a first gate electrode, a first source region, and a first drain region, a second transistor connected to the first source region of the first transistor, a third transistor connected to the first gate electrode and the first drain region of the first transistor, a fifth transistor connected to the first source region of the first transistor, and a sixth transistor connected to the first drain region of the first transistor. The pixels include a first pixel and a second pixel disposed adjacent to each other. The first and second pixels share a fourth transistor connected to the third transistor of the first pixel and the third transistor of the second pixel, and share a seventh transistor connected to the sixth transistor of the first pixel and the sixth transistor of the second pixel.
Abstract:
A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.
Abstract:
An organic light emitting diode (OLED) display includes a scan line, a data line, a driving voltage line, a switching transistor, a driving transistor and an OLED. The scan line is formed on a substrate to transmit a scan signal. The data line and the driving voltage line, intersecting the scan line, transmit a data signal and a driving voltage, respectively. The switching transistor, electrically coupled to the scan line and the data line, includes a switching semiconductor layer, a switching gate electrode, and a gate insulating layer having a first thickness. The driving transistor, electrically coupled to the switching drain electrode, includes a driving semiconductor layer, a driving gate electrode and a gate insulating layer having a second thickness. The OLED is electrically coupled to the driving drain electrode. The data line and the driving voltage line are formed with different layers from each other.
Abstract:
An organic light emitting display device includes an (i−1)th pixel, an i-th pixel, and an (i+1)th pixel, each including an organic light emitting diode and a driving transistor to control a driving current flowing through the organic light emitting diode. A first node of the i-th pixel, to which a control electrode of the driving transistor of the i-th pixel is connected, is initialized to an initialization voltage in synchronization with an (i−1)th scan signal applied to the i-th pixel, and an anode of the organic light emitting diode of the i-th pixel is initialized to the initialization voltage in synchronization with an i-th scan signal applied to the (i+1)th pixel.
Abstract:
A display includes a switching transistor connected to a scan line and data line, a driving transistor connected to the switching transistor, a storage capacitor between a voltage line and the driving transistor, and an organic light emitting diode connected to the driving transistor. The data line and voltage line are at different layers, and the data line and a gate electrode of the driving transistor are at different layers. Also, a plate of the storage capacitor and the gate electrode of the driving transistor are of a same layer, and semiconductor layers of the switching and driving transistors are of a same layer.
Abstract:
An organic light emitting display device includes a substrate, an active layer on the substrate, a first insulating layer on the substrate and the active layer, a gate electrode on the first insulating layer, a second insulating layer on and patterned to expose the first insulating layer, a source and a drain electrode on the second insulating layer and in contact with the active layer via contact holes in the second and the first insulating layers, a first electrode on the first insulating layer such that the first electrode is in contact with the source or the drain electrode, and including a transparent conductive layer and a transflective conductive layer, a third insulating layer on the second insulating layer, and patterned to expose the first electrode, an organic thin film layer on the exposed first electrode, and a second electrode on the organic thin film layer.
Abstract:
An organic light emitting diodes display includes: a switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor, wherein the driving thin film transistor includes a driving semiconductor layer section, a first gate insulating layer covering the driving semiconductor layer section, a floating gate electrode disposed on the first gate insulating layer, a second gate insulating layer covering the floating gate electrode, and a driving gate electrode disposed on the second gate insulating layer and at a position corresponding to the floating gate electrode, wherein the second gate insulating layer has a permittivity in the range of about 10 to about 100.