Organic light-emitting display apparatus

    公开(公告)号:US10818229B2

    公开(公告)日:2020-10-27

    申请号:US16377627

    申请日:2019-04-08

    Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.

    Organic light-emitting display apparatus

    公开(公告)号:US10255853B2

    公开(公告)日:2019-04-09

    申请号:US15693762

    申请日:2017-09-01

    Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.

    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME
    4.
    发明申请
    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
    薄膜晶体管阵列基底和有机发光显示装置

    公开(公告)号:US20160190221A1

    公开(公告)日:2016-06-30

    申请号:US14714557

    申请日:2015-05-18

    Abstract: A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a switching semiconductor layer including a switching channel region, a switching source region, and a switching drain region; and a switching source electrode and a switching drain electrode contacting the switching semiconductor layer. The switching source electrode includes a source contact portion contacting the switching source region, and the switching drain electrode includes a drain contact portion contacting the switching drain region. The source contact portion is doped with ions that are different from ions of the switching source region and the drain contact portion is doped with ions that are different from ions of the switching drain region.

    Abstract translation: 薄膜晶体管(TFT)阵列基板包括:设置在基板上的驱动TFT; 以及设置在基板上的开关TFT,包括:开关半导体层,包括开关沟道区,开关源区和开关漏极区; 以及与开关半导体层接触的开关源电极和开关漏电极。 开关源电极包括接触开关源极区域的源极接触部分,开关漏电极包括接触开关漏极区域的漏极接触部分。 源极接触部分掺杂有与开关源极区域的离子不同的离子,并且漏极接触部分掺杂有与开关漏极区域的离子不同的离子。

    THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME 有权
    薄膜晶体管阵列面板和有机发光显示装置,包括它们

    公开(公告)号:US20160111482A1

    公开(公告)日:2016-04-21

    申请号:US14713933

    申请日:2015-05-15

    Abstract: A thin film transistor (TFT) circuit panel comprises a substrate and first and second patterned multi-layer structures formed over the substrate. The first patterned multi-layer structure is to provide a driving TFT and a storage capacitor, and comprises: a semiconductor layer, a first electrode over the semiconductor layer, a second electrode disposed over the first electrode and insulated from the first electrode, a storage insulating layer disposed between the first electrode and the second electrode, and a driving gate insulating layer disposed between the semiconductor layer and the first electrode. The second patterned multi-layer structure is spaced from the first multi-layer structure, and comprises: a lower patterned insulating layer, a patterned conductive layer and a top patterned insulating layer. An organic insulating material is filled between the first and second patterned multi-layer structures.

    Abstract translation: 薄膜晶体管(TFT)电路板包括衬底和形成在衬底上的第一和第二图案化多层结构。 第一图案化多层结构是提供驱动TFT和存储电容器,并且包括:半导体层,半导体层上的第一电极,设置在第一电极上并与第一电极绝缘的第二电极, 设置在第一电极和第二电极之间的绝缘层,以及设置在半导体层和第一电极之间的驱动栅极绝缘层。 第二图案化多层结构与第一多层结构隔开,并且包括:下图案化绝缘层,图案化导电层和顶部图案化绝缘层。 有机绝缘材料填充在第一和第二图案化多层结构之间。

    Organic light-emitting display apparatus

    公开(公告)号:US11990092B2

    公开(公告)日:2024-05-21

    申请号:US18110971

    申请日:2023-02-17

    Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.

    Thin film transistor substrate and organic light-emitting diode display apparatus

    公开(公告)号:US10147352B2

    公开(公告)日:2018-12-04

    申请号:US15004472

    申请日:2016-01-22

    Abstract: An organic light-emitting diode (OLED) display apparatus is provided. The OLED display apparatus includes a substrate, an initialization voltage line, a first thin film transistor (TFT) including an active layer. The initialization voltage line transmits an initialization voltage. The first thin film transistor (TFT) includes an active layer, a gate electrode, and an auxiliary gate electrode. The active layer is disposed on the substrate and includes a source region, a channel region, and a drain region. The gate electrode is disposed on the channel region. The auxiliary gate electrode is disposed on the gate electrode on a boundary between the channel region and the drain region. The voltage application electrode is disposed on the auxiliary gate electrode and is connected to the initialization voltage line and the auxiliary gate electrode.

    Thin-film transistor array substrate and organic light-emitting diode display including the same

    公开(公告)号:US09911761B2

    公开(公告)日:2018-03-06

    申请号:US14814341

    申请日:2015-07-30

    CPC classification number: H01L27/1248 H01L27/1255 H01L27/3262 H01L27/3265

    Abstract: A thin-film transistor (TFT) array substrate and organic light-emitting diode (OLED) display are disclosed. In one aspect, the TFT array substrate includes a driving TFT including a driving gate electrode, a switching TFT including a switching gate electrode and spaced apart from the driving TFT, and a storage capacitor including a first electrode electrically connected to the driving gate electrode and a second electrode formed over and insulated from the first electrode. The TFT array substrate also includes a capacitor insulating film formed between the first and second electrodes and an interlayer insulating film covering at least part of the driving TFT, at least part of the switching TFTs, and the capacitor insulating film, wherein the switching gate electrode and the second electrode are formed of the same material.

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