公开(公告)号：US20150171153A1

公开(公告)日：2015-06-18

申请号：US14535039

申请日：2014-11-06

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-Won Yoon ,  Seung-Min Lee ,  Il-Jeong Lee ,  Jeong-Ho Lee ,  Choong-Youl Im ,  Su-Yeon Sim

IPC: H01L27/32 ,  H01L51/52 ,  H01L27/12

CPC classification number: H01L51/5215 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/5265 ,  H01L2227/323

Abstract: An organic light emitting display device includes a substrate, an active layer on the substrate, a first insulating layer on the substrate and the active layer, a gate electrode on the first insulating layer, a second insulating layer on and patterned to expose the first insulating layer, a source and a drain electrode on the second insulating layer and in contact with the active layer via contact holes in the second and the first insulating layers, a first electrode on the first insulating layer such that the first electrode is in contact with the source or the drain electrode, and including a transparent conductive layer and a transflective conductive layer, a third insulating layer on the second insulating layer, and patterned to expose the first electrode, an organic thin film layer on the exposed first electrode, and a second electrode on the organic thin film layer.

Abstract translation: 有机发光显示装置包括基板，基板上的有源层，基板上的第一绝缘层和有源层，第一绝缘层上的栅电极，第二绝缘层和图案上的第一绝缘层 层，源极和漏极，并且通过第二绝缘层和第一绝缘层中的接触孔与有源层接触;第一绝缘层上的第一电极，使得第一电极与第二绝缘层接触， 源极或漏极，并且包括透明导电层和透反射导电层，第二绝缘层上的第三绝缘层，并且被图案化以暴露第一电极，暴露的第一电极上的有机薄膜层，以及第二绝缘层 电极在有机薄膜层上。

公开(公告)号：US20150102349A1

公开(公告)日：2015-04-16

申请号：US14242672

申请日：2014-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Wang-Woo Lee ,  Moo-Soon Ko ,  Do-Hyung Kim ,  Min-Woo Woo ,  Il-Jeong Lee ,  Jeong-Ho Lee ,  Young-Woo Park

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1251 ,  H01L27/1288

Abstract: A thin film transistor array substrate including a first TFT including a first active layer, a gate electrode, a first source electrode and a first drain electrode, a second TFT including a second active layer, a floating gate electrode, a control gate electrode, a second source electrode, and a second drain electrode, a capacitor including a first electrode and a second electrode, and a capping layer contacting a portion of the first electrode, the capping layer and the second electrode being on a same layer, is disclosed. A method of manufacturing thin film transistor array substrate is also disclosed.

Abstract translation: 一种薄膜晶体管阵列基板，包括包括第一有源层，栅电极，第一源电极和第一漏电极的第一TFT，包括第二有源层的第二TFT，浮栅电极，控制栅电极， 第二源电极和第二漏电极，包括第一电极和第二电极的电容器，以及与第一电极，封盖层和第二电极的一部分在同一层上接触的覆盖层。 还公开了制造薄膜晶体管阵列基板的方法。

公开(公告)号：US20150048320A1

公开(公告)日：2015-02-19

申请号：US14243694

申请日：2014-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jeong-Ho Lee ,  Su-Yeon Sim ,  Ju-Won Yoon ,  Seung-Min Lee ,  Wang-Woo Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Choong-Youl Im

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1237 ,  H01L27/1288

Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Abstract translation: 公开了制造薄膜晶体管（TFT）阵列基板的方法。 一方面，该方法包括在衬底上形成有源层，在衬底上形成第一绝缘层以覆盖有源层，以及在与有源层对应的区域中的第一绝缘层上形成第一栅电极，掺杂 所述有源层具有离子杂质，在所述第一绝缘层上形成第二绝缘层以覆盖所述第一栅电极，对所述有源层执行退火处理，在所述第二绝缘层上形成电容器的下电极，形成第三绝缘层 在第二绝缘层上覆盖下电极，其中第三绝缘层的介电常数大于第一和第二绝缘层的介电常数，并且在第三绝缘层上形成电容器的上电极。

公开(公告)号：US09245908B2

公开(公告)日：2016-01-26

申请号：US14243694

申请日：2014-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jeong-Ho Lee ,  Su-Yeon Sim ,  Ju-Won Yoon ,  Seung-Min Lee ,  Wang-Woo Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Choong-Youl Im

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1255 ,  H01L27/1237 ,  H01L27/1288

Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Abstract translation: 公开了制造薄膜晶体管（TFT）阵列基板的方法。 一方面，该方法包括在衬底上形成有源层，在衬底上形成第一绝缘层以覆盖有源层，以及在与有源层对应的区域中的第一绝缘层上形成第一栅电极，掺杂 所述有源层具有离子杂质，在所述第一绝缘层上形成第二绝缘层以覆盖所述第一栅电极，对所述有源层执行退火处理，在所述第二绝缘层上形成电容器的下电极，形成第三绝缘层 在第二绝缘层上覆盖下电极，其中第三绝缘层的介电常数大于第一和第二绝缘层的介电常数，并且在第三绝缘层上形成电容器的上电极。