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公开(公告)号：US09741827B2
公开(公告)日：2017-08-22
申请号：US14508858
申请日：2014-10-07
Applicant: Samsung Display Co., Ltd. , DONGWOO FINE-CHEM Co., Ltd.
Inventor： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-Il Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
CPC classification number: H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
Abstract: An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
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公开(公告)号：US09490275B2
公开(公告)日：2016-11-08
申请号：US14740484
申请日：2015-06-16
Applicant: Samsung Display Co., Ltd.
Inventor： Young Min Moon , Jong-Hyun Choung , Bong-Kyun Kim
CPC classification number: H01L29/42356 , H01L29/42384 , H01L29/4908 , H01L29/7869
Abstract: A thin film transistor array panel includes: a gate line on a substrate and including a gate electrode; a first gate insulating layer on the substrate and the gate line, the first gate insulting layer including a first portion adjacent to the gate line and a second portion overlapping the gate line and having a smaller thickness than that of the first portion; a second gate insulating layer on the first gate insulating layer; a semiconductor layer on the second gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a passivation layer on the second gate insulating layer, the source electrode and the drain electrode; and a pixel electrode on the passivation layer and connected with the drain electrode. The first gate insulating layer and the second gate insulating layer have stress in opposite directions from each other.
Abstract translation: 薄膜晶体管阵列面板包括：基板上的栅极线，并包括栅电极; 所述第一栅极绝缘层在所述基板和所述栅极线上，所述第一栅极绝缘层包括与所述栅极线相邻的第一部分和与所述栅极线重叠并且具有比所述第一部分的厚度小的第二部分; 第一栅极绝缘层上的第二栅极绝缘层; 在所述第二栅极绝缘层上的半导体层; 在半导体层上彼此隔开的源电极和漏电极; 第二栅极绝缘层上的钝化层，源电极和漏电极; 以及钝化层上的像素电极并与漏电极连接。 第一栅极绝缘层和第二栅极绝缘层在彼此相反的方向上具有应力。
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公开(公告)号：US20160093743A1
公开(公告)日：2016-03-31
申请号：US14816767
申请日：2015-08-03
Applicant: Samsung Display Co., Ltd.
Inventor： Bong-Kyun KIM , Sang-Won Shin , Jong-Hyun Choung
IPC: H01L29/786 , H01L29/24 , H01L29/45 , H01L27/12 , H01L29/423 , H01L21/445 , H01L21/4763 , H01L29/66 , H01L29/417
CPC classification number: H01L29/7869 , H01L21/445 , H01L27/124 , H01L27/1259 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/66969
Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer partially overlapping the gate electrode, the semiconductor layer including an oxide semiconductor material; a source electrode and a drain electrode disposed on the semiconductor layer, the source electrode and the drain electrode including a barrier layer, a main wiring layer disposed on the barrier layer, and a first capping layer disposed on the main wiring layer and being spaced apart from each other; and second capping layers covering lateral surfaces of the main wiring layers of the source and drain electrodes.
Abstract translation: 薄膜晶体管基板包括设置在基板上的栅电极; 与所述栅电极部分重叠的半导体层，所述半导体层包括氧化物半导体材料; 设置在所述半导体层上的源电极和漏电极，所述源电极和所述漏极包括阻挡层，设置在所述阻挡层上的主布线层以及设置在所述主布线层上并且间隔开的第一覆盖层 从彼此; 以及覆盖源电极和漏电极的主配线层的侧表面的第二覆盖层。
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14.发明申请公开(公告)号：US20150307779A1
公开(公告)日：2015-10-29
申请号：US14508858
申请日：2014-10-07
Applicant: Samsung Display Co., Ltd. , DONGWOO FINE-CHEM Co., Ltd.
Inventor： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-ll Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC: C09K13/08 , H01L29/66 , H01L21/306 , H01L27/12
CPC classification number: H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
Abstract: An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
Abstract translation: 提供了包含0.5至20重量％的过硫酸盐的蚀刻剂组合物; 0.01〜2重量％的氟化合物; 1〜10重量％的无机酸; 0.5〜5重量％的含氮（氮原子）的杂环化合物; 0.1至5重量％的氯化物; 0.05〜3重量％的铜盐; 有机酸或0.1〜10重量％的有机酸盐; 电子给体化合物为0.1〜5重量％ 和残留量的溶剂。 还提供了使用该显示装置制造显示装置的方法。
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公开(公告)号：US20210327927A1
公开(公告)日：2021-10-21
申请号：US17074947
申请日：2020-10-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： YONG-HWAN RYU , Woo Jin Cho , Jong-Hyun Choung , Jae Uoon Kim , Sun-Jin Song , Hyun Duck Cho
Abstract: A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.
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Patent Agency Ranking
公开(公告)号：US09443881B2
公开(公告)日：2016-09-13
申请号：US14518278
申请日：2014-10-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jean-Ho Song , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC: H01L29/04 , H01L27/12 , H01L29/423 , H01L29/45 , H01L29/786
CPC classification number: H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract translation: 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
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17.发明授权Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant 有权使用蚀刻剂制造金属布线和薄膜晶体管基板的蚀刻剂组成和方法公开(公告)号：US09293565B2
公开(公告)日：2016-03-22
申请号：US14100124
申请日：2013-12-09
Applicant: Samsung Display Co., Ltd. , DONGWOO FINE-CHEM Co., Ltd.
Inventor： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC: H01L29/66 , C09K13/08 , H01L21/3213 , C23F1/02 , C23F1/18 , C23F1/26 , H01L29/45 , H01L29/49 , H01L27/32
CPC classification number: H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
Abstract: An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
Abstract translation: 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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18.发明授权Etchant composition and method of forming metal wire and thin film transistor array panel using the same 有权蚀刻剂组成和形成金属线和薄膜晶体管阵列面板的方法使用相同公开(公告)号：US09045833B2
公开(公告)日：2015-06-02
申请号：US13718557
申请日：2012-12-18
Applicant: SAMSUNG DISPLAY CO., LTD. , DONGWOO FINE-CHEM CO., LTD.
Inventor： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
CPC classification number: C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
Abstract: A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
Abstract translation: 一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％ 无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或 其盐，剩余的水。 蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。
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公开(公告)号：US20150053984A1
公开(公告)日：2015-02-26
申请号：US14518278
申请日：2014-10-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： JEAN-HO SONG , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC: H01L27/12 , H01L29/45 , H01L29/423 , H01L29/786
CPC classification number: H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract translation: 薄膜晶体管阵列面板包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线和漏极，钝化层 覆盖数据线和漏电极，并且具有露出漏电极的一部分的接触孔，以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层，下层比上层宽，下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
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公开(公告)号：US08889032B2
公开(公告)日：2014-11-18
申请号：US13728463
申请日：2012-12-27
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Hyun Choung , In-Bae Kim , Seon-II Kim , Hong Sick Park , Jae Woo Jeong , Gyu-Po Kim , Won-Guk Seo , Hyun-Cheol Shin , Ki-Beom Lee , Sam-Young Cho , Seung-Yeon Han
CPC classification number: C23F1/18 , C23F1/26 , H01L21/4814
Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.
Abstract translation: 包括过硫酸盐，磺酸盐，氟化合物，唑类化合物，有机酸，硝酸盐和氯化合物的金属线蚀刻剂及其制备方法。
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