公开(公告)号：US20240177764A1

公开(公告)日：2024-05-30

申请号：US18223783

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Chang Jeon ,  Woohyun Kang ,  Seungkyung Ro ,  Sangkwon Moon ,  Heewon Lee

IPC: G11C11/408 ,  G06F3/06

CPC classification number: G11C11/4085 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G11C11/4087

Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

公开(公告)号：US11276474B2

公开(公告)日：2022-03-15

申请号：US17113451

申请日：2020-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Sangkwon Moon

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/34 ,  G11C16/16

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.

公开(公告)号：US10671524B2

公开(公告)日：2020-06-02

申请号：US16173390

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

IPC: G06F12/02 ,  G06F3/06

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US10042754B2

公开(公告)日：2018-08-07

申请号：US14302696

申请日：2014-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Kyung Ho Kim ,  Seunguk Shin ,  Sung Won Jung

IPC: G06F12/02

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

公开(公告)号：US09837167B2

公开(公告)日：2017-12-05

申请号：US15227945

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Sejeong Jang ,  Heewon Lee

IPC: G11C16/06 ,  G11C16/34 ,  G06F11/07 ,  G11C29/02 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/04 ,  G11C29/42 ,  G11C16/08 ,  G06F11/00 ,  G11C16/12

CPC classification number: G11C16/3495 ,  G06F11/008 ,  G06F11/073 ,  G06F11/0754 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/26 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42

Abstract: A method for operating a storage device including a flash memory, comprising: determining a data reliability level of the flash memory; comparing the data reliability level with a threshold; and changing an operating condition of the flash memory to improve the data reliability level of the flash memory when the data reliability level of the flash memory is lower than the threshold.

公开(公告)号：US09804801B2

公开(公告)日：2017-10-31

申请号：US14667242

申请日：2015-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Jin-Soo Kim ,  Young-Sik Lee ,  Jinkyu Jeong ,  Kyung Ho Kim

IPC: G06F12/00 ,  G06F13/00 ,  G06F3/06

CPC classification number: G06F3/068 ,  G06F3/0611 ,  G06F3/065 ,  G06F3/0656 ,  G06F2003/0691

Abstract: A method of processing data in a memory system including a control unit and a hybrid memory device having a first memory and a second memory, includes; receiving first write data, storing the first write data in the first memory and assigning a first group state from among a plurality of group states to the stored first write data in response to first attribution information, completing a data processing operation in the memory system directed to the stored first write data that changes the attribution information associated with the stored first write data by monitoring of the first attribution information using an operating system running on the memory controller, and changing the first group state assigned to the stored first write data to a second group state from among the plurality of group states, the second group state having a different priority than a priority for the first group state.

公开(公告)号：US09477589B2

公开(公告)日：2016-10-25

申请号：US14489676

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Ji Hong Kim ,  Ji Sung Park ,  Hyunchul Park ,  Kyung Ho Kim

IPC: G06F12/00 ,  G06F12/02 ,  G06F3/06 ,  G06F17/30

CPC classification number: G06F12/0238 ,  G06F3/06 ,  G06F17/30156 ,  G06F17/30191 ,  G06F17/3033

Abstract: A storage device is provided which includes a nonvolatile memory device configured to store a plurality of reference data, a memory configured to store a hash manage table used to manage a plurality of reference hash keys of each of the plurality of reference data, a hash key generator configured to generate a plurality of hash keys based on write requested data, and a memory controller configured to compare the plurality of hash keys and reference hash keys of each reference data to determine whether to store the write requested data in the nonvolatile memory device. The memory controller selects one of the plurality of reference data according to a similarity between the plurality of hash keys and the plurality of reference hash keys of each reference data and stores the write requested data and the selected reference data in the nonvolatile memory device to refer to each other.

Abstract translation: 提供一种存储装置，其包括被配置为存储多个参考数据的非易失性存储装置，被配置为存储用于管理多个参考数据中的每一个的多个参考散列密钥的散列管理表的存储器，散列密钥 生成器，其被配置为基于写入请求的数据生成多个散列密钥;以及存储器控制器，被配置为比较每个参考数据的多个散列密钥和参考散列密钥，以确定是否将写入请求的数据存储在非易失性存储器件中。 存储器控制器根据多个散列键和每个参考数据的多个参考散列键之间的相似度来选择多个参考数据中的一个，并将写入请求的数据和所选择的参考数据存储在非易失性存储器件中以引用 对彼此。

公开(公告)号：US20140372678A1

公开(公告)日：2014-12-18

申请号：US14302696

申请日：2014-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon Moon ,  Kyung Ho Kim ,  Seunguk Shin ,  Sung Won Jung

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7207 ,  Y02D10/13

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

Abstract translation: 包括在用户装置中的非易失性存储装置的访问方法包括：接收写入请求以将数据写入非易失性存储装置; 检测发出写请求的应用，用户上下文，写缓冲器的队列大小，写请求数据的属性或用户设备的操作模式; 以及根据检测到的信息，确定用于将写入请求的数据写入非易失性存储器件的多个写入模式之一。 写入模式具有不同的编程电压并验证电压组。