公开(公告)号：US20250094051A1

公开(公告)日：2025-03-20

申请号：US18592065

申请日：2024-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeonghui KIM ,  Seongho Roh ,  Hyeongyu Min ,  Jisoo Kim ,  Hyunkyo Oh ,  Han Kyoo Lee ,  Kibeen Jung

IPC: G06F3/06

Abstract: A storage device includes: at least one nonvolatile memory device configured to store or read data; and at least one controller configured to: control the at least one nonvolatile memory device, perform at least one workload of a plurality of workloads, based on at least one parameter, perform a tuning for improvement of a performance and a Quality-of-Service (QOS) conformity with a first storage device associated with the workload, and wherein the at least one controller is further configured to individually perform the tuning for each of the plurality of workloads that are different kinds.

公开(公告)号：US12236126B2

公开(公告)日：2025-02-25

申请号：US18127922

申请日：2023-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibeen Jung ,  Han Kyoo Lee ,  Byeonghui Kim ,  Hyunkyo Oh ,  Sungmin Jang

IPC: G06F3/06 ,  G06N20/00

Abstract: A throttling method for a storage device is provided. The throttling method includes: receiving a write command from a host; identifying, using a first machine learning model, a throttling delay time; transmitting a completion message to the host according to the throttling delay time; collecting weights of the first machine learning model and performance information of the storage device corresponding to the weights; learning the weights and the performance information to generate an objective function indicating a relationship between the weights and the performance information using a second machine learning model of a weight learning device; selecting a weight corresponding to a maximum performance using the objective function; and updating the first machine learning model with the weight.

公开(公告)号：US12182419B2

公开(公告)日：2024-12-31

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F11/00 ,  G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11817170B2

公开(公告)日：2023-11-14

申请号：US17723959

申请日：2022-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C29/00 ,  G11C29/50

CPC classification number: G11C29/50004 ,  G11C2029/5004

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

公开(公告)号：US11276474B2

公开(公告)日：2022-03-15

申请号：US17113451

申请日：2020-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Sangkwon Moon

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/34 ,  G11C16/16

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.

公开(公告)号：US12300335B2

公开(公告)日：2025-05-13

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna Kim ,  Woohyun Kang ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G11C16/34 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US12300325B2

公开(公告)日：2025-05-13

申请号：US18170893

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Jin-Young Kim ,  Hyuna Kim ,  Se Hwan Park ,  Youngdeok Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C16/12 ,  G06F11/10 ,  G11C16/26

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

公开(公告)号：US20250123943A1

公开(公告)日：2025-04-17

申请号：US18909171

申请日：2024-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong Oh ,  Byeonghui Kim ,  Seongho Roh ,  Hyeongyu Min ,  Hyunkyo Oh ,  Dongchan Lee ,  Hankyoo Lee ,  Kibeen Jung

IPC: G06F11/34

Abstract: Provided are a method and apparatus for optimizing prefetch performance of a storage device. The method of optimizing prefetch performance of a storage device includes receiving prefetch data from the storage device configured to process a workload based on a parameter, generating prefetch performance data for a plurality of combinations of block size and queue depth, based on the prefetch data, generating index data for evaluating the prefetch performance data, based on the prefetch performance data, updating the parameter to generate an updated parameter based on the index data, and transferring, to the storage device, the updated parameter, wherein the generating of the index data includes generating the index data by taking into account an inversion interval in which prefetch performance decreases with an increase in the block size or the queue depth.

公开(公告)号：US11928338B2

公开(公告)日：2024-03-12

申请号：US17393643

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Sanghyun Choi ,  Kangho Roh

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2212/7211

Abstract: A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

公开(公告)号：US20240078018A1

公开(公告)日：2024-03-07

申请号：US18127133

申请日：2023-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Lee ,  Woohyun Kang ,  Youngjoo Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim ,  Jin Gu Jeong

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing a first request indicating a word line sequential read operation of a target memory block of the non-volatile memory device, providing first word line read data corresponding to memory cells of a first word line of the target memory block based on the first request, providing second word line read data corresponding to memory cells of a second word line of the target memory block based on the first request, the second word line being adjacent to the first word line, calculating a first word line gap value based on the first word line read data and the second word line read data, and performing a first reliability operation of the target memory block based on the first word line gap value.