公开(公告)号：US12300335B2

公开(公告)日：2025-05-13

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna Kim ,  Woohyun Kang ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G11C16/34 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US12300325B2

公开(公告)日：2025-05-13

申请号：US18170893

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Jin-Young Kim ,  Hyuna Kim ,  Se Hwan Park ,  Youngdeok Seo ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C16/12 ,  G06F11/10 ,  G11C16/26

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

公开(公告)号：US11941293B2

公开(公告)日：2024-03-26

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Hyuna Kim ,  Minkyu Kim ,  Donghoo Lim ,  Sanghyun Choi

IPC: G06F3/06 ,  G06F11/10 ,  G06F13/28 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C11/56

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G06F11/1068 ,  G06F13/28 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C11/5671

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

公开(公告)号：US12182419B2

公开(公告)日：2024-12-31

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F11/00 ,  G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11817170B2

公开(公告)日：2023-11-14

申请号：US17723959

申请日：2022-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Heewon Lee ,  Donghoo Lim

IPC: G11C29/00 ,  G11C29/50

CPC classification number: G11C29/50004 ,  G11C2029/5004

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.

公开(公告)号：US20250094062A1

公开(公告)日：2025-03-20

申请号：US18968373

申请日：2024-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11934701B2

公开(公告)日：2024-03-19

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G06F3/06 ,  G11C7/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1051

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20240012569A1

公开(公告)日：2024-01-11

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.