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公开(公告)号:US20210257305A1
公开(公告)日:2021-08-19
申请号:US17024852
申请日:2020-09-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Choongbin Yim , Jungwoo Kim , Jihwang Kim , Jungsoo Byun , Jongbo SHIM , Doohwan Lee , Kyoungsei Choi , Junggon Choi , Sungeun Pyo
IPC: H01L23/538 , H01L25/10
Abstract: A semiconductor package includes: a redistribution layer including a plurality of redistribution insulating layers, a plurality of redistribution line patterns that constitute lower wiring layers, and a plurality of redistribution vias that are connected to some of the plurality of redistribution line patterns while penetrating at least one of the plurality of redistribution insulating layers; at least one semiconductor chip arranged on the redistribution layer; an expanded layer surrounding the at least one semiconductor chip on the redistribution layer; and a cover wiring layer including at least one base insulating layer, a plurality of wiring patterns that constitute upper wiring layers, and a plurality of conductive vias that are connected to some of the plurality of wiring patterns while penetrating the at least one base insulating layer.
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公开(公告)号:US20230223353A1
公开(公告)日:2023-07-13
申请号:US17976775
申请日:2022-10-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jingu Kim , Taesung Jeong , Doohwan Lee
IPC: H01L23/552 , H01L23/498 , H01L23/31 , H01L25/10 , H01L23/538
CPC classification number: H01L23/552 , H01L23/3121 , H01L23/5385 , H01L23/49811 , H01L23/49822 , H01L25/105 , H01L24/16 , H01L2224/16227
Abstract: A semiconductor package includes: a first redistribution layer including a first wiring; a die located on the first redistribution layer; and a shielding structure surrounding the die from an upper surface and side surfaces of the die, wherein the shielding structure includes: a shielding wall that is spaced apart from the side surfaces of the die and surrounds the side surfaces of the die; and a shielding cover that is spaced apart from the upper surface of the die and surrounds the upper surface of the die.
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公开(公告)号:US11355445B2
公开(公告)日:2022-06-07
申请号:US17007945
申请日:2020-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonsung Kim , Doohwan Lee , Taeho Ko , Bongsoo Kim , Seokbong Park
IPC: H01L23/538 , H01L23/31 , H01L23/66 , H01L23/00 , H01L25/065 , H01L25/10 , H01L21/683 , H01L21/48 , H01L21/56 , H01P3/08 , H01P11/00 , H01L23/29
Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.
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公开(公告)号:US11302572B2
公开(公告)日:2022-04-12
申请号:US16983298
申请日:2020-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dowan Kim , Doohwan Lee , Seunghwan Baek
IPC: H01L21/768 , H01L23/538 , H01L23/00 , H01L23/31
Abstract: A method of manufacturing a semiconductor package may include forming a first substrate including a redistribution layer, providing a second substrate including a semiconductor chip and an interconnection layer on the first substrate to connect the semiconductor chip to the redistribution layer, forming a first encapsulation layer covering the second substrate, and forming a via structure penetrating the first encapsulation layer. The forming the via structure may include forming a first via hole in the first encapsulation layer, forming a photosensitive material layer in the first via hole, exposing and developing the photosensitive material layer in the first via hole to form a second encapsulation layer having a second via hole, and filling the second via hole with a conductive material. A surface roughness of a sidewall of the first encapsulation layer may be greater than a surface roughness of a sidewall of the second encapsulation layer.
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公开(公告)号:US11942458B2
公开(公告)日:2024-03-26
申请号:US17511178
申请日:2021-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Doohwan Lee , Wonkyoung Choi , Jeongho Lee
IPC: H01L25/065 , H01L21/56 , H01L23/00 , H01L23/498 , H01L25/10
CPC classification number: H01L25/105 , H01L21/56 , H01L23/49816 , H01L24/16 , H01L24/20 , H01L24/73 , H01L25/0652 , H01L24/48 , H01L2224/023 , H01L2224/16146 , H01L2224/16235 , H01L2224/2101 , H01L2224/211 , H01L2224/48225 , H01L2224/73209 , H01L2225/06541 , H01L2225/06548 , H01L2225/06572 , H01L2924/181
Abstract: A semiconductor package includes a first substrate, a first semiconductor chip and a passive device which are laterally spaced apart from each other on the first substrate and are disposed face-up on the first substrate, a first molding part surrounding the first semiconductor chip and the passive device on the first substrate, a second semiconductor chip disposed on the first molding part and electrically connected to the first semiconductor chip and the passive device, a second molding part surrounding the second semiconductor chip on the first molding part, first through-electrodes vertically penetrating the first molding part, at least some of first through-electrodes electrically connect the first substrate to the second semiconductor chip, and external terminals provided under the first substrate.
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公开(公告)号:US11791230B2
公开(公告)日:2023-10-17
申请号:US17409281
申请日:2021-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonsung Kim , Doohwan Lee , Jinseon Park
IPC: H01L23/31 , H01L25/13 , H01L23/498 , H01L23/00 , H01L23/552 , H01L25/10 , H01L23/522 , H01L23/13
CPC classification number: H01L23/3128 , H01L23/13 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L24/08 , H01L2224/08235
Abstract: A method of manufacturing a fan-out semiconductor package includes forming a frame having a through-hole and including one or more wiring layers; forming a semiconductor chip in the through-hole of the frame; forming an encapsulant covering an upper surface of each of the frame and the semiconductor chip, and filling a space between a wall surface of the through-hole of the frame and a side surface of the semiconductor chip; forming a connection structure below each of the frame and the semiconductor chip; forming a first metal pattern layer on an upper surface of the encapsulant; forming an insulating material on the upper surface of the encapsulant and covering the first metal pattern layer; and forming a second metal pattern layer on the insulating material, a first metal via passing through the insulating material, and a second metal via passing through the insulating material and the encapsulant.
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公开(公告)号:US11735532B2
公开(公告)日:2023-08-22
申请号:US17664132
申请日:2022-05-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonsung Kim , Doohwan Lee , Taeho Ko , Bongsoo Kim , Seokbong Park
IPC: H01L23/538 , H01L23/31 , H01L23/66 , H01L23/00 , H01L25/065 , H01L25/10 , H01L21/683 , H01L21/48 , H01L21/56 , H01P3/08 , H01P11/00 , H01L23/29
CPC classification number: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/295 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L23/66 , H01L24/19 , H01L24/20 , H01L25/0657 , H01L25/105 , H01P3/081 , H01P11/003 , H01L2221/68372 , H01L2223/6627 , H01L2224/214 , H01L2225/0651 , H01L2225/06568 , H01L2225/06586 , H01L2225/1035 , H01L2225/1058 , H01L2924/19032 , H01L2924/19041 , H01L2924/19103
Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.
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公开(公告)号:US11581263B2
公开(公告)日:2023-02-14
申请号:US17024852
申请日:2020-09-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Choongbin Yim , Jungwoo Kim , Jihwang Kim , Jungsoo Byun , Jongbo Shim , Doohwan Lee , Kyoungsei Choi , Junggon Choi , Sungeun Pyo
IPC: H01L23/495 , H01L23/538 , H01L25/10
Abstract: A semiconductor package includes: a redistribution layer including a plurality of redistribution insulating layers, a plurality of redistribution line patterns that constitute lower wiring layers, and a plurality of redistribution vias that are connected to some of the plurality of redistribution line patterns while penetrating at least one of the plurality of redistribution insulating layers; at least one semiconductor chip arranged on the redistribution layer; an expanded layer surrounding the at least one semiconductor chip on the redistribution layer; and a cover wiring layer including at least one base insulating layer, a plurality of wiring patterns that constitute upper wiring layers, and a plurality of conductive vias that are connected to some of the plurality of wiring patterns while penetrating the at least one base insulating layer.
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公开(公告)号:US11342239B2
公开(公告)日:2022-05-24
申请号:US16672652
申请日:2019-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunghawn Bae , Doohwan Lee , Jooyoung Choi
IPC: H01L23/367 , H01L23/31 , H01L21/48 , H01L23/498 , H01L23/00 , H01L23/373
Abstract: The invention provides a semiconductor package, which may include a connection structure including one or more redistribution layers. A semiconductor chip is disposed on the connection structure and has an active surface on which a connection pad electrically connected to the redistribution layer is disposed and an inactive surface opposite to the active surface. An encapsulant is disposed on the connection structure and covers at least a portion of the inactive surface of the semiconductor chip. A conductor pattern layer is embedded in the encapsulant such that one exposed surface of the conductor pattern layer is exposed from the encapsulant. A metal layer is disposed on the encapsulant and covers the one exposed surface of the conductor pattern layer.
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公开(公告)号:US11158581B2
公开(公告)日:2021-10-26
申请号:US16679484
申请日:2019-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonsung Kim , Doohwan Lee
IPC: H01L23/538 , H01L23/498 , H01L23/31 , H01L23/13
Abstract: A semiconductor package may include: a frame having a cavity and including a wiring structure connecting first and second surfaces of the frame to each other; a first connection structure d on the second surface of the frame and including a first redistribution layer connected to the wiring structure; a semiconductor chip on the first connection structure within the cavity and having connection pads connected to the first redistribution layer; an encapsulant encapsulating the semiconductor chip, covering the first surface of the frame, and having an upper surface substantially coplanar with an upper surface of the wiring structure; and a second connection structure including an insulating layer disposed on the upper surfaces of the encapsulant and the wiring structure, a second redistribution layer on the insulating layer, and vias penetrating through the insulating layer and connecting the wiring structure and the second redistribution layer.
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