Abstract:
A monitoring device includes a masking invalid region setter that sets a masking invalid region in video of a monitoring area in accordance with a manipulation input of a user, a moving object detector that detects a moving object from the video of the monitoring area and acquires region information for each moving object, a process target selector that selects whether or not to set an image region of a moving object detected by the moving object detector as a target of the masking process in accordance with whether or not the image region is positioned in the masking invalid region, and a video output controller that generates and outputs an output video in which the masking process is implemented only on an image region of a moving object set as a target of the masking process by the process target selector.
Abstract:
A monitoring device according to an embodiment of the present invention controls a moving image processor and a moving image outputter according to the use purpose of a user, and outputs one of an original video and a mask processing image. A controller causes the moving image processor to perform a prescribed preprocessing according to a prescribed start event generated in advance of a use purpose input operation which is performed by the user.
Abstract:
A semiconductor device includes an N-type semiconductor substrate comprising silicon, an N-type low-concentration impurity layer that is in contact with the upper surface of the N-type semiconductor substrate, a metal layer that is in contact with the entire lower surface of the N-type semiconductor substrate and has a thickness of at least 20 μm, and first and second vertical MOS transistors formed in the low-concentration impurity layer. The ratio of the thickness of the metal layer to the thickness of a semiconductor layer containing the N-type semiconductor substrate and the low-concentration impurity layer is greater than 0.27. The semiconductor device further includes a support comprising a ceramic material and bonded to the entire lower surface of the metal layer only via a bonding layer.
Abstract:
A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.
Abstract:
A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.
Abstract:
A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors. The thickness of the backside electrode ranges from 25 to 35 μm, and the ratio of the thickness of the backside electrode to the thickness of a semiconductor layer including the semiconductor substrate and the low-concentration impurity layer is 0.32 or more.
Abstract:
A monitoring device is provided with a person image analyzer which has a person detector which detects a person from captured moving images and acquires positional information which relates to a person area, and an area state determinator which determines an area state which indicates the state of people in the person area based on the positional information, a mask image setter which sets the mask image which corresponds to the area state, and a moving image output controller which generates and outputs output moving images where the person area is changed to the mask image which corresponds to the area state based on the positional information and the area state which are output from the person image analyzer.
Abstract:
A person counting device according to embodiments of the present invention counts the number of persons passing through a doorway based on an imaged image in which the surroundings of the doorway are imaged. The person counting device includes a moving line acquirer that acquires a moving line for each person detected from the imaged image, a person counter that counts the persons that have passed through the doorway based on the moving line, and a display information generator that generates display information which represents the number of persons that have passed through the doorway based on the counting results of the person counter. The person counter detects an interruption of the moving line in the vicinity of the doorway, determines a similarity between the background image of the doorway and the person image, and includes a deemed counter that deems that the person has passed through the doorway.