公开(公告)号：US10741545B2

公开(公告)日：2020-08-11

申请号：US16591559

申请日：2019-10-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masaki Tamaru ,  Kazuma Yoshida ,  Michiya Otsuji ,  Tetsuyuki Fukushima

IPC: H01L29/78 ,  H01L27/02 ,  H01L23/522 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/866

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.

公开(公告)号：US12200383B2

公开(公告)日：2025-01-14

申请号：US18098451

申请日：2023-01-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masaki Tamaru ,  Shigetaka Kasuga ,  Shinzo Koyama

IPC: H04N25/771 ,  H04N25/50 ,  H04N25/78

Abstract: A solid-state imaging apparatus includes a plurality of pixel circuits arranged in a matrix. Each pixel circuit includes: a photodiode; a first charge storage that stores a charge; a floating diffusion region that stores a charge; a second charge storage that stores a charge; a first transfer transistor that transfers a charge from the photodiode to the first charge storage; a second transfer transistor that transfers a charge from the first charge storage to the floating diffusion region; a first reset transistor that resets the floating diffusion region; and an accumulating transistor for accumulating a charge of the floating diffusion region in the second charge storage. The capacitance of the first charge storage is greater than the capacitance of the floating diffusion region, and the capacitance of the second charge storage is greater than the capacitance of the floating diffusion region.