公开(公告)号：US09818835B2

公开(公告)日：2017-11-14

申请号：US15234775

申请日：2016-08-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US10312339B2

公开(公告)日：2019-06-04

申请号：US15728141

申请日：2017-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US10741545B2

公开(公告)日：2020-08-11

申请号：US16591559

申请日：2019-10-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masaki Tamaru ,  Kazuma Yoshida ,  Michiya Otsuji ,  Tetsuyuki Fukushima

IPC: H01L29/78 ,  H01L27/02 ,  H01L23/522 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/866

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.