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11.发明授权InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译： 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。
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12.发明授权
公开(公告)号：US5892784A
公开(公告)日：1999-04-06
申请号：US330033
申请日：1994-10-27
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： The present invention provides a n-drive surface emitting laser comprised of an active region, a first mirror region having a first conductivity type, a second mirror region having a second opposite conductivity type, the first and second mirror regions being located on opposite sides of the light generation region, a buffer region having a second conductivity type, and a substrate having a first conductivity type. In the preferred embodiment the first conductivity type is n-type, thus the present invention provides a method of forming an n-drive semiconductor laser on an n-type substrate. Contact is made to the p-type mirror region via a tunnel junction formed by degeneratively doping the areas of the substrate region and the buffer region which abut each other. The tunnel junction is reverse biased so that current is injected through the degeneratively doped p-n junction formed by the n+ substrate and the p-type conducting layer.
摘要翻译： 本发明提供一种n驱动面发射激光器，其包括有源区，具有第一导电类型的第一镜区，具有第二相反导电类型的第二镜区，第一和第二镜区位于 光产生区域，具有第二导电类型的缓冲区域和具有第一导电类型的衬底。 在优选实施例中，第一导电类型是n型，因此本发明提供了在n型衬底上形成n驱动半导体激光器的方法。 通过将衬底区域和相邻的缓冲区的区域进行退化掺杂形成的隧道结对p型反射镜区域进行接触。 隧道结被反向偏置，使得电流通过由n +衬底和p型导电层形成的退化掺杂的p-n结注入。
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13.发明授权Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface 失效在注入表面上使用离子注入和外延生长制造原子元素掺杂半导体注入激光器的方法
公开(公告)号：US5045498A
公开(公告)日：1991-09-03
申请号：US565532
申请日：1990-08-10
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
CPC分类号： H01S5/305 , H01S5/3068 , Y10S148/095
摘要： A semiconductor laser diode includes a first buffer layer, a second buffer layer and an active layer sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant ions are such that energy transfer between the unimplanted material in the active layer and the dopant ions implanted causes lasing action substantially at a single frequency characteristic of the dopant ions. The two buffer layers confine light emitted by the active layer. The second buffer layer is grown epitaxially on the active layer. In the preferred embodiment, the structure is made by first growing a thin second buffer layer epitaxially on the active layer. The dopant ions are then implanted into the active layer through the thin second buffer layer. The structure is heated to a high temperature to anneal the structure and to activate the dopants. The second buffer layer is then further grown to make it thicker so as to be more effective in confining the light emission in the active layer.
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公开(公告)号：US08315526B2
公开(公告)日：2012-11-20
申请号：US11820299
申请日：2007-06-18
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译： 根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。 光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。 接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。 为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。
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15.发明授权Active region of a light emitting device optimized for increased modulation speed operation 有权针对增加的调制速度操作优化的发光器件的有源区域公开(公告)号：US07577172B2
公开(公告)日：2009-08-18
申请号：US11143374
申请日：2005-06-01
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3407
摘要： In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
摘要翻译： 根据本发明，获得了用于发光器件的增加的最大调制速度和改善的孔分布。 用于发光器件的量子阱结构的阻挡层形成具有变化的势垒能量高度。 在阻挡层之间形成量子阱结构的量子阱层。
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16.发明申请Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效具有由外延层过度生长制成的环形激光器的半导体系统公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译： 本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子 多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。
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公开(公告)号：US07215848B2
公开(公告)日：2007-05-08
申请号：US10768858
申请日：2004-01-29
IPC分类号： G02B6/26
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译： 公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。 光隔离器利用耦合到第一和第二光波导的谐振器。 谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。 谐振器可以在施加的磁场中使用铁磁材料层。 铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。 磁场可以由在铁磁材料层上变化的外部磁场产生。 或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。
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公开(公告)号：US07034331B2
公开(公告)日：2006-04-25
申请号：US10861144
申请日：2004-06-04
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。
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19.发明授权Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效制造长波长砷化铟镓（InGaAsN）活性区域的方法公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。
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20.发明授权Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells 有权具有用于增加量子阱的有效载流子捕获截面的元件的发光器件公开(公告)号：US06878970B2
公开(公告)日：2005-04-12
申请号：US10418408
申请日：2003-04-17
申请人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
发明人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105
摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。
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