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    NONVOLATILE MEMORY DEVICE
    11.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20140085969A1

    公开(公告)日：2014-03-27

    申请号：US13845478

    申请日：2013-03-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Daisuke SAIDA ,  Naoharu Shimomura ,  Minoru Amano ,  Eiji Kitagawa ,  Yoshishige Suzuki

    IPC分类号： G11C11/16

    CPC分类号： G11C11/161 ,  G11C11/1675

    摘要： According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of Δ   H > ( H u + H dx )  ( H u + H dx - H ext ) ( H u + H dx + H ext ) . ( 1 )

    摘要翻译： 根据一个实施例，非易失性存储器件包括存储器单元和控制单元。 存储单元包括磁存储元件，其包括：第一和第二铁磁层; 以及设置在第一和第二铁磁层之间的第一非磁性层。 存储单元包括：磁场施加单元，被配置为向第二铁磁层施加磁场，该磁场具有垂直于堆叠方向的第一平面内方向的分量。 控制单元电连接到磁存储元件，并且被配置为实现将第一和第二铁磁层之间的电压从第一设定电压改变到第二设定电压的设置操作。 由磁场施加单元施加的磁场满足＆Dgr的条件; H H（H u + H dx）（H u + H dx-H ext）（H u + H dx + H ext）。 （1）

    Magnetic memory device
    13.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US09608199B1

    公开(公告)日：2017-03-28

    申请号：US15069691

    申请日：2016-03-14

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa

    IPC分类号： H01L43/08 ,  H01L29/82 ,  H01L43/10 ,  H01L21/20 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer variable in magnetization direction, a second magnetic layer fixed in magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, the first magnetic layer including a first layer, a second layer, and a third layer between the first layer and the second layer and containing magnesium (Mg), iron (Fe), and oxygen (O), the second layer being between the nonmagnetic layer and the third layer, wherein a thickness of the second layer is greater than that of the first layer, and the thickness of the first layer is greater than that of the third layer.

    Magnetoresistive element and magnetic memory using the same
    16.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08953369B2

    公开(公告)日：2015-02-10

    申请号：US14159057

    申请日：2014-01-20

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01F10/32

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

    摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    17.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20140264673A1

    公开(公告)日：2014-09-18

    申请号：US14193340

    申请日：2014-02-28

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Takao Ochiai ,  Kay Yakushiji ,  Makoto Konoto ,  Hitoshi Kubota ,  Shinji Yuasa ,  Takayuki Nozaki ,  Akio Fukushima

    IPC分类号： H01L43/10

    CPC分类号： H01L43/10 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的第一磁性层; 具有不变磁化方向的第二磁性层; 以及隧道势垒层，设置在所述第一磁性层和所述第二磁性层之间并且包括MgFeO膜，其中所述MgFeO膜含有选自由Ti，V，Mn和Cu组成的组中的至少一种元素。

    Magnetic memory device
    18.
    发明授权
    Magnetic memory device 有权
    磁存储器件

    公开(公告)号：US09466350B2

    公开(公告)日：2016-10-11

    申请号：US14848258

    申请日：2015-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Akiyuki Murayama ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Minoru Amano ,  Takao Ochiai

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C2213/15

    摘要： According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

    摘要翻译： 根据一个实施例，磁存储器件包括第一互连，第二互连，具有第一和第二端子的磁阻效应元件，第一端子电连接到第一互连件，具有第一和第二端子的二极管，第一端子 与磁阻效应元件的第一端子电连接，第二端子电连接到磁阻效应元件的第二端子，以及具有源极和漏极端子的晶体管，源极和漏极端子中的一个电连接到 磁阻效应元件的第二端子和二极管的第二端子，源极和漏极端子中的另一个电连接到第二互连件。

    MAGNETORESISTIVE ELEMENT
    19.
    发明申请
    MAGNETORESISTIVE ELEMENT 审中-公开
    磁电元件

    公开(公告)号：US20160013398A1

    公开(公告)日：2016-01-14

    申请号：US14859024

    申请日：2015-09-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

    IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/08

    CPC分类号： H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。

    Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element
    20.
    发明授权
    Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element 有权
    磁阻元件，磁存储器和制造磁阻元件的方法

    公开(公告)号：US09312475B2

    公开(公告)日：2016-04-12

    申请号：US14147072

    申请日：2014-01-03

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshihiko Nagase ,  Daisuke Watanabe ,  Koji Ueda ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Kenji Noma ,  Tadashi Kai

    IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.

    摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层，第一非磁性层，导电层。 第一和第二磁性层具有垂直于膜平面的容易磁化的轴。 第一和第二磁性层分别具有可变和不变的磁化方向。 第一非磁性层位于第一和第二磁性层之间。 导电层位于与形成有第一非磁性层的表面相对的第一磁性层的表面上。 第一磁性层具有通过交替层叠磁性和非磁性材料而获得的结构。 非磁性材料包括Ta，W，Nb，Mo，Zr，Hf中的至少一种。 磁性材料包括Co和Fe。 磁性材料之一与第一非磁性层接触。 非磁性材料之一与导电层接触。