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公开(公告)号：US08946837B2
公开(公告)日：2015-02-03
申请号：US14152286
申请日：2014-01-10
CPC分类号： H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second magnetic material films are stacked. The first magnetic material film is nearest to the first nonmagnetic layer in the first magnetic layer. The nonmagnetic material film includes at least one of Ta, Zr, Nb, Mo, Ru, Ti, V, Cr, W, Hf. The second magnetic material film includes stacked materials, including first magnetic material nearest to the first nonmagnetic layer among the stacked materials, and second magnetic material which is same magnetic material as the first magnetic material and has smaller thickness than the first magnetic material.
摘要翻译： 根据一个实施例，公开了一种半导体存储装置。 该装置包括第一磁性层，第二磁性层，它们之间的第一非磁性层。 第一磁性层包括其中堆叠第一和第二磁性材料膜之间的第一磁性材料膜，第二磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜最靠近第一磁性层中的第一非磁性层。 非磁性材料膜包括Ta，Zr，Nb，Mo，Ru，Ti，V，Cr，W，Hf中的至少一种。 第二磁性材料膜包括堆叠材料，包括堆叠材料中最靠近第一非磁性层的第一磁性材料和与第一磁性材料相同的磁性材料并且具有比第一磁性材料更薄的厚度的第二磁性材料。
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公开(公告)号：US09741928B2
公开(公告)日：2017-08-22
申请号：US15041722
申请日：2016-02-11
发明人： Koji Ueda , Toshihiko Nagase , Kazuya Sawada , Youngmin Eeh , Daisuke Watanabe , Hiroaki Yoda
CPC分类号： H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
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公开(公告)号：US20160013398A1
公开(公告)日：2016-01-14
申请号：US14859024
申请日：2015-09-18
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。
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公开(公告)号：US09153770B2
公开(公告)日：2015-10-06
申请号：US13785952
申请日：2013-03-05
发明人： Daisuki Watanbe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive element includes a first magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation; a second magnetic layer having an axis of magnetization perpendicular to the film surface and a changeable magnetization orientation; a first nonmagnetic layer arranged between the first and second magnetic layers; and a third magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation opposite that of the first magnetic layer. The first magnetic layer has a first magnetic material film in contact with the first nonmagnetic layer, a nonmagnetic material film in contact with the first magnetic material film, and a second magnetic material film containing Co100-xWx (0
摘要翻译： 磁阻元件包括具有垂直于膜表面的磁化轴的第一磁性层和固定的磁化取向; 具有垂直于膜表面的磁化轴的第二磁性层和可变磁化取向; 布置在第一和第二磁性层之间的第一非磁性层; 以及具有与膜表面垂直的磁化轴的第三磁性层和与第一磁性层相反的固定磁化方向。 第一磁性层具有与第一非磁性层接触的第一磁性材料膜，与第一磁性材料膜接触的非磁性材料膜和含有Co100-xWx（0
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5.发明授权公开(公告)号：US09312475B2
公开(公告)日：2016-04-12
申请号：US14147072
申请日：2014-01-03
发明人： Toshihiko Nagase , Daisuke Watanabe , Koji Ueda , Katsuya Nishiyama , Eiji Kitagawa , Kenji Noma , Tadashi Kai
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.
摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层，第一非磁性层，导电层。 第一和第二磁性层具有垂直于膜平面的容易磁化的轴。 第一和第二磁性层分别具有可变和不变的磁化方向。 第一非磁性层位于第一和第二磁性层之间。 导电层位于与形成有第一非磁性层的表面相对的第一磁性层的表面上。 第一磁性层具有通过交替层叠磁性和非磁性材料而获得的结构。 非磁性材料包括Ta，W，Nb，Mo，Zr，Hf中的至少一种。 磁性材料包括Co和Fe。 磁性材料之一与第一非磁性层接触。 非磁性材料之一与导电层接触。
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公开(公告)号：US20150171317A1
公开(公告)日：2015-06-18
申请号：US14573231
申请日：2014-12-17
CPC分类号： H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second magnetic material films are stacked. The first magnetic material film is nearest to the first nonmagnetic layer in the first magnetic layer. The nonmagnetic material film includes at least one of Ta, Ar, Nb, Mo, Ru, Ti, V, Cr, W, Hf. The second magnetic material film includes a stacked materials, including first magnetic material nearest to the first nonmagnetic layer among the stacked materials, and second magnetic material which is same magnetic material as the first magnetic material and has smaller thickness than the first magnetic material.
摘要翻译： 根据一个实施例，公开了一种半导体存储装置。 该装置包括第一磁性层，第二磁性层，它们之间的第一非磁性层。 第一磁性层包括其中堆叠第一和第二磁性材料膜之间的第一磁性材料膜，第二磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜最靠近第一磁性层中的第一非磁性层。 非磁性材料膜包括Ta，Ar，Nb，Mo，Ru，Ti，V，Cr，W，Hf中的至少一种。 第二磁性材料膜包括层叠材料，其包括在堆叠材料中最靠近第一非磁性层的第一磁性材料和与第一磁性材料相同的磁性材料并且具有比第一磁性材料更薄的厚度的第二磁性材料。
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公开(公告)号：US20150084142A1
公开(公告)日：2015-03-26
申请号：US14569137
申请日：2014-12-12
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。
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公开(公告)号：US20140124884A1
公开(公告)日：2014-05-08
申请号：US14152286
申请日：2014-01-10
IPC分类号： H01L43/02
CPC分类号： H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second magnetic material films are stacked. The first magnetic material film is nearest to the first nonmagnetic layer in the first magnetic layer. The nonmagnetic material film includes at least one of Ta, Ar, Nb, Mo, Ru, Ti, V, Cr, W, Hf. The second magnetic material film includes a stacked materials, including first magnetic material nearest to the first nonmagnetic layer among the stacked materials, and second magnetic material which is same magnetic material as the first magnetic material and has smaller thickness than the first magnetic material.
摘要翻译： 根据一个实施例，公开了一种半导体存储装置。 该装置包括第一磁性层，第二磁性层，它们之间的第一非磁性层。 第一磁性层包括其中堆叠第一和第二磁性材料膜之间的第一磁性材料膜，第二磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜最靠近第一磁性层中的第一非磁性层。 非磁性材料膜包括Ta，Ar，Nb，Mo，Ru，Ti，V，Cr，W，Hf中的至少一种。 第二磁性材料膜包括堆叠材料，其包括堆叠材料中最靠近第一非磁性层的第一磁性材料和与第一磁性材料相同的磁性材料并且具有比第一磁性材料更薄的厚度的第二磁性材料。
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9.发明申请公开(公告)号：US20140119109A1
公开(公告)日：2014-05-01
申请号：US14147072
申请日：2014-01-03
发明人： Toshihiko Nagase , Daisuke Watanabe , Koji Ueda , Katsuya Nishiyama , Eiji Kitagawa , Kenji Noma , Tadashi Kai
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.
摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层，第一非磁性层，导电层。 第一和第二磁性层具有垂直于膜平面的容易磁化的轴。 第一和第二磁性层分别具有可变和不变的磁化方向。 第一非磁性层位于第一和第二磁性层之间。 导电层位于与形成有第一非磁性层的表面相对的第一磁性层的表面上。 第一磁性层具有通过交替层叠磁性和非磁性材料而获得的结构。 非磁性材料包括Ta，W，Nb，Mo，Zr，Hf中的至少一种。 磁性材料包括Co和Fe。 磁性材料之一与第一非磁性层接触。 非磁性材料之一与导电层接触。
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公开(公告)号：US09780298B2
公开(公告)日：2017-10-03
申请号：US14859024
申请日：2015-09-18
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
IPC分类号： H01L43/02 , G01R33/09 , H01F10/30 , G11B5/66 , G11C11/16 , H01L43/08 , H01L43/10 , H01L27/22
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
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