Open plasma lamp for forming a light-sustained plasma

    公开(公告)号:US09721761B2

    公开(公告)日:2017-08-01

    申请号:US15043804

    申请日:2016-02-15

    CPC classification number: H01J37/32339 H01J37/32449 H01J65/04

    Abstract: An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

    Apparatus and method for cross-flow purge for optical components in a chamber

    公开(公告)号:US09662688B2

    公开(公告)日:2017-05-30

    申请号:US13935960

    申请日:2013-07-05

    CPC classification number: B08B5/02 G02B27/0006

    Abstract: An apparatus for cross-flow purging for optical components in a chamber, including: a housing with first and second axial ends, a side wall extending in an axial direction and connecting the first and second axial ends, and the chamber formed by the first and second axial ends and the side wall; an optical component disposed within the chamber and fixed with respect to the housing via at least one connecting point on the optical component; an inlet port aligned with the side wall, between the first and second axial ends in the axial direction, in a radial direction orthogonal to the axial direction and arranged to inject a purge gas into the chamber and across the optical component in a radial direction orthogonal to the axial direction; and an exhaust port aligned with the side wall in the radial direction and arranged to exhaust the purge gas from the chamber.

    Method and System for Imaging of a Photomask Through a Pellicle
    13.
    发明申请
    Method and System for Imaging of a Photomask Through a Pellicle 有权
    通过防护薄膜成像光掩模的方法和系统

    公开(公告)号:US20160225582A1

    公开(公告)日:2016-08-04

    申请号:US15012599

    申请日:2016-02-01

    Abstract: A system for imaging a sample through a protective pellicle is disclosed. The system includes an electron beam source configured to generate an electron beam and a sample stage configured to secure a sample and a pellicle, wherein the pellicle is disposed above the sample. The system also includes an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle and onto a portion of the sample. In addition, the system includes a detector assembly positioned above the pellicle and configured to detect electrons emanating from the surface of the sample.

    Abstract translation: 公开了一种通过保护性薄膜成像样品的系统。 该系统包括被配置为产生电子束的电子束源和被配置为固定样品和防护薄膜组件的样品台,其中防护薄膜组件设置在样品上方。 该系统还包括电子 - 光学柱,其包括一组电子 - 光学元件,以将至少一部分电子束通过防护薄膜组件引导到样品的一部分上。 此外,该系统包括位于防护薄膜组件上方并被配置成检测从样品表面发出的电子的检测器组件。

    Apparatus and method for multiplexed multiple discharge plasma produced sources
    14.
    发明授权
    Apparatus and method for multiplexed multiple discharge plasma produced sources 有权
    多重放电等离子体产生源的装置和方法

    公开(公告)号:US09277634B2

    公开(公告)日:2016-03-01

    申请号:US14153536

    申请日:2014-01-13

    Inventor: Gildardo Delgado

    CPC classification number: H05G2/003

    Abstract: An apparatus for producing EUV light, including: a plate with pluralities of through-bores; at least one power system; and a plurality of discharge plasma devices disposed in the through-bores. Each device includes: a respective plasma electrode forming at least part of a respective plasma-producing region; a respective magnetic core embedded in the plate and aligned with the respective plasma electrode in a radial direction and configured to create a respective magnetic field within the respective plasma-producing region; and a respective feed system arranged to supply an ionizable material to the respective plasma-producing region. The power system is configured to supply electrical power to the plasma electrodes to create respective electric fields in the respective plasma-producing regions. The combination of the respective electric field and the respective magnetic fields is arranged to create respective plasma from the ionizable material, the respective plasma creating respective EUV light.

    Abstract translation: 一种用于生产EUV光的装置,包括:具有多个通孔的板; 至少一个电力系统; 以及设置在通孔中的多个放电等离子体装置。 每个器件包括:形成相应等离子体产生区域的至少一部分的相应等离子体电极; 嵌入板中的相应的磁芯并且在径向方向上与相应的等离子体电极对准并且被配置为在相应的等离子体产生区域内产生相应的磁场; 以及相应的进料系统,其布置成将可电离材料供应到相应的等离子体产生区域。 电力系统被配置为向等离子体电极提供电力以在相应的等离子体产生区域中产生相应的电场。 各个电场和各个磁场的组合被布置成从可电离材料产生相应的等离子体,相应的等离子体产生相应的EUV光。

    METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS
    15.
    发明申请
    METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS 有权
    气体分解光化学分散污染的方法和系统

    公开(公告)号:US20140362366A1

    公开(公告)日:2014-12-11

    申请号:US14466516

    申请日:2014-08-22

    Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

    Abstract translation: 一种用于确定半导体检测计量或光刻设备中的优化的吹扫气体流的计算机实现的方法,包括接收允许的污染物摩尔分数,与污染物相关的污染物除气流量,污染物质量扩散率,脱气表面长度 ,压力,温度,通道高度和吹扫气体的分子量,基于允许的污染物摩尔分数,污染物除气流量,通道高度和排气表面长度计算流量因子,比较 流量因子到预定的最大流量因子值,从流动因子,污染物质量扩散性,压力,温度和吹扫气体的分子量计算最小净化气体速度和吹扫气质量流率,并引入 吹扫气体进入具有最小清洗气体速度的半导体检测计量或光刻设备 净化气体流量。

    APPARATUS AND METHOD FOR MULTIPLEXED MULTIPLE DISCHARGE PLASMA PRODUCED SOURCES
    16.
    发明申请
    APPARATUS AND METHOD FOR MULTIPLEXED MULTIPLE DISCHARGE PLASMA PRODUCED SOURCES 有权
    多重排放等离子体生成源的装置和方法

    公开(公告)号:US20140197733A1

    公开(公告)日:2014-07-17

    申请号:US14153536

    申请日:2014-01-13

    Inventor: Gildardo Delgado

    CPC classification number: H05G2/003

    Abstract: An apparatus for producing EUV light, including: a plate with pluralities of through-bores; at least one power system; and a plurality of discharge plasma devices disposed in the through-bores. Each device includes: a respective plasma electrode forming at least part of a respective plasma-producing region; a respective magnetic core embedded in the plate and aligned with the respective plasma electrode in a radial direction and configured to create a respective magnetic field within the respective plasma-producing region; and a respective feed system arranged to supply an ionizable material to the respective plasma-producing region. The power system is configured to supply electrical power to the plasma electrodes to create respective electric fields in the respective plasma-producing regions. The combination of the respective electric field and the respective magnetic fields is arranged to create respective plasma from the ionizable material, the respective plasma creating respective EUV light.

    Abstract translation: 一种用于生产EUV光的装置,包括:具有多个通孔的板; 至少一个电力系统; 以及设置在通孔中的多个放电等离子体装置。 每个器件包括:形成相应等离子体产生区域的至少一部分的相应等离子体电极; 嵌入板中的相应的磁芯并且在径向方向上与相应的等离子体电极对准并且被配置为在相应的等离子体产生区域内产生相应的磁场; 以及相应的进料系统,其布置成将可电离材料供应到相应的等离子体产生区域。 电力系统被配置为向等离子体电极提供电力以在相应的等离子体产生区域中产生相应的电场。 各个电场和各个磁场的组合被布置成从可电离材料产生相应的等离子体,相应的等离子体产生相应的EUV光。

    APPARATUS FOR PURIFYING A CONTROLLED-PRESSURE ENVIRONMENT
    17.
    发明申请
    APPARATUS FOR PURIFYING A CONTROLLED-PRESSURE ENVIRONMENT 有权
    用于净化控制压力环境的装置

    公开(公告)号:US20140004025A1

    公开(公告)日:2014-01-02

    申请号:US13924859

    申请日:2013-06-24

    Abstract: An apparatus for purifying a controlled-pressure environment in a chamber, including: a piece of lithium-aluminum alloy located in the chamber; an activation element arranged to impart energy to the piece of lithium-aluminum alloy to sublimate lithium from the piece of lithium-aluminum alloy; a feedback control system including a sensor system arranged to measure a condition within the chamber, and a controller in communication with the sensor and configured to control operation of the activation element according to an evaluation of the condition; and a collection plate located in the chamber and arranged to form a layer of the sublimated lithium on a surface of the collection plate.

    Abstract translation: 一种用于净化室内的受控压力环境的装置,包括:位于所述室中的一块锂铝合金; 激活元件,被布置成赋予所述锂铝合金片能量以从所述锂铝合金片升华锂; 反馈控制系统,包括布置成测量所述室内的状况的传感器系统,以及与所述传感器通信并被配置为根据所述条件的评估来控制所述启动元件的操作的控制器; 以及收集板,其位于所述室中并且布置成在所述收集板的表面上形成升华的锂层。

    Back-illuminated sensor with boron layer

    公开(公告)号:US10446696B2

    公开(公告)日:2019-10-15

    申请号:US16151225

    申请日:2018-10-03

    Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

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