SCANNING SCATTEROMETRY OVERLAY MEASUREMENT

    公开(公告)号:US20220214285A1

    公开(公告)日:2022-07-07

    申请号:US17140999

    申请日:2021-01-04

    Abstract: An overlay metrology system may include an illumination sub-system to sequentially illuminate an overlay target with a first illumination lobe and a second illumination lobe opposite the first illumination lobe, where the overlay target includes grating-over-grating features formed from periodic structures on a first sample layer and a second sample layer. The system may further include an imaging sub-system to generate a first image and a second image of the overlay target. The first image includes an unresolved image of the grating-over-grating structures formed from a single non-zero diffraction order of the first illumination lobe. The second image includes an unresolved image of the one or more grating-over-grating structures formed from a single non-zero diffraction order of the second illumination lobe. The system may further include a controller to determine an overlay error between the first layer and the second layer based on the first image and the second image.

    Parameter-stable misregistration measurement amelioration in semiconductor devices

    公开(公告)号:US11101153B2

    公开(公告)日:2021-08-24

    申请号:US16496918

    申请日:2019-08-23

    Abstract: A parameter-stable misregistration measurement amelioration system and method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.

    DEVICE FEATURE SPECIFIC EDGE PLACEMENT ERROR (EPE)

    公开(公告)号:US20240168391A1

    公开(公告)日:2024-05-23

    申请号:US18386846

    申请日:2023-11-03

    Abstract: A system and method are disclosed for generating metrology measurements with second sub-system such as an optical sub-system. The method may include performing a training and a run-time operation. The training may include receiving first metrology data for device features from the first metrology sub-system (e.g., optical); generating first metrology measurements (e.g., critical dimensions, etc.); binning the device features into two or more device bins based on the first metrology measurements; and identifying representative metrology targets for the two or more device bins based on distributions of the first metrology measurements. The run-time operation may include receiving run-time metrology data (e.g., optical) of the representative metrology targets; and generating run-time metrology measurements based on the run-time metrology data.

    On-product overlay targets
    15.
    发明授权

    公开(公告)号:US11967535B2

    公开(公告)日:2024-04-23

    申请号:US17519512

    申请日:2021-11-04

    Abstract: A product includes a semiconductor substrate, with at least first and second thin-film layers disposed on the substrate and patterned to define a matrix of dies, which are separated by scribe lines and contain active areas circumscribed by the scribe lines. A plurality of overlay targets are formed in the first and second thin-film layers within each of the active areas, each overlay target having dimensions no greater than 10 μm×10 μm in a plane parallel to the substrate. The plurality of overlay targets include a first linear grating formed in the first thin-film layer and having a first grating vector, and a second linear grating formed in the second thin-film layer, in proximity to the first linear grating, and having a second grating vector parallel to the first grating vector.

    Sensitive optical metrology in scanning and static modes

    公开(公告)号:US11933717B2

    公开(公告)日:2024-03-19

    申请号:US16586504

    申请日:2019-09-27

    Abstract: A metrology system may include a metrology tool to selectively perform metrology measurements in a static mode in which one or more metrology targets on a sample are stationary during a measurement or a scanning mode in which one or more metrology targets are in motion during a measurement, and a controller communicatively coupled to the translation stage and at least one of the one or more detectors. The controller may receive locations of metrology targets on the sample to be inspected, designate the metrology targets for inspection with the static mode or the scanning mode, direct the metrology tool to perform metrology measurements on the metrology targets in the static mode or the scanning mode based on the designation, and generate metrology data for the sample based on the metrology measurements on the metrology targets.

    SCATTEROMETRY OVERLAY METROLOGY WITH ORTHOGONAL FINE-PITCH SEGMENTATION

    公开(公告)号:US20240053687A1

    公开(公告)日:2024-02-15

    申请号:US17885909

    申请日:2022-08-11

    CPC classification number: G03F7/70633 G01N21/9501 G03F7/70683

    Abstract: An overlay metrology target may include grating-over-grating structures formed from a lower grating structure with a first coarse pitch in a first sample layer and an upper grating structure with a second coarse pitch in a second sample layer, where the upper and lower grating structures overlap on the sample. At least one of the upper grating structure or the lower grating structure may include features with a fine pitch smaller than a wavelength of an illumination beam and arranged to rotate first-order diffraction of the illumination beam associated with at least one of the first or second coarse pitches with respect to at least one of specular reflection from a top surface of the sample or zero-order diffraction from the one or more grating structures. Overlay between the first and second layers of the sample is determinable from an image of the grating structures based on the first-order diffraction.

    MASSIVE OVERLAY METROLOGY SAMPLING WITH MULTIPLE MEASUREMENT COLUMNS

    公开(公告)号:US20240027919A1

    公开(公告)日:2024-01-25

    申请号:US18376703

    申请日:2023-10-04

    CPC classification number: G03F7/70633 G03F9/7084 H01J37/3045

    Abstract: A multi-column metrology tool may include two or more measurement columns distributed along a column direction, where the two or more measurement columns simultaneously probe two or more measurement regions on a sample including metrology targets. A measurement column may include an illumination sub-system to direct illumination to the sample, a collection sub-system including a collection lens to collect measurement signals from the sample and direct it to one or more detectors, and a column-positioning sub-system to adjust a position of the collection lens. A measurement region of a measurement column may be defined by a field of view of the collection lens and a range of the positioning system in the lateral plane. The tool may further include a sample-positioning sub-system to scan the sample along a scan path different than the column direction to position metrology targets within the measurement regions of the measurement columns for measurements.

    MULTI-DIRECTIONAL OVERLAY METROLOGY USING MULTIPLE ILLUMINATION PARAMETERS AND ISOLATED IMAGING

    公开(公告)号:US20230328351A1

    公开(公告)日:2023-10-12

    申请号:US17716757

    申请日:2022-04-08

    Abstract: An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.

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