公开(公告)号：US09613860B2

公开(公告)日：2017-04-04

申请号：US14996323

申请日：2016-01-15

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L29/49 ,  H01L21/78

CPC分类号： H01L21/76895 ,  H01L21/022 ,  H01L21/32136 ,  H01L21/465 ,  H01L21/78 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： According to one embodiment, a method of manufacturing a thin-film transistor includes forming a semiconductor layer on a gate electrode with an insulating layer 12 being interposed, forming interconnect formation layers on the semiconductor layer, forming a plurality of interconnects and electrodes by patterning the interconnect formation layers through etching, patterning the semiconductor layer in an island shape through etching after forming the electrodes, exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer, and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.

公开(公告)号：US11906862B2

公开(公告)日：2024-02-20

申请号：US17959306

申请日：2022-10-04

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Fumiya Kimura ,  Kazuhide Mochizuki ,  Hitoshi Tanaka ,  Kenichi Akutsu ,  Atsuko Shimada

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  H01L27/12

CPC分类号： G02F1/136286 ,  G02F1/1368 ,  G02F1/136227 ,  G02F1/13685 ,  G02F1/134318 ,  G02F1/134363 ,  G02F1/136295 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225

摘要： According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.

公开(公告)号：US11846860B2

公开(公告)日：2023-12-19

申请号：US18164809

申请日：2023-02-06

申请人： Japan Display Inc.

发明人： Akihiro Hanada ,  Toshihide Jinnai ,  Isao Suzumura ,  Hajime Watakabe ,  Ryo Onodera

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC分类号： G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US11309336B2

公开(公告)日：2022-04-19

申请号：US16922438

申请日：2020-07-07

申请人： Japan Display Inc.

发明人： Isao Suzumura

IPC分类号： H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/40 ,  H01L29/423 ,  H01L21/426

摘要： The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

公开(公告)号：US20210288078A1

公开(公告)日：2021-09-16

申请号：US17336620

申请日：2021-06-02

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

摘要： The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10573666B2

公开(公告)日：2020-02-25

申请号：US16011725

申请日：2018-06-19

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

摘要： The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US10539846B2

公开(公告)日：2020-01-21

申请号：US16109834

申请日：2018-08-23

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC分类号： G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343 ,  H01L29/423

摘要： According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US10453965B2

公开(公告)日：2019-10-22

申请号：US15892513

申请日：2018-02-09

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Isao Suzumura

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L27/146 ,  H01L29/423 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1368

摘要： The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

公开(公告)号：US20180342536A1

公开(公告)日：2018-11-29

申请号：US15978464

申请日：2018-05-14

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Yohei Yamaguchi ,  Marina Shiokawa ,  Ryotaro Kimura

IPC分类号： H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1333

CPC分类号： H01L27/124 ,  G02F1/133305 ,  G02F1/134363 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/7869

摘要： The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

公开(公告)号：US20180286890A1

公开(公告)日：2018-10-04

申请号：US15923026

申请日：2018-03-16

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Yohei Yamaguchi ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Marina Shiokawa

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L29/66

摘要： The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.