TECHNOLOGIES FOR ALIGNED VIAS OVER MULTIPLE LAYERS

    公开(公告)号:US20220406618A1

    公开(公告)日:2022-12-22

    申请号:US17351537

    申请日:2021-06-18

    申请人: Intel Corporation

    摘要: Techniques for low- or zero-misaligned vias are disclosed. In one embodiment, a high-photosensitivity, medium-photosensitivity, and low-photosensitivity layer are applied to a substrate and exposed at the same time with use of a multi-tone mask. After being developed, one layer forms a mold for a first via, one layer forms a mold for a conductive trace and a second via, and one layer forms an overhang over the position for the second via. The molds formed by the photosensitive layers are filled with copper and then etched. The overhang prevents the top of the copper infill below the overhang region from being etched. As such, the region under the overhang forms a pillar or column after etching, which can be used as a via. Other embodiments are disclosed.