公开(公告)号：US20230395467A1

公开(公告)日：2023-12-07

申请号：US17833648

申请日：2022-06-06

申请人： Intel Corporation

发明人： Srinivas V. Pietambaram ,  Kristof Darmawikarta ,  Tarek A. Ibrahim ,  Jeremy D. Ecton ,  Brandon Christian Marin ,  Gang Duan ,  Suddhasattwa Nad ,  Yi Yang ,  Benjamin T. Duong ,  Junxin Wang ,  Sameer R. Paital

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H05K1/11 ,  H01L23/00 ,  H05K3/42 ,  H05K3/46 ,  H05K1/03

CPC分类号： H01L23/481 ,  H01L23/49822 ,  H01L23/49816 ,  H01L21/486 ,  H01L21/76898 ,  H05K1/112 ,  H01L24/16 ,  H05K3/429 ,  H05K3/4644 ,  H05K1/0306 ,  H01L2224/16225

摘要： In one embodiment, a substrate includes a glass core layer defining a plurality of holes between a first side of the glass core layer and a second side of the glass core layer opposite the first side and a conductive metal inside the holes of the glass core layer. The conductive metal electrically couples the first side of the glass core layer and the second side of the glass core layer. The substrate also includes a dielectric material between the conductive metal and the inside surfaces of the holes of the glass core layer.

公开(公告)号：US20230395445A1

公开(公告)日：2023-12-07

申请号：US17833650

申请日：2022-06-06

申请人： Intel Corporation

发明人： Srinivas V. Pietambaram ,  Kristof Darmawikarta ,  Tarek A. Ibrahim ,  Jeremy D. Ecton ,  Brandon Christian Marin ,  Gang Duan ,  Suddhasattwa Nad ,  Yi Yang ,  Benjamin T. Duong ,  Junxin Wang ,  Sameer R. Paital

IPC分类号： H01L23/15 ,  H01L23/498 ,  H01L21/48 ,  H05K1/03 ,  H05K3/40

CPC分类号： H01L23/15 ,  H01L23/49827 ,  H01L21/486 ,  H05K1/0306 ,  H05K3/4061

摘要： In one embodiment, a substrate includes a glass core layer defining a plurality of holes between a first side of the glass core layer and a second side of the glass core layer opposite the first side and a conductive metal inside the holes of the glass core layer. The conductive metal electrically couples the first side of the glass core layer and the second side of the glass core layer. The substrate also includes a dielectric material between the conductive metal and the inside surfaces of the holes of the glass core layer.

公开(公告)号：US20240222293A1

公开(公告)日：2024-07-04

申请号：US18091616

申请日：2022-12-30

申请人： Intel Corporation

发明人： Kristof Darmawikarta ,  Srinivas V. Pietambaram ,  Gang Duan ,  Siddharth Alur Narasimha Krishna ,  Sameer R. Paital ,  Helme A. Castro De la Torre

IPC分类号： H01L23/58 ,  H01L21/48 ,  H01L23/498

CPC分类号： H01L23/58 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827

摘要： Technologies for ribbon field-effect transistors with variable fin numbers are disclosed. In an illustrative embodiment, a stack of semiconductor fins is formed, with each semiconductor fin having a source region, a channel region, and a drain region. Some or all of the channel regions can be selectively removed, allowing for the drive and/or leakage current to be tuned. In some embodiments, one or more of the semiconductor fins near the top of the stack can be removed. In other embodiments, one or more of the semiconductor fins at or closer to the bottom of the stack can be removed.