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    LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
    12.
    发明公开
    LASER PROCESSING DEVICE AND LASER PROCESSING METHOD 审中-公开

    公开(公告)号：US20240051067A1

    公开(公告)日：2024-02-15

    申请号：US18266842

    申请日：2021-12-20

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yo SUGIMOTO ,  Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Naoki UCHIYAMA ,  Takashi KURITA ,  Ryo YOSHIMURA

    IPC: B23K26/351 ,  B23K26/064 ,  B23K26/04

    CPC classification number: B23K26/351 ,  B23K26/064 ,  B23K26/048

    Abstract: A laser processing method includes: a first step of preparing a wafer including a plurality of functional elements disposed to be adjacent to each other via a street; and a second step of, after the first step, irradiating the street with laser light based on information regarding the street such that a surface layer of the street is removed in a first region of the street and the surface layer remains in a second region of the street. The information regarding the street includes information indicating that, when a modified region is formed in the wafer along a line passing through the street, a fracture extending from the modified region does not reach the street along the line in the first region, and reaches the street along the line in the second region.

    LASER MACHINING METHOD
    16.
    发明公开
    LASER MACHINING METHOD 审中-公开

    公开(公告)号：US20240033859A1

    公开(公告)日：2024-02-01

    申请号：US18268383

    申请日：2021-12-20

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Yo SUGIMOTO ,  Takeshi SAKAMOTO ,  Takafumi OGIWARA ,  Naoki UCHIYAMA ,  Takashi KURITA ,  Ryo YOSHIMURA

    IPC: B23K26/38 ,  B23K37/00

    CPC classification number: B23K26/38 ,  B23K37/00

    Abstract: A laser processing method includes a first step of preparing a wafer including a plurality of functional elements disposed to be adjacent to each other via a street, a second step of, after the first step, forming a modified region in the wafer along a line passing through the street, and a third step of, after the second step, irradiating the street with laser light such that a surface layer of the street is removed, and a fracture extending from the modified region reaches a bottom surface of a recess formed by removing the surface layer, along the line.

    LAMINATED ELEMENT MANUFACTURING METHOD
    17.
    发明申请
    LAMINATED ELEMENT MANUFACTURING METHOD 有权

    公开(公告)号：US20210057222A1

    公开(公告)日：2021-02-25

    申请号：US16633808

    申请日：2018-07-13

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi SAKAMOTO ,  Ryuji SUGIURA ,  Yuta KONDOH ,  Naoki UCHIYAMA

    IPC: H01L21/268 ,  H01L21/683 ,  H01L25/065

    Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

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