LAMINATED ELEMENT MANUFACTURING METHOD

    公开(公告)号:US20210057222A1

    公开(公告)日:2021-02-25

    申请号:US16633808

    申请日:2018-07-13

    Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

    MACHINING CONDITION ACQUISITION METHOD AND LASER MACHINING DEVICE

    公开(公告)号:US20250100085A1

    公开(公告)日:2025-03-27

    申请号:US18727716

    申请日:2022-10-31

    Abstract: There is provided a processing condition acquisition method for acquiring conditions of laser processing for forming a weakened region in a functional element layer by irradiating an object with laser light from a first surface side, the object including a substrate including a first surface and a second surface opposite to the first surface, and the functional element layer provided on the second surface of the substrate, the method including: a first step of performing first processing as the laser processing a plurality of times at different positions in the first surface while changing a converging position of the laser light in a Z direction intersecting the first surface within a range including an interface between the substrate and the functional element layer.

    LAMINATED ELEMENT MANUFACTURING METHOD

    公开(公告)号:US20210057402A1

    公开(公告)日:2021-02-25

    申请号:US16633367

    申请日:2018-07-13

    Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

    LASER PROCESSING METHOD
    5.
    发明申请

    公开(公告)号:US20190304839A1

    公开(公告)日:2019-10-03

    申请号:US16388209

    申请日:2019-04-18

    Abstract: Laser light is converged at an object including a semiconductor substrate formed with a plurality of functional devices on a front surface, from a back surface of the semiconductor substrate, and while a distance between the front surface and a first converging point of the laser light is maintained at a first distance, whereby a first modified region is formed along the line. The laser light is converged at the object from the back surface, and while a distance between the front surface and a second converging point is maintained at a second distance, and while the second converging point is offset with respect to a position at which the first converging point is converged, whereby a second modified region is formed along the line. A predetermined portion including the back surface and at least the second modified region is removed.

    LASER PROCESSING DEVICE AND INSPECTION METHOD

    公开(公告)号:US20230146811A1

    公开(公告)日:2023-05-11

    申请号:US17914863

    申请日:2021-03-04

    CPC classification number: B23K26/066 B23K26/53 B23K26/073

    Abstract: A laser processing device includes: a stage that supports a wafer having a front surface, on which a plurality of functional elements are formed and a street region extends so as to pass between adjacent functional elements, and a back surface on a side opposite to the front surface; a light source that emits laser light to the wafer from the front surface side to form one or more modified regions inside the wafer; a spatial light modulator as a beam width adjusting unit; and a control unit that controls the spatial light modulator so that the beam width of the laser light is adjusted to be equal to or less than the width of the street region and a target beam width according to surface information including the position and height of a structure forming a functional element adjacent to the street region.

    LASER MACHINING DEVICE
    8.
    发明申请

    公开(公告)号:US20210370437A1

    公开(公告)日:2021-12-02

    申请号:US17256836

    申请日:2019-07-01

    Abstract: A laser processing device including a laser light source that outputs laser light, a measurement light source that outputs measurement light, a converging unit that converges the laser light toward an object to be processed to form a first converging point and converges the measurement light toward the object to be processed to form a second converging point, a measurement part for measuring displacement of an entrance surface according to reflected light of the measurement light on the entrance surface of the laser light and the measurement light in the object to be processed, and an adjustment unit that adjusts a position of the first converging point in a direction intersecting the entrance surface according to a measurement result of the displacement of the entrance surface.

    LAMINATED ELEMENT MANUFACTURING METHOD
    9.
    发明申请

    公开(公告)号:US20200176415A1

    公开(公告)日:2020-06-04

    申请号:US16633240

    申请日:2018-07-18

    Abstract: A laminating step includes a first bonding step of bonding a circuit layer of a second wafer to a circuit layer of a first wafer, a grinding step of grinding a semiconductor substrate of the second wafer, and a second bonding step of bonding a circuit layer of the third wafer to the semiconductor substrate of the second wafer. In a laser light irradiation step, a modified region is formed and a fracture extends from the modified region along a laminating direction of a laminated body by irradiating the semiconductor substrate of the first wafer with a laser light.

    LASER PROCESSING METHOD, AND LASER PROCESSING DEVICE

    公开(公告)号:US20180281116A1

    公开(公告)日:2018-10-04

    申请号:US15763915

    申请日:2016-08-09

    Abstract: Provided is a laser processing method including a first step of forming a first modified region along a cutting line by converging laser light on an object having a surface and a back surface with the back surface as an incident surface and moving a first converging point along the cutting line set to pass between an effective region and an ineffective region adjacent to each other while maintaining a distance between a surface and the first converging point at a first distance, and a second step of forming a second modified region along the cutting line by converging the laser light on the object with the back surface as the incident surface and moving a second converging point along the cutting line while maintaining a distance between the surface and the second converging point at a second distance larger than the first distance.

Patent Agency Ranking