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公开(公告)号：US09614110B2
公开(公告)日：2017-04-04
申请号：US15072228
申请日：2016-03-16
Inventor： Jin Tae Kim , Choon Gi Choi , Young Jun Yu , Kwang Hyo Chung , Jin Sik Choi , Hong Kyw Choi
IPC: H01L31/02 , H01L31/028 , H01L31/0352 , H01L31/09 , H01L31/101
CPC classification number: H01L31/028 , H01L31/03529 , H01L31/09 , H01L31/101 , Y02E10/547
Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.
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公开(公告)号：US09257610B2
公开(公告)日：2016-02-09
申请号：US14290192
申请日：2014-05-29
Inventor： Doo Hyeb Youn , Young-Jun Yu , Kwang Hyo Chung , Choon Gi Choi
CPC classification number: H01L33/42 , H01L33/32 , H01L33/325 , H01L33/38 , H01L2933/0016
Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.
Abstract translation: 发光二极管包括：基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极，其中第一电极的功函数小于p型半导体层的功函数，但大于第二电极的功函数。
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公开(公告)号：US08981345B2
公开(公告)日：2015-03-17
申请号：US13797703
申请日：2013-03-12
Inventor： Young-Jun Yu , Choon Gi Choi
IPC: H01L29/06 , G01N27/414 , G01N27/12 , B82Y15/00
CPC classification number: G01N27/414 , B82Y15/00 , B82Y40/00 , G01N27/127
Abstract: Provided is a graphene nanoribbon sensor. The sensor includes a substrate, a graphene layer formed on the substrate in a first direction, and an upper dielectric layer on the graphene layer. Here, the graphene layer may have a plurality of electrode regions respectively separated in the first direction and a channel between the plurality of electrode regions.
Abstract translation: 提供了一种石墨烯纳米纤维传感器。 传感器包括基板，在第一方向上形成在基板上的石墨烯层和石墨烯层上的上介电层。 这里，石墨烯层可以具有分别在第一方向上分离的多个电极区域和多个电极区域之间的沟道。
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Patent Agency Ranking
公开(公告)号：US10854445B2
公开(公告)日：2020-12-01
申请号：US16434143
申请日：2019-06-06
Inventor： Bok Ki Min , Choon Gi Choi
IPC: H01L21/02 , H01L21/38 , H01L21/477 , H01L29/16 , C23C14/06 , C23C16/455 , H01L29/06
Abstract: Provided is an infrared optical sensor including a substrate, a channel layer on the substrate, optical absorption structures dispersed and disposed on the channel layer, and electrodes disposed on the substrate, and disposed on both sides of the channel layer, wherein the channel layer and the optical absorption structures include transition metal dichalcogenides.
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公开(公告)号：US09425335B2
公开(公告)日：2016-08-23
申请号：US14297946
申请日：2014-06-06
Inventor： Jin Tae Kim , Young Jun Yu , Hong Kyw Choi , Choon Gi Choi
IPC: H01L31/028 , H01L31/0224
CPC classification number: H01L31/028 , G02B6/12004 , G02B6/1226 , G02B2006/12123 , H01L31/0224 , H01L31/036 , H01L31/09 , Y02E10/547
Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.
Abstract translation: 公开了一种光学检测器。 光检测器包括：第一电介质层; 形成在第一介电层上的石墨烯光传输线; 石墨烯光学检测器，其形成在所述第一介电层上并且被配置为检测沿着所述石墨烯光传输线传输的光; 在石墨烯光学检测器上形成的电线; 金属焊盘位于石墨烯光学检测器的两端并与电线连接; 以及形成在所述石墨烯光传输线上的第二电介质层，其中所述石墨烯光检测器检测相对于所述石墨烯光传输线的表面沿水平方向入射的光的强度。
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公开(公告)号：US09291836B2
公开(公告)日：2016-03-22
申请号：US14184107
申请日：2014-02-19
Inventor： Jin Tae Kim , Kwang Hyo Chung , Young-Jun Yu , Choon Gi Choi
CPC classification number: G02F1/0147 , G02F1/011 , G02F2203/10 , Y10T29/49002
Abstract: Provided are an optical modulator modulating optical signals and an optical module including the same. The optical modulator includes a lower clad layer, an optical transmission line extended in a first direction on the lower clad layer, and an upper clad layer on the optical transmission line and the lower clad layer. The optical transmission line may include graphene.
Abstract translation: 提供了调制光信号的光调制器和包括其的光模块。 光调制器包括下包层，在下包层上沿第一方向延伸的光传输线，以及光传输线和下包层上的上覆层。 光传输线可以包括石墨烯。
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公开(公告)号：US09023166B2
公开(公告)日：2015-05-05
申请号：US13923490
申请日：2013-06-21
Inventor： Jin Sik Choi , Young-Jun Yu , Jin Tae Kim , Kwang Hyo Chung , Doo Hyeb Youn , Choon Gi Choi
CPC classification number: C01B31/0484 , C01B32/194
Abstract: A method of transferring graphene is provided. A method of transferring graphene in accordance with an exemplary embodiment of the present invention may include forming a graphene layer by composing graphene and a base layer, depositing a self-assembled monolayer on the graphene layer, and separating a combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
Abstract translation: 提供了转移石墨烯的方法。 根据本发明的示例性实施方式的转移石墨烯的方法可以包括通过组成石墨烯和基层来形成石墨烯层，在石墨烯层上沉积自组装单层，以及分离包含自组装的组合层 单层和从基层的石墨烯层。
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公开(公告)号：US08890197B2
公开(公告)日：2014-11-18
申请号：US13830148
申请日：2013-03-14
Inventor： Doo Hyeb Youn , Choon Gi Choi , Kwang Hyo Chung
CPC classification number: H01L33/48 , H01L23/373 , H01L24/81 , H01L24/83 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/20 , H01L33/40 , H01L2224/0401 , H01L2224/04026 , H01L2224/05568 , H01L2224/05573 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05649 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/0568 , H01L2224/05684 , H01L2224/06102 , H01L2224/1134 , H01L2224/131 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13149 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13171 , H01L2224/1318 , H01L2224/13184 , H01L2224/16225 , H01L2224/16238 , H01L2224/29023 , H01L2224/29034 , H01L2224/29193 , H01L2224/32238 , H01L2224/73103 , H01L2224/73203 , H01L2224/81191 , H01L2224/81203 , H01L2224/81409 , H01L2224/81411 , H01L2224/81418 , H01L2224/8142 , H01L2224/81447 , H01L2224/81801 , H01L2224/83191 , H01L2224/83203 , H01L2224/83409 , H01L2224/83411 , H01L2224/83418 , H01L2224/8342 , H01L2224/83447 , H01L2224/9211 , H01L2924/12041 , H01L2933/0016 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/01031 , H01L2924/014
Abstract: Provided is a light emitting diode, including a sub-mount structure including a first substrate and electrode portions provided on the first substrate, and a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The electrode portions may include a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and each of the first and second electrode portions may include a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.
Abstract translation: 本发明提供一种发光二极管，其包括具有第一基板和设置在第一基板上的电极部分的子安装结构，以及安装在子安装结构上的发光结构，包括第一半导体层，第二半导体层， 以及在第一半导体层和第二半导体层之间的有源层。 电极部分可以包括分别连接到第一和第二半导体层的第一电极部分和第二电极部分，并且第一和第二电极部分中的每一个可以包括第一金属层，石墨烯层和第二金属层 依次设置在第一基板上。
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