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    Non-volatile memory device and method of fabricating the same
    13.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100155826A1

    公开(公告)日：2010-06-24

    申请号：US12654470

    申请日：2009-12-22

    Applicant: Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    Inventor： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC: H01L27/115 ,  H01L21/8246 ,  H01L21/20

    CPC classification number: H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    Abstract: Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    Abstract translation: 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Method of growing silicon and method of manufacturing solar cell using the same
    14.
    发明申请
    Method of growing silicon and method of manufacturing solar cell using the same 有权
    生长硅的方法及使用其制造太阳能电池的方法

    公开(公告)号：US20100151617A1

    公开(公告)日：2010-06-17

    申请号：US12461502

    申请日：2009-08-13

    Applicant: Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    Inventor： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    IPC: H01L31/18 ,  C01B33/02

    CPC classification number: C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/035 ,  H01L31/182 ,  Y02E10/546 ,  Y02P20/544 ,  Y02P70/521

    Abstract: In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.

    Abstract translation: 在使用反应器生长硅（Si）的方法中，包括硅Si源和氢的超临界流体在反应器中流动，并且Si源与氢反应。 太阳能电池的基底可以由使用生长硅（Si）的方法制成的Si形成。 超临界流体可以是其中Si不被氧化的流体，并且可以是例如具有约60至约200atm压力的CO 2超临界流体。 Si源可以是三氯硅烷（TCS）（SiCl 3 H）或SiH 4。

    Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer
    16.
    发明申请
    Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer 审中-公开
    使用超临界流体的材料层形成装置，包括其的材料层形成系统和形成材料层的方法

    公开(公告)号：US20100092679A1

    公开(公告)日：2010-04-15

    申请号：US12461532

    申请日：2009-08-14

    Applicant: Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    Inventor： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    IPC: B05D3/10 ,  C23C16/00 ,  C23C16/458

    CPC classification number: B01J3/008 ,  C23C18/08 ,  Y02P20/544

    Abstract: Provided are a material layer forming apparatus using a supercritical fluid, a material layer forming system including the apparatus, and a method of forming a material layer using the system. The material layer forming system may include a high pressure pump supplying a supercritical fluid to a precursor storage container and the material layer forming apparatus, and maintaining the internal pressure of the precursor storage container, a reactant material storage container at a pressure such that the supercritical fluid is in a supercritical state, and a material layer forming apparatus. The material layer forming system may further include a pressure gauge adjusting the pressure of the material layer forming apparatus. The precursor of the precursor storage container may be supplied to the material layer forming apparatus using the supercritical fluid.

    Abstract translation: 提供了使用超临界流体的材料层形成装置，包括该装置的材料层形成系统以及使用该系统形成材料层的方法。 材料层形成系统可以包括高压泵，其向前体储存容器和材料层形成设备供应超临界流体，并且保持前体储存容器的内部压力，反应物料储存容器处于使得超临界 流体处于超临界状态，以及材料层形成装置。 材料层形成系统还可以包括调节材料层形成装置的压力的压力计。 可以使用超临界流体将前体储存容器的前体供应到材料层形成装置。

    Phase-change memory device
    17.
    发明授权
    Phase-change memory device 有权
    相变存储器件

    公开(公告)号：US07450415B2

    公开(公告)日：2008-11-11

    申请号：US11640956

    申请日：2006-12-19

    Applicant: Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Beak-hyung Cho ,  Byung-gil Choi

    Inventor： Du-eung Kim ,  Chang-soo Lee ,  Woo-yeong Cho ,  Beak-hyung Cho ,  Byung-gil Choi

    IPC: G11C11/00

    CPC classification number: G11C8/12 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0023 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148

    Abstract: A phase-change memory device is provided. The phase-change memory device includes a phase-change memory cell array including a first memory block having a plurality of phase-change memory cells each connected between each of a plurality of bit lines and a first word line, a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and a row driver including a first and a second pull-up transistor pulling-up each voltage level of the first and the second word lines.

    Abstract translation: 提供了相变存储器件。 相变存储器件包括相变存储器单元阵列，该相变存储单元阵列包括具有连接在多个位线和第一字线中的每一个之间的多个相变存储单元的第一存储器块，具有第 多个相变存储单元，分别连接在多个位线和第二字线之间，第一和第二下拉晶体管下拉第一和第二字线的每个电压电平并共享一个节点;以及 行驱动器，包括第一和第二上拉晶体管，其拉出第一和第二字线的每个电压电平。

    Method for cleaning the developer for a liquid electrophotographic printer
    20.
    发明授权
    Method for cleaning the developer for a liquid electrophotographic printer 失效
    用于清洗液体电子照相打印机的显影剂的方法

    公开(公告)号：US06243553B1

    公开(公告)日：2001-06-05

    申请号：US09466913

    申请日：1999-12-20

    Applicant: Jin-soo Lee ,  Chang-soo Lee ,  Jin-geun Kwak

    Inventor： Jin-soo Lee ,  Chang-soo Lee ,  Jin-geun Kwak

    IPC: G03G1510

    CPC classification number: G03G15/11 ,  G03G15/101 ,  G03G2215/017

    Abstract: A developer cleaning method for a liquid electrophotographic printer is achieved by developing an electrostatic latent image by supplying developer supplied from an injection nozzle to a photoreceptor medium via a development roller, removing drip developer formed on the photoreceptor web between a squeegee roller and the development roller, removing developer remaining between the injection nozzle and the development roller, and reducing an electrical potential of the development roller after development so that toner particles included in the drip developer are transferred to the development roller due to a difference in electrical potential.

    Abstract translation: 液体电子照相打印机的显影剂清洗方法是通过将从注射喷嘴供给的显影剂经由显影辊供给到感光体介质的显影静电潜像来实现的，除去在刮板辊和显影辊之间的感光体网上形成的滴液显影剂 去除在喷嘴和显影辊之间残留的显影剂，并且在显影之后降低显影辊的电位，使包含在滴液显影剂中的调色剂颗粒由于电位差而转移到显影辊。

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