Abstract:
A detection panel and a detection apparatus are provided. The detection panel includes: a cesium iodide scintillator layer, which is not doped with thallium; and a photoelectric detector, which is arranged on a light emission side of the cesium iodide scintillator layer and includes a semiconductor layer; a forbidden band width of a material for forming the semiconductor layer is greater than or equal to 2.3 eV.
Abstract:
A light-emitting diode (LED), a manufacturing method thereof and a light-emitting device are disclosed. The LED includes a cathode, an anode and a functional layer located between the cathode and the anode. The functional layer includes a light-emitting layer and at least one of a hole transporting layer and an electron transporting layer. At least one of the hole transporting layer and the electron transporting layer includes a material having perovskite structure expressed by a general formula of ABX3, wherein A is RNH3 or Cs, R is CnH2n+1, n≥1; X is at least one of Cl, Br and I; B is at least one of Plumbum (Pb), Germanium (Ge), Bismuth (Bi), Stannum (Sn), Cuprum (Cu), Manganese (Mn) and Stibium (Sb).
Abstract:
Embodiments of the present disclosure disclose a display panel, a method of manufacturing the display panel, and a display apparatus. The display panel includes: a first substrate and a second substrate opposite to each other; a liquid crystal layer between the first substrate and the second substrate; and a plurality of pixel electrodes on a side of the first substrate facing towards the liquid crystal layer. Liquid crystal molecules of the liquid crystal layer in a region corresponding to each of the plurality pixel electrodes are in a polymer network state, and the more a distance between the each of the plurality of pixel electrodes and a light source of an edge-lighting type light source module of the display panel is, the more an area occupied by a polymer network in the region corresponding to the each of the plurality of pixel electrodes is.
Abstract:
A quantum dot light-emitting device, a fabricating method thereof, a display substrate and a display apparatus are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
Abstract:
A display substrate is provided, the display substrate comprising at least one pixel unit, the pixel unit including a pixel driving circuit (A2) located in an active driving circuit backplane, and a light-emitting diode chip (A1) disposed on the active driving circuit backplane; the light-emitting diode chip (A1) being electrically connected with the pixel driving circuit (A2). And a manufacturing method of the display substrate, and a display device comprising the display substrate are further provided.
Abstract:
A display substrate is provided, the display substrate comprising at least one pixel unit, the pixel unit including a pixel driving circuit (A2) located in an active driving circuit backplane, and a light-emitting diode chip (A1) disposed on the active driving circuit backplane; the light-emitting diode chip (A1) being electrically connected with the pixel driving circuit (A2). And a manufacturing method of the display substrate, and a display device comprising the display substrate are further provided.
Abstract:
The present invention provides array substrate and manufacturing method thereof and display device. The manufacturing method comprises: forming patterns including active regions of first and second TFTs by patterning process on substrate; forming gate insulation layer on the substrate; forming patterns including gates of the TFTs by patterning process on the substrate; forming isolation layer on the substrate; forming, on the substrate, second contacting vias for connecting sources and drains of the TFTs to respective active regions and first contacting via for connecting gate of the second TFT to source of the first TFT; and on the substrate, forming patterns of corresponding sources and drains on the second contacting vias above active regions of the TFTs, and meanwhile forming connection line for connecting gate of the second TFT to source of the first TFT above the first contacting via above gate of the second TFT.
Abstract:
A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.
Abstract:
The present disclosure provides an ultrasonic transducer unit and a manufacturing method thereof. The ultrasonic transducer unit includes a substrate, a first electrode arranged on the substrate, an insulating layer arranged on the first electrode, a vibrating film arranged on the insulating layer, a closed cavity being between the vibrating film and the insulating layer, and a second electrode arranged on the vibrating film. The vibrating film is made of a photoresist. The ultrasonic transducer unit disclosed by the present disclosure adopts the photoresist as a material of the insulating layer and/or the vibrating film, so that the ultrasonic transducer unit with better performance can be obtained.
Abstract:
A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.