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1.发明申请公开(公告)号：US20200321546A1
公开(公告)日：2020-10-08
申请号：US16305052
申请日：2018-03-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yuedi He , Boris Kristal , Zhuo Chen
Abstract: The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.
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公开(公告)号：US10242604B2
公开(公告)日：2019-03-26
申请号：US15501423
申请日：2016-05-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Changcheng Ju , Yuedi He , Feng Jiang
Abstract: Embodiments of the invention disclose a display device, comprising a substrate, a plurality of pixels on the substrate and a backlight module located at a side of the substrate away from the pixels. Each pixel has a microcavity structure, in which the light emitted from the backlight module oscillates many times and exits as visible light of at least three colors, thereby enabling the display device to realize color display. Compared to the existing liquid crystal display device, this display device will not be limited by the manufacturing process when it is applied in the flexible display field. Compared to the existing organic electroluminescent display device, this display device will not have the problems of low yield, high cost and short life time, etc.
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公开(公告)号：US20210223890A1
公开(公告)日：2021-07-22
申请号：US16755659
申请日：2019-11-18
Inventor： Yuedi He , Guoqiang Tang
Abstract: A touch control display panel is provided. The touch control display panel includes a base substrate; and a black matrix layer on the base substrate and in an inter-subpixel region of the touch control display panel. The black matrix layer includes a non-sensing portion, and a plurality of sensing portions spaced apart from the non-sensing portion. The touch control display panel further includes a first electrode layer including a plurality of first electrode blocks respectively between the plurality of sensing portions and the base substrate; and a second electrode layer including a plurality of second electrode blocks respectively on a side of the plurality of sensing portions away from the first electrode layer. A respective one of the plurality of sensing portions is configured to undergo a restorable change in electrical resistivity in response to a pressure from a touch.
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4.发明申请公开(公告)号：US20180053907A1
公开(公告)日：2018-02-22
申请号：US15539315
申请日：2016-11-30
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yuedi He , Boris Kristal , Yanzhao Li , Jie Sun
CPC classification number: H01L51/502 , H01L21/02601 , H01L51/0067 , H01L51/5028 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/56 , Y10S977/774
Abstract: A quantum dot light-emitting device, a fabricating method thereof, a display substrate and a display apparatus are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.
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公开(公告)号：US11502138B2
公开(公告)日：2022-11-15
申请号：US16907743
申请日：2020-06-22
Inventor： Guoqiang Tang , Yang Wang , Yuedi He
Abstract: An electronic substrate, a manufacturing method thereof and a display panel are provided. The electronic substrate includes a base substrate as well as a photosensitive unit and a touch structure which are provided on the base substrate. The photosensitive unit includes a first electrode layer, and the touch structure includes a first touch electrode layer. The first electrode layer and the first touch electrode layer are in a same first conductive layer and made of a same material, and the first electrode layer and the first touch electrode layer insulated from each other.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11087112B2
公开(公告)日：2021-08-10
申请号：US16698435
申请日：2019-11-27
Inventor： Yuedi He , Guoqiang Tang , Yingsong Xu
Abstract: The present disclosure provides a display panel and a method for fabricating the same, a display device and a fingerprint recognition method and belongs to the field of display technologies. The display panel includes a base substrate, a plurality of pixel units and a plurality of photosensitive units. The photosensitive units and the pixel units are disposed on the same side of the base substrate. Each of the photosensitive units is disposed between adjacent ones of the pixel units.
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公开(公告)号：US10305057B2
公开(公告)日：2019-05-28
申请号：US15529877
申请日：2016-11-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yuedi He , Yanzhao Li , Long Wang , Zhuo Chen
Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof, and a display apparatus containing the light-emitting device. The light-emitting device comprises a quantum dot light-emitting layer, an electron transport layer, and an energy transfer layer. The quantum dot light-emitting layer comprises a quantum dot material. The energy transfer layer is between the quantum dot light-emitting layer and the electron transport layer. The energy transfer layer is configured to facilitate a transfer of energy from the electron transport layer to the quantum dot light-emitting layer such that the quantum dot light-emitting layer has an improved electroluminescence efficiency compared with the quantum dot light-emitting layer having an energy transferred directly from the electron transport layer without the energy transfer layer.
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8.发明申请公开(公告)号：US20180108842A1
公开(公告)日：2018-04-19
申请号：US15540711
申请日：2016-10-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yanzhao Li , Zhuo Chen , Yuedi He , Jie Sun
CPC classification number: H01L51/0018 , G03F7/0007 , G03F7/0047 , G03F7/094 , G03F7/105 , G03F7/162 , G03F7/2002 , G03F7/2022 , G03F7/26 , H01L21/77 , H01L27/12 , H01L27/32 , H01L27/3211 , H01L51/0032 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0077 , H01L51/0079 , H01L51/0092 , H01L51/50 , H01L51/502 , H01L51/52 , H01L51/56
Abstract: A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.
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9.发明申请公开(公告)号：US20210233974A1
公开(公告)日：2021-07-29
申请号：US15733811
申请日：2020-03-09
Inventor： Haijun Qiu , Yuedi He , Guoqiang Tang , Zhenhua Zhang
Abstract: The present disclosure provides an array substrate and a preparation method thereof, a display device and an imaging method thereof. In one embodiment, an array substrate includes: a base substrate; and a plurality of imaging apertures and a plurality of sensor units on the base substrate, wherein the plurality of imaging apertures are respectively on the plurality of sensor units, so that each of the imaging apertures corresponds to each of the sensor units one by one.
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10.发明授权公开(公告)号：US10998519B2
公开(公告)日：2021-05-04
申请号：US16305052
申请日：2018-03-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yuedi He , Boris Kristal , Zhuo Chen
Abstract: The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.
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