公开(公告)号：US12288649B2

公开(公告)日：2025-04-29

申请号：US18028435

申请日：2022-04-18

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yingli Shi ,  Yanzhao Li

IPC: H01H1/00 ,  B81B3/00

Abstract: The disclosure provides a micro-electromechanical system switch and a communication device. The micro-electromechanical system switch includes: a substrate; a DC bias line, arranged on one side of the substrate; a first signal transmission line and a second signal transmission line, arranged on the same side of the substrate as the DC bias line; a cantilever beam, arranged on a side, away from the substrate, of a layer on which the first signal transmission line is located; and a fixing structure, arranged on the side, away from the substrate, of the layer on which the first signal transmission line is located and not in contact with the first signal transmission line, where the fixing structure connects the free end and the substrate.

公开(公告)号：US11894398B2

公开(公告)日：2024-02-06

申请号：US17204057

申请日：2021-03-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiangbo Chen ,  Fanli Meng ,  Fan Li ,  Shuo Zhang ,  Da Li ,  Zeyuan Li ,  Yanzhao Li

IPC: H01L27/144 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1443 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

Abstract: A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.

公开(公告)号：US10224483B2

公开(公告)日：2019-03-05

申请号：US15540711

申请日：2016-10-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yanzhao Li ,  Zhuo Chen ,  Yuedi He ,  Jie Sun

IPC: H01L51/00 ,  G03F7/09 ,  H01L27/32 ,  G03F7/20 ,  G03F7/26 ,  G03F7/16 ,  H01L21/77 ,  H01L27/12 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  G03F7/00 ,  G03F7/004 ,  G03F7/105

Abstract: A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.

公开(公告)号：US10217953B2

公开(公告)日：2019-02-26

申请号：US15539315

申请日：2016-11-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yuedi He ,  Boris Kristal ,  Yanzhao Li ,  Jie Sun

IPC: H01L51/50 ,  H01L21/02 ,  H01L51/56 ,  H01L51/00

Abstract: A quantum dot light-emitting device, a fabricating method thereof, and a display substrate are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.

公开(公告)号：US20180219100A1

公开(公告)日：2018-08-02

申请号：US15529682

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Changcheng Ju ,  Hu Meng ,  Yanzhao Li

IPC: H01L29/786 ,  H01L29/267 ,  H01L29/24 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45

CPC classification number: H01L29/78618 ,  B82Y10/00 ,  G02F1/1368 ,  G02F2202/36 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/0676 ,  H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.

公开(公告)号：US11637262B2

公开(公告)日：2023-04-25

申请号：US17264897

申请日：2020-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenhai Mei ,  Tuo Sun ,  Yanzhao Li

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/56

Abstract: Embodiments of the present disclosure provide an array substrate and a manufacturing method therefor, and a display panel. The array substrate includes: a substrate and a pixel defining layer provided on the substrate, the pixel defining layer including a plurality of opening areas, and the plurality of opening areas being provided with a plurality of quantum dot light-emitting devices in a one-to-one correspondence manner; each of the quantum dot light-emitting devices includes a quantum dot light-emitting layer, and the quantum dot light-emitting layer is made of a quantum dot material. At least one of the pixel defining layer and the quantum dot material is magnetic.

公开(公告)号：US11088296B2

公开(公告)日：2021-08-10

申请号：US16507262

申请日：2019-07-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Long Wang ,  Yanzhao Li ,  Chieh Hsing Chung ,  Jie Sun

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L27/15

Abstract: A light-emitting diode (LED) substrate and a manufacturing method thereof, and a display device are provided. The LED substrate includes a receiving substrate, the receiving substrate is provided thereon with a pixel definition layer and a plurality of LED units, the pixel definition layer defines a plurality of sub-pixel regions, each of the plurality of sub-pixel regions is configured to receive at least one of the plurality of LED units, and a solder point and an auxiliary metal member are both provided in the sub-pixel region, the auxiliary metal member is provided at a periphery of the solder point, an interval is provided between the solder point and the auxiliary metal member in a plan view of the receiving substrate, and a melting point of the auxiliary metal member is higher than a melting point of the solder point.

公开(公告)号：US10608196B2

公开(公告)日：2020-03-31

申请号：US16053419

申请日：2018-08-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhuo Chen ,  Yanzhao Li

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56 ,  C09K11/66 ,  C09K11/07 ,  C09K11/56 ,  C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  H01L27/32

Abstract: The present disclosure discloses a quantum-dot display substrate, a method for preparing the same, and a display panel. The quantum-dot display substrate includes a substrate and a plurality of light emitting sub-pixels disposed on the substrate, in which each of the light emitting sub-pixels includes a quantum-dot light emitting layer, and the quantum-dot light emitting layer includes a crosslinked network formed by crosslinking quantum dots having a crosslinkable ligand with a crosslinking agent.

公开(公告)号：US10395849B2

公开(公告)日：2019-08-27

申请号：US14785772

申请日：2015-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Long Wang ,  Yanzhao Li ,  Yong Qiao ,  Yongchun Lu

IPC: H01G11/26 ,  H01G11/30 ,  H01G11/24 ,  H01M4/139 ,  H01M4/04 ,  H01M4/66 ,  H01G11/86 ,  H01M10/052

Abstract: An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic. The electrode plate prepared by the above method has a high conductivity and a low internal resistance.

公开(公告)号：US10332944B2

公开(公告)日：2019-06-25

申请号：US14771455

申请日：2014-10-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Li Sun ,  Ze Liu ,  Huai-Ting Shih ,  Qijun Zha

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: The present disclosure provides an OLED pixel unit, a method for producing the same, a display panel and a display apparatus. The OLED pixel unit includes an organic light emitting diode configured to emit a light within a wavelength range; and a photonic crystal array located at a light exit side of the organic light emitting diode, structural parameters of the photonic crystal array depending on a preset color of the OLED pixel unit. The light emitted from the OLED has a wavelength which is selected by the photonic crystal array such that the preset color is presented at the light exit side of the OLED. It can achieve high resolution over the conventional means due to the photonic crystal array having a machining size in nanometers. Thus, the resolution of the OLED pixel unit using the photonic crystal array can be improved significantly.