公开(公告)号：US10290741B2

公开(公告)日：2019-05-14

申请号：US15529682

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Changcheng Ju ,  Hu Meng ,  Yanzhao Li

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/04 ,  H01L29/93 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  B82Y10/00 ,  G02F1/1368

Abstract: The present application discloses a thin film transistor including a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region. The second portion and the third portion include a three-dimensional nanocomposite material having a semiconductor material matrix and a plurality of nanopillars in the semiconductor material matrix.

公开(公告)号：US12156415B2

公开(公告)日：2024-11-26

申请号：US17762770

申请日：2021-05-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyuan Zhang ,  Hu Meng

IPC: H01L51/00 ,  H10K50/115 ,  H10K50/16 ,  H10K50/828 ,  H10K59/122 ,  H10K71/00 ,  H10K85/20 ,  H10K85/60 ,  H10K59/12 ,  H10K102/10

Abstract: A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

公开(公告)号：US11844227B2

公开(公告)日：2023-12-12

申请号：US17269500

申请日：2020-06-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

Inventor： Qi Huang ,  Xuelei Liang ,  Hu Meng

IPC: H01L23/00 ,  H10K10/46 ,  H10K85/20

CPC classification number: H10K10/484 ,  H10K85/221

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

公开(公告)号：US11522090B2

公开(公告)日：2022-12-06

申请号：US16976148

申请日：2019-12-16

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Kui Liang ,  Xiaohui Liu ,  Hu Meng ,  Dali Liu ,  Liye Duan ,  Chiachiang Lin

IPC: H01L27/14 ,  H01L31/0216 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/108

Abstract: The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

公开(公告)号：US20250093726A1

公开(公告)日：2025-03-20

申请号：US18577410

申请日：2023-02-16

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jiangbo Chen ,  Zeyuan Li ,  Fanli Meng ,  Ji Peng ,  Hu Meng ,  Liye Duan

IPC: G02F1/167 ,  B41J3/46 ,  B41J29/00 ,  B60R13/04 ,  G02F1/1676 ,  H04N1/00 ,  H04N1/04

Abstract: An electronic printing system includes an imaging apparatus and an electronic paper that can be detached from each other and can be coupled together to perform one or more functionalities. The imaging apparatus includes a first electrode and a first passivation layer. The electronic paper includes a second electrode, an electro-optic layer on the second electrode, and a second passivation layer on a side of the electro-optic layer away from the second electrode. When the imaging apparatus and the electronic paper are coupled together, the first electrode, the first passivation layer, the second passivation layer, the electro-optic layer, and the second electrode are sequentially arranged in a stacked structure, the first electrode and the second electrode being configured to apply an electric field to the electro-optic layer. The first passivation layer and the second passivation layer can be detached from each other.

公开(公告)号：US12224234B2

公开(公告)日：2025-02-11

申请号：US17629358

申请日：2021-03-15

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L23/498 ,  H01L21/02 ,  H01L21/288 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/56

Abstract: A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

公开(公告)号：US20240274785A1

公开(公告)日：2024-08-15

申请号：US18022904

申请日：2022-04-14

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE Technology Group Co., Ltd.

Inventor： Jiangbo Chen ,  Fanli Meng ,  Qiuyun Tan ,  Zeyuan Li ,  Hu Meng ,  Wei Guo ,  Ding Ding

IPC: H01M4/04 ,  H01M4/139 ,  H01M10/058 ,  H01M50/105

CPC classification number: H01M4/0471 ,  H01M4/0404 ,  H01M4/0426 ,  H01M4/139 ,  H01M10/058 ,  H01M50/105

Abstract: Provided are a battery assembly and a manufacturing method thereof. the battery assembly includes: an anode unit, which includes an anode current collector and an anode on the anode current collector, an electrolyte layer on a side of the anode remote from the anode current collector; and a cathode unit on a side of the electrolyte layer remote from the anode; the battery assembly further includes: an interface layer formed at a contact interface between the anode current collector and the anode.

公开(公告)号：US11870011B2

公开(公告)日：2024-01-09

申请号：US16957058

申请日：2019-06-25

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hu Meng

IPC: H01L33/44 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L25/16

CPC classification number: H01L33/44 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L25/167 ,  H01L2933/0025

Abstract: A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.

公开(公告)号：US11081047B2

公开(公告)日：2021-08-03

申请号：US16321968

申请日：2018-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingbo Xu ,  Hu Meng

IPC: G09G3/3225 ,  G09G3/36 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  G09G3/20 ,  H01L27/12

Abstract: Disclosed are a pixel structure, a method for driving a pixel structure, a method for preparing a pixel structure, and a display apparatus. The pixel structure includes a plurality of sub-pixel groups arranged in an array; each of the sub-pixel groups comprises a first sub-pixel electrode, a second sub-pixel electrode a first-type carbon nanotube switch tube and a second-type carbon nanotube switch tube; the first sub-pixel electrode is connected to the first-type carbon nanotube switch tube; the second sub-pixel electrode is connected to the second-type carbon nanotube switch tube; and the first-type carbon nanotube switch tube and the second-type carbon nanotube switch tube in each of the sub-pixel groups are connected to the same gate line and the same data line.

公开(公告)号：US20200328310A1

公开(公告)日：2020-10-15

申请号：US16304126

申请日：2018-03-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  Peking University

Inventor： Hu Meng ,  Xuelei Liang ,  Jiye Xia ,  Qi Huang

IPC: H01L29/786

Abstract: The present disclosure provides a thin film transistor and an array substrate. The thin film transistor includes a source, a drain, and an active layer, and the thin film transistor further includes a blocking layer between the active layer and the source and/or the drain. The present disclosure can reduce the off-state current of the thin film transistor and suppress the bipolar effect.