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公开(公告)号：US20200155717A1
公开(公告)日：2020-05-21
申请号：US16442860
申请日：2019-06-17
Inventor： Guangyao Li , Luke Ding , Leilei Cheng , Yingbin Hu , Jingang Fang , Ning Liu , Qinghe Wang , Dongfang Wang , Liangchen Yan
IPC: A61L2/03 , C01B32/182
Abstract: A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.
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公开(公告)号：US10396186B2
公开(公告)日：2019-08-27
申请号：US15736799
申请日：2017-07-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo Chen , Quanhu Li , Jingang Fang
IPC: H01L29/66 , H01L21/443 , H01L21/4763 , H01L21/423 , H01L29/786 , H01L29/423 , H01L29/49 , H01L21/02 , H01L27/12 , H01L21/768 , H01L29/24 , H01L21/465 , H01L27/32
Abstract: A thin film transistor, a method for fabricating the same, a display panel and a display device are disclosed. The method includes forming an active layer on a substrate; forming an insulating layer on the active layer and an exposed surface of the substrate; forming a first conductive layer on the insulating layer; patterning the first conductive layer and the insulating layer to form a first stack on the active layer, wherein the first stack includes a first portion of the first conductive layer and a first portion of the insulating layer, the first stack acts as a gate stack and the active layer includes a channel region below the gate stack and a source region and a drain region at two sides of the channel region; and performing plasma treatment on the first conductive layer, the source region and the drain region, to improve conductivity.
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13.发明授权公开(公告)号：US10192991B2
公开(公告)日：2019-01-29
申请号：US15571553
申请日：2017-05-05
Applicant: BOE Technology Group Co., Ltd.
Inventor： Wei Liu , Jingang Fang
IPC: H01L29/786 , H01L27/12 , H01L21/02 , H01L21/383 , H01L29/24 , G02F1/1368 , G02F1/167 , G02F1/1335 , H01L29/66 , H01L27/32
Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.
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14.发明授权公开(公告)号：US09978875B2
公开(公告)日：2018-05-22
申请号：US15321056
申请日：2016-03-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lungpao Hsin , Jingang Fang
CPC classification number: H01L29/78618 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78696
Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a TFT includes forming a source electrode and a drain electrode, forming a metal layer on the source and drain electrodes, and forming a metal oxynitride semiconductor layer on the metal layer or on the source and drain electrodes and the metal layer. The metal layer is capable of being oxidized by oxygen ions in the metal oxynitride semiconductor layer.
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公开(公告)号：US12062711B2
公开(公告)日：2024-08-13
申请号：US17449607
申请日：2021-09-30
Inventor： Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC: H01L29/66 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/44 , H01L21/475 , H01L21/4757 , H01L21/4763 , H01L27/12 , H01L29/40 , H01L29/417 , H01L29/786
CPC classification number: H01L29/66969 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L21/44 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1288 , H01L29/401 , H01L29/7869 , H01L29/41733 , H01L29/78633
Abstract: A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.
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Patent Agency Ranking
公开(公告)号：US11961848B2
公开(公告)日：2024-04-16
申请号：US17265789
申请日：2020-05-14
Inventor： Jun Liu , Liangchen Yan , Bin Zhou , Yadong Liang , Ning Liu , Leilei Cheng , Jingang Fang
IPC: H01L27/12 , H01L21/02 , H01L21/4757 , H01L21/4763
CPC classification number: H01L27/1248 , H01L27/124 , H01L27/127 , H01L21/02178 , H01L21/02244 , H01L21/02252 , H01L21/47573 , H01L21/47635 , H01L27/1225
Abstract: Disclosed are a display substrate and a manufacturing method therefor, and a display device. The display substrate comprises: a substrate base, and an active layer, a gate insulating layer, a first metal film layer, an interlayer insulating layer, a second metal film layer, and a passivation layer stacked in sequence on the substrate base. The first metal film layer comprises a pattern of a gate and a gate line. The second metal film layer comprises a pattern of a source/drain and a data line. The gate line and the data line are partially arranged opposite to each other. An oxide metal layer is provided on the surface of the side of the region of the gate line opposite to the data line facing the data line.
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公开(公告)号：US11930679B2
公开(公告)日：2024-03-12
申请号：US17264283
申请日：2020-05-12
Inventor： Jingang Fang , Luke Ding , Jun Liu , Bin Zhou , Jun Cheng
IPC: H10K59/35 , H01L27/12 , H10K50/86 , H10K59/12 , H10K59/121 , H10K59/123 , H10K59/124 , H10K71/00
CPC classification number: H10K59/353 , H10K50/865 , H10K59/1213 , H10K71/00 , H10K59/1201
Abstract: The present disclosure relates to the technical field of display, and discloses an array substrate, a preparation method therefor, and a display device. When dielectric layers, such as a buffer layer, an interlayer dielectric layer, and a gate insulation layer, are formed between a source-drain electrode and a substrate, the thickness of at least one dielectric layer among said dielectric layers underneath a first through hole for connecting a drain electrode and an anode is increased, which is to say that the drain electrode is raised to be further away from the substrate, causing the drain electrode to be closer to a surface of a planarization layer that faces away from the substrate, i.e., reducing the thickness of a portion of the planarization layer above the drain electrode.
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公开(公告)号：US11342459B2
公开(公告)日：2022-05-24
申请号：US16430706
申请日：2019-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Luke Ding , Zhanfeng Cao , Jingang Fang , Liangchen Yan , Ce Zhao , Dongfang Wang
IPC: H01L29/94 , H01L29/786 , H01L29/66 , H01L27/12
Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
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公开(公告)号：US11189646B2
公开(公告)日：2021-11-30
申请号：US16580320
申请日：2019-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Luke Ding , Jingang Fang , Bin Zhou , Ning Liu , Guangyao Li
IPC: H01L27/12 , H01L21/027 , H01L49/02 , H01L29/786
Abstract: A display substrate, a method for manufacturing the same, and a display device are disclosed. The display substrate includes: a base substrate; and a conductive pattern, a first insulating layer and a conductive layer laminated on the base substrate, wherein the first insulating layer has a plurality of first via holes, and the conductive layer includes a signal line, the signal line being electrically connected to the conductive pattern through the plurality of first via holes. The present disclosure may achieve efficient transmission of signals and ensure the display effect of the display device.
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公开(公告)号：US20210327987A1
公开(公告)日：2021-10-21
申请号：US16605782
申请日：2019-05-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingang Fang , Jun Cheng , Ce Zhao , Luke Ding , Ning Liu
Abstract: A display substrate, a method for manufacturing the same, and a display device are provided. The display substrate includes: a base substrate, and a conductive layer and a passivation layer which are stacked on the base substrate. The display substrate has a peripheral region and a capacitor region, the conductive layer is located in the peripheral region, the conductive layer is used for electrically connecting with an external driving circuit in the display device, a thickness of a part of the passivation layer in the capacitor region is less than a thickness of a part of the passivation layer in the peripheral region, and the capacitor region is provided with a capacitor that charges a pixel unit in the display substrate.
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