公开(公告)号：US09685466B2

公开(公告)日：2017-06-20

申请号：US14499210

申请日：2014-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo ,  Seungjin Choi

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/4175 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present invention provides a TFT, an array substrate and a display device. The TFT includes a gate electrode, a source electrode, a drain electrode, and a semiconductor layer. The source electrode and the drain electrode are arranged on different layers. The semiconductor layer is in electrical connection to the source electrode and the drain electrode, respectively; wherein, a region on the semiconductor layer which is corresponding to a region between the source electrode and the drain electrode is a channel region. The present invention also provides an array substrate and a display device comprising the on TFT.

公开(公告)号：US09515028B2

公开(公告)日：2016-12-06

申请号：US14406427

申请日：2014-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo

IPC: H01L23/552 ,  H01L21/77 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L23/552 ,  H01L21/77 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/786 ,  H01L29/78633 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An array substrate and manufacturing method thereof, and a display device are provided. The array substrate comprises a TFT, an isolating layer (M), a pixel electrode (12) and a via (Q) formed through the isolating layer (14). A drain (6) of the TFT is electrically connected with the pixel electrode (12) through the via (Q). A first light blocking layer (14a) is formed on the pixel electrode (12) inside the via (Q). In the array substrate of the present invention, display effect deterioration due to the light reflection on pixel electrode inside the via is avoided by forming the light blocking layer on the pixel electrode inside the via. At the same time, prior to manufacturing the light blocking layer, a barrier layer is formed first to guarantee no residual of light blocking layer will be left on the substrate, thereby improving display performance of the display device.

Abstract translation: 提供阵列基板及其制造方法以及显示装置。 阵列基板包括TFT，隔离层（M），像素电极（12）和通过隔离层（14）形成的通孔（Q）。 TFT的漏极（6）通过通孔（Q）与像素电极（12）电连接。 在通孔（Q）内部的像素电极（12）上形成第一遮光层（14a）。 在本发明的阵列基板中，通过在通孔内部的像素电极上形成遮光层，避免了通孔内的像素电极的光反射引起的显示效果劣化。 同时，在制造遮光层之前，首先形成阻挡层，以确保不会在基板上留下残留的遮光层，从而提高显示装置的显示性能。

公开(公告)号：US20150366053A1

公开(公告)日：2015-12-17

申请号：US14469559

申请日：2014-08-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo ,  Seungjin Choi

IPC: H05K1/02

CPC classification number: G02F1/133 ,  G02F1/1303 ,  H05K1/119 ,  H05K3/361 ,  H05K2201/09045 ,  H05K2203/0278

Abstract: This disclosure provides a circuit substrate, a display panel and a display device for solving the problem of a relatively large electrode pitch of the circuit substrate in the prior art while reducing the production cost. Wherein the circuit substrate comprises a substrate, a plurality of first electrodes arranged on the substrate, and insulating convex structures arranged between the substrate and the first electrodes, the convex structure comprising a top face and a bottom face, wherein the top face contacts with the first electrode, and the bottom face contacts with the substrate.

Abstract translation: 本公开内容提供了一种用于在降低生产成本的同时解决现有技术中电路基板的较大电极间距的问题的电路基板，显示面板和显示装置。 其中，所述电路基板包括基板，布置在所述基板上的多个第一电极以及布置在所述基板和所述第一电极之间的绝缘凸起结构，所述凸起结构包括顶面和底面，其中所述顶面与 第一电极，并且底面与基板接触。

公开(公告)号：US09209231B2

公开(公告)日：2015-12-08

申请号：US14105141

申请日：2013-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Youngsuk Song ,  Seongyeol Yoo ,  Seungjin Choi ,  Heecheol Kim

IPC: H01L29/04 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/322 ,  H01L27/3244 ,  H01L51/5225 ,  H01L51/5265

Abstract: This invention provides an array substrate, a method for fabricating the same, and an OLED display device. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, a second electrode, wherein the first electrode is transparent, and the second electrode is a transflective layer, or the second electrode is transparent and has a transflective layer disposed thereon; a reflection layer disposed between the TFT drive layer and the OLED and forming a microcavity structure with the transflective layer, and a reflective surface of the reflection layer has a concave-convex or corrugated structure disposed thereon for causing diffuse reflection of light; and a color filter film disposed between the reflection layer and the OLED and located in the microcavity structure.

Abstract translation: 本发明提供一种阵列基板及其制造方法以及OLED显示装置。 阵列基板的每个像素单元包括：TFT驱动层; OLED比TFT驱动层更远离OLED驱动的OLED，OLED顺序地包括第一电极，发光层，第二电极，其中第一电极是透明的，第二电极是半透反射层， 或者第二电极是透明的并且具有设置在其上的半透反射层; 反射层，设置在TFT驱动层和OLED之间，并且形成具有透反射层的微腔结构，反射层的反射表面具有设置在其上的凹凸结构或波纹结构，用于引起光的漫反射; 以及设置在反射层和OLED之间并位于微腔结构中的滤色膜。

公开(公告)号：US09165830B1

公开(公告)日：2015-10-20

申请号：US14555790

申请日：2014-11-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Seongyeol Yoo ,  Youngsuk Song ,  Heecheol Kim ,  Seungjin Choi

IPC: H01L33/08 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L21/77 ,  H01L23/3171 ,  H01L23/5226 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/7869 ,  H01L2224/24 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244

Abstract: An array substrate, a method of fabricating the same, and a liquid crystal display device are disclosed. The method comprises: sequentially forming a first transparent conductive material layer, an insulation material layer, a semiconductor material layer and a photoresist layer on a substrate base and forming patterns including a gate line, a gate, a gate insulation layer, a semiconductor layer and a first transparent electrode by patterning process; forming a passivation layer and forming a source via and a drain via connected to the semiconductor layer in the passivation layer; sequentially forming a second transparent conductive material layer and a source-drain metal layer and forming patterns including a source, a drain and a second transparent electrode by patterning process, the gate insulation layer is formed only on the gate and the gate line, the source and the drain include stacked second transparent conductive material layer and source-drain metal layer.

Abstract translation: 公开了阵列基板，其制造方法和液晶显示装置。 该方法包括：在衬底上依次形成第一透明导电材料层，绝缘材料层，半导体材料层和光致抗蚀剂层，并形成包括栅极线，栅极，栅绝缘层，半导体层和 通过图案化工艺的第一透明电极; 形成钝化层，并形成连接到钝化层中的半导体层的源极通孔和漏极通孔; 顺序地形成第二透明导电材料层和源极 - 漏极金属层，并且通过图案化工艺形成包括源极，漏极和第二透明电极的图案，栅极绝缘层仅形成在栅极和栅极线上，源极 并且漏极包括层叠的第二透明导电材料层和源极 - 漏极金属层。

公开(公告)号：US09123586B2

公开(公告)日：2015-09-01

申请号：US13964610

申请日：2013-08-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Seungjin Choi ,  Seongyeol Yoo ,  Youngsuk Song

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/1214 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: Disclosed are an array substrate, a method for fabricating the same and a display device. The array substrate comprises: a substrate, a gate electrode, a gate insulating layer as well as an active layer, and a source/drain metal layer formed on the substrate, the source/drain metal layer is configured for forming a source electrode, a drain electrode and a channel region, wherein a region of the S/D metal layer for forming the channel region is at a lower height than other region of the S/D metal layer for forming the source electrode and the drain electrode.

Abstract translation: 公开了阵列基板，其制造方法和显示装置。 阵列基板包括：基板，栅极电极，栅极绝缘层以及有源层，以及形成在基板上的源极/漏极金属层，源极/漏极金属层被构造成用于形成源极， 漏电极和沟道区，其中用于形成沟道区的S / D金属层的区域处于与用于形成源电极和漏电极的S / D金属层的其它区域相比较低的高度。

公开(公告)号：US20140132485A1

公开(公告)日：2014-05-15

申请号：US14077729

申请日：2013-11-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo ,  Seungjin Choi

IPC: G02B27/01

CPC classification number: G02B27/01 ,  G02B27/0172 ,  G02B2027/0127 ,  G02B2027/0132 ,  G02B2027/0185 ,  G02B2027/0187

Abstract: The present invention provides an open-type head mount display device and a display method thereof. The open-type head mount display device according to the present invention comprises a display unit for generating display images; a focusing lens unit for adjusting the object distance of a display image from a user's eye; an image acquisition unit for acquiring the image of the two eyes of the user; a focal distance analyzing unit for obtaining the focal distance of the user's eye according to the image of the two eyes of the user; and a lens adjusting unit for adjusting the position of the focusing lens unit in the light ray propagation direction of the display image according to a control command from the analyzing unit, so that the object distance of the display image is matched with the current focal distance of the user's eye.

Abstract translation: 本发明提供一种开放型头戴式显示装置及其显示方法。 根据本发明的开放型头戴式显示装置包括：用于产生显示图像的显示单元; 聚焦透镜单元，用于调节显示图像与使用者的眼睛的距离; 图像获取单元，用于获取用户的两只眼睛的图像; 焦距分析单元，用于根据用户的两只眼睛的图像获得用户的眼睛的焦距; 以及透镜调整单元，用于根据来自分析单元的控制命令调整聚焦透镜单元在显示图像的光线传播方向上的位置，使得显示图像的物距与当前焦距 的用户眼睛。

公开(公告)号：US10164217B2

公开(公告)日：2018-12-25

申请号：US14418007

申请日：2014-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Seongyeol Yoo ,  Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song

IPC: H01L51/56 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786 ,  H01L21/77 ,  H01L29/417

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The array substrate comprises a base substrate (1), an organic light-emitting diode (OLED) device and a thin-film transistor (TFT) structure, the OLED device disposed on one side of the base substrate (1); the TFT structure disposed on the other side of the base substrate (1); a through hole formed on the base substrate and provided with a conductive bridge (2); and the OLED device connected with the TFT structure through the conductive bridge (2). The array substrate can avoid electrical interference of the TFT structure on the OLED device, and hence accurate drive for the OLED device can be achieved; as the OLED device can be directly formed on a surface of the base substrate, surface treatment of a pixel electrode is saved with respect to conventional OLED display device, and hence manufacturing process can be accelerated and manufacturing cost can be reduced; and as both an anode and a cathode of the OLED device are made from transparent materials, double-sided light emission can be achieved in the array substrate, and hence double-sided display can be achieved in the array substrate.

公开(公告)号：US09923085B2

公开(公告)日：2018-03-20

申请号：US14785397

申请日：2015-01-30

Applicant: Boe Technology Group Co., Ltd.

Inventor： Seongyeol Yoo ,  Youngsuk Song ,  Heecheol Kim ,  Seungjin Choi

IPC: H01L21/38 ,  H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01L29/24 ,  H01L29/221 ,  H01L21/441 ,  H01L21/82 ,  H01L21/477 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/44 ,  H01L21/477 ,  H01L21/82 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/7869

Abstract: The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film transistor manufacturing process, the base substrate is annealed after the formation of the patterns of the active layer, the source and the drain in the thin film transistor, so as to thermally diffuse ions of the source and the drain at an ohmic contact between the active layer and the source, as well as the drain, to the active layer, and further to provide the active layer with ions of the source and the drain for changing the components of the active layer, which reduces the resistance at the ohmic contact between the active layer and the source, as well as the drain, and guarantees the uniformity and reliability of the thin film transistor. Moreover, annealing treatment is relatively simpler in implementation as compared with the plasma treatment, and will not increase the complexity of the method for manufacturing the entire thin film transistor, which is good for thin film transistor production efficiency.

公开(公告)号：US09893090B2

公开(公告)日：2018-02-13

申请号：US14424717

申请日：2014-05-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo ,  Seungjin Choi

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/1222 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises a gate line and a data line intersecting with each other. The data line and the gate line are formed in a same layer on a substrate, the data line is disconnected in a region of the gate line. A connection pattern is formed in the region of the gate line, the connection pattern is insulated from the gate line, and ends of the data line located on both sides of the gate line are electrically connected by the connection pattern.